Dr Shiyu Xie
Research Associate
Advanced Materials and Devices - Sêr Cymru Research Group
- xies1@cardiff.ac.uk
- +44 (0)29 2087 6467
- Room N/3.13, Queen's Buildings - North Building, 5 The Parade, Newport Road, Cardiff, CF24 3AA
Publications
2023
- Jin, X. et al. 2023. Very low excess noise Al0.75Ga0.25As0.56Sb0.44 avalanche photodiode. Optics Express 31(20), pp. 31670-33764. (10.1364/OE.500169)
2021
- Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
2020
- Yi, X., Xie, S., Liang, B. L., Lim, L., Huffaker, D. L., Tan, C. H. and David, J. P. R. 2020. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Presented at: SPIE Security + Defence, Virtual, UK, 21-25 Sept 2020Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, Vol. 11540. UK: SPIE, (10.1117/12.2573766)
- Xie, S., Li, H., Ahmed, J. and Huffaker, D. L. 2020. 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode. IEEE Photonics Journal 12(4), article number: 6802008. (10.1109/JPHOT.2020.3006957)
- Huang, J. et al. 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8(5), pp. 755-759. (10.1364/PRJ.385177)
2019
- Yi, X. et al. 2019. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics 13, pp. 683-686. (10.1038/s41566-019-0477-4)
2018
- Yi, X. et al. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8, article number: 9107. (10.1038/s41598-018-27507-w)