InAs nanowire sensors
We are reinventing a new state-of-the-art Indium Arsenide (InAs) nanowire avalanche photodiode (APD) on silicon substrate.
Using semiconductor devices, network analysers and Fourier transform infrared spectroscopy (FTIR), we will grow a InAs nanowire APD on silicon-on-insulator substrate for a high speed and low-cost coherent optical communication system.
This project is funded by the Sêr Cymru II Fellowships programme for three years.
Contact
For more information about this project please contact:
Dr Shiyu Xie
Research Associate
Advanced Materials and Devices - Sêr Cymru Research Group
- xies1@cardiff.ac.uk
- +44 (0)29 2087 6467
