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InAs nanowire sensors

We are reinventing a new state-of-the-art Indium Arsenide (InAs) nanowire avalanche photodiode (APD) on silicon substrate.

Using semiconductor devices, network analysers and Fourier transform infrared spectroscopy (FTIR), we will grow an InAs nanowire APD on silicon-on-insulator substrate for a high speed and low-cost coherent optical communication system.

Funding

This project is funded by the Sêr Cymru II Fellowships programme for three years.


The project team

Lead researcher

Shiyu Xie

Dr Shiyu Xie

Research Associate
Advanced Materials and Devices - Sêr Cymru Research Group