Dr Richard Perks

2020

• Ding, L., Wu, Q., Wang, Q., Li, Y., Perks, R. M. and Zhao, L. 2020. Advances on inorganic scintillator-based optic fiber dosimeters. EJNMMI Physics 7(1), article number: 60. (10.1186/s40658-020-00327-6)

2018

• Hirshy, H. et al. 2018. Evaluation of pulsed I-V analysis as validation tool of nonlinear RF models of GaN-based HFETs. IEEE Transactions on Electron Devices 65(12), pp. 5307-5313. (10.1109/TED.2018.2872513)
• Ma, Y. H., Zhu, H. X., Su, B., Hu, G. and Perks, R. 2018. The elasto-plastic behaviour of three-dimensional stochastic fibre networks with cross-linkers. Journal of the Mechanics and Physics of Solids 110, pp. 155-172. (10.1016/j.jmps.2017.09.014)

2017

• Al-Ziayree, A. M. L., Perks, R. M. and Cripps, S. C. 2017. A 25 µm spatial resolution broadband microwave voltage probe. Presented at: 2016 International Conference for Students on Applied Engineering (ICSAE), Newcastle upon Tyne, UK, 20-21 October 2016International Conference for Students on Applied Engineering (ICSAE). IEEE pp. 7-11., (10.1109/ICSAE.2016.7810152)
• Pooth, A. et al. 2017. Morphological and electrical comparison of Ti and Ta based ohmic contacts for AlGaN/GaN-on-SiC HFETs. Microelectronics Reliability 68, pp. 2-4. (10.1016/j.microrel.2016.11.002)

2016

• Al-Ziayree, A. M. L., Cripps, S. C. and Perks, R. M. 2016. A novel microwave non contact current probe with high spatial resolution. Presented at: 2016 IEEE MTT-S International Microwave Symposium (IMS), San Francisco, CA, USA, 22-27 May 20162016 IEEE MTT-S International Microwave Symposium (IMS). IEEE pp. 1-3., (10.1109/MWSYM.2016.7540265)

2014

• Lester, J. F., Evans, L. M., Yousef, Z. R., Penney, A., Brown, P. and Perks, R. 2014. A national audit of current cardiac device policies from radiotherapy centres across the UK. Clinical Oncology 26(1), pp. 45-50. (10.1016/j.clon.2013.09.004)

2010

• Lewis, S., Haynes, V., Wheeler-Jones, R., Sly, J., Perks, R. M. and Piccirillo, L. 2010. Surface characterization of poly(methylmethacrylate) based nanocomposite thin films containing Al2O3 and TiO2 nanoparticles. Thin Solid Films 518(10), pp. 2683-2687. (10.1016/j.tsf.2009.09.005)

2009

• Kettle, J., Perks, R. M. and Hoyle, R. T. 2009. Fabrication of highly transparent self-switching diodes using single layer indium tin oxide. Electronics Letters 45(1), pp. 79-81. (10.1049/el:20092309)

2008

• Kettle, J., Hoyle, R. T., Perks, R. M. and Dimov, S. S. 2008. Overcoming material challenges for replication of 'Motheye Lenses' using Step and Flash Imprint Lithography for optoelectronic applications. Journal of Vacuum Science & Technology B: Nanotechnology and Microelectronics 26(5), pp. 1794-1799. (10.1116/1.2981081)
• Lewis, S., Wheeler-Jones, R., Haynes, V. and Perks, R. M. 2008. High density self assembled nanoparticle film with temperature-controllable interparticle spacing for deep sub-wavelength nanolithography using localized surface plasmon modes on planar silver nanoparticle tunable grating. Microelectronic Engineering 85(2), pp. 486-491. (10.1016/j.mee.2007.09.005)
• Kettle, J., Hoyle, R. T., Dimov, S. S. and Perks, R. M. 2008. Fabrication of complex 3D structures using step and flash imprint lithography (S-FIL). Microelectronic Engineering 85(5-6), pp. 853-855. (10.1016/j.mee.2007.12.003)
• Perks, R. M., Kettle, J., Lalev, G. M. and Dimov, S. S. 2008. Nanostructuring of an AlGaInP light emitting diode for surface plasmon enhanced emission of light output. Physica Status Solidi a Applications and Materials Science 205(8), pp. 2061-2063. (10.1002/pssa.200778898)

2007

• Perks, R. M., Kettle, J., Morgan, D. V. and Porch, A. 2007. Monte Carlo simulation of indium tin oxide current spreading layers in light emitting diodes. Thin Solid Films 515(24), pp. 8660-8663. (10.1016/j.tsf.2007.04.006)
• Butcher, K. S. A. et al. 2007. The nature of nitrogen related point defects in common forms of InN. Journal of Applied Physics 101(12), article number: 123702. (10.1063/1.2736654)
• Kettle, J., Lalev, G., Dimov, S. S. and Perks, R. M. 2007. Fabrication of lenses for AlGaInP LEDs using step and flash imprint lithography. Presented at: Proceedings of the 7th IEEE International Conference on Nanotechnology, Hong Kong. pp. 49-52., (10.1109/NANO.2007.4601138)
• Kettle, J., Perks, R. M., Lalev, G. and Dimov, S. S. 2007. Electroluminescence response of plasmonic AlGaInP light emitting diodes. Presented at: Proceedings of the 7th IEEE International Conference on Nanotechnology, Hong Kong. pp. 678-680., (10.1109/NANO.2007.4601280)

2006

• Perks, R. M., Kettle, J., Morgan, D. V. and Porch, A. 2006. Theoretical and experimental analysis of current spreading in AIGaInP light emitting diodes. Journal of Applied Physics 100(8), article number: 83109. (10.1063/1.2358396)
• Butcher, K. S. A., Hirshy, H., Perks, R. M., Wintrebert-Fouquet, M. and Chen, P. P. 2006. Stoichiometry effects and the Moss-Burstein effect for InN. Physica status solidi (a) 203(1), pp. 66-74. (10.1002/pssa.200563504)
• Alexandrov, D., Dimitrrova, R., Butcher, K. S. A., Perks, R. M. and Wintrebert-Fouquet, M. 2006. Field effect transistor on hetero-structure GaN/InxGa1-xN. Presented at: Canadian Conference on Electrical and Computer Engineering 2006 (CCECE '06), Ottawa, Canada, May 2006Proceedings of the IEEE Canadian Conference on Electrical and Computer Engineering. IEEE pp. 537-540., (10.1109/CCECE.2006.277693)
• Alexandrov, D., Perks, R. M., Butcher, K. S. A., Hirshy, H., Kettle, J. and Wintrebert-Fouquet, M. 2006. Realisation of a Novel GaN/ InN Heterostructure FET Device. Presented at: Lester Eastman Conference on High Performance Devices, New York, USA. pp. 95-96.
• Kettle, J., Perks, R. M. and Dunstan, P. 2006. Localised Joule heating in AIGalnP light emitting diodes. Electronics Letters 42(19), pp. 1122-1123. (10.1049/el:20061488)
• Kettle, J. and Perks, R. M. 2006. Monte Carlo based simulation of surface light emission profiles from AlGalnP light emitting diodes. Electronics Letters 42(9), pp. 553-555. (10.1049/el:20060463)
• Hirshy, H., Perks, R. M., Butcher, K. S. A., Wintrebert-Fouquet, M., Chen, P. and Prince, K. E. 2006. Low carrier concentration indium nitride grown by reactive evaporation. Presented at: 30th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2006), Fiskebäckskil, Sweden. pp. 25-27.
• Perks, R. M., Kettle, J., Porch, A. and Morgan, D. V. 2006. Monte Carlo simulation of indium tin oxide current spreading layers in light emitting diodes. Presented at: 1st International Conference on Transparent Conducting Oxides, Heraklion, Greece.
• Kettle, J., Perks, R. M., Porch, A. and Morgan, D. V. 2006. Experimental and theoretical analysis of current spreading in AIGaInP light emitting diodes. Presented at: Proceedingss of the 30th Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE 2006), Goteborg, Sweden. pp. 133-135.
• Lewis, S., Wheeler-Jones, R., Perks, R. M. and Haynes, V. 2006. Low cost PMMA based photo-masks for 3D grey scale micro-structuring application. Presented at: Technical Proceedings 2006 Nanotechnology Conference & Trade Show, Boston, USA, Vol. 3. pp. 214-217.

2005

• Perks, R. M. and Hirshy, H. 2005. Material inhomogeneity: the source of variation in the observed band gap of Indium Nitride. Presented at: Workshop on Compound Semiconductors Devices and Integrated Circuits (WOCSDICE), Cardiff, UK. pp. 63-64.

2004

• Porch, A., Morgan, D. V., Perks, R. M., Jones, M. O. and Edwards, P. P. 2004. Transparent current spreading layers for optoelectronic devices. Journal of Applied Physics 96(8), pp. 4211-4218. (10.1063/1.1786674)
• Edwards, P. P., Porch, A., Jones, M. O., Morgan, D. V. and Perks, R. M. 2004. Basic materials physics of transparent conducting oxides. Dalton Transactions 2004(19), pp. 2995-3002. (10.1039/b408864f)
• Porch, A., Morgan, D. V., Perks, R. M., Edwards, P. P. and Jones, M. O. 2004. Electromagnetic absorption in transparent conducting films. Journal of Applied Physics 95(9), pp. 4734-4737. (10.1063/1.1689735)
• Morgan, D. V., Porch, A. and Perks, R. M. 2004. Transparent conducting spreading layers for LEDs: current density and mobility limits. Presented at: Proceedings Conference on Semiconductor and Integrated Optics (SIOE), Cardiff, UK.
• Morgan, D. V., Porch, A. and Perks, R. M. 2004. The design and realisation of transparent conducting spreading layers for LEDs. Presented at: Proceedings of European Workshop on Compund Semiconductor Devices (WOCSDICE 04), Bratislava, Slovakia. pp. 25-26.
• Perks, R. M. and Hirshy, H. 2004. Indium Nitride device processing - challenges and opportunities. Presented at: European Materials Research Society Spring Meeting, Strasbourg, France.
• Butcher, K. S. A., Perks, R. M., Wintrebert-Forquet, M. and Chen, P. 2004. Characterisation of indium nitride samples grown by RPE-CVD. Presented at: Proceedings of the European Materials Research Society Spring Meeting, Strasbourg, France.

2001

• Ren, G. B., Summers, H. D., Blood, P., Perks, R. M. and Bour, D. P. 2001. Non-radiative recombination and efficiency of InGaN quantum well light-emitting diodes. Presented at: Physics and Simulation of Optoelectronic Devices IX. Proceedings of SPIE, San Jose, USA, Vol. 4283. pp. 78-84.
• Summers, H. D., Smowton, P., Blood, P., Dineen, M., Perks, R. M., Bour, D. P. and Kneissel, M. 2001. Spatially and spectrally resolved measurement of optical loss in InGaN laser structures. Journal of Crystal Growth 230(3-4), pp. 517-521. (10.1016/S0022-0248(01)01284-2)