Mr Michael Casbon

2022

• Moure, M. R., Casbon, M., Ladero, N., Fernandez‐Barciela, M. and Tasker, P. J. 2022. Evaluation of admittance domain behavioural model complexity requirements for Power Amplifier design. IET Microwaves, Antennas and Propagation 16(12), pp. 780-788. (10.1049/mia2.12285)
• Yang, F. et al. 2022. Study of drain injected breakdown mechanisms in AlGaN/GaN-on-SiC HEMTs. IEEE Transactions on Electron Devices 69(2), pp. 525-530. (10.1109/TED.2021.3138841)

2021

• Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)

2020

• Chen, P. et al. 2020. Optimising linearity of envelope tracking power amplifier using baseband linearisation approach. Presented at: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff, Wales, 16-17 July 20202020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC). IEEE pp. 1-3., (10.1109/INMMiC46721.2020.9160347)
• Chen, P., Alsahali, S., Alt, A., Wang, G., Casbon, M. A., Lees, J. and Tasker, P. J. 2020. Flexible bandwidth reduction technique for envelope tracking using low-pass finite impulse response filters. Electronics Letters 56(12), pp. 586-589. (10.1049/el.2020.0194)
• Quaglia, R. et al. 2020. Source/load-pull characterisation of GaN on Si HEMTs with data analysis targeting Doherty design. Presented at: 2020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR), San Antonio, TX, USA, 26-29 January, 20202020 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR). IEEE pp. 5-8., (10.1109/PAWR46754.2020.9035999)
• Quaglia, R. et al. 2020. Source/load-pull characterisation of GaN on Si HEMTs with data analysis targeting doherty design. Presented at: Radio and Wireless Week 2020, San Antonio, Texas, USA, 26-29 January 2020. pp. -.

2019

• Alt, A. et al. 2019. Analysis of gain variation with changing supply voltages in GaN HEMTs for envelope tracking power amplifiers. IEEE Transactions on Microwave Theory and Techniques 67(7), pp. 2495-2504. (10.1109/TMTT.2019.2916404)
• Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)

2018

• Hirshy, H. et al. 2018. Evaluation of pulsed I-V analysis as validation tool of nonlinear RF models of GaN-based HFETs. IEEE Transactions on Electron Devices 65(12), pp. 5307-5313. (10.1109/TED.2018.2872513)
• Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
• Singh, M. et al. 2018. Pulsed large signal RF performance of field-plated Ga2O3 MOSFETs. IEEE Electron Device Letters 39(10), pp. 1572-1575. (10.1109/LED.2018.2865832)
• Moure, M. R., Casbon, M., Ladero, N., Fernandez-Barciela, M. and Tasker, P. J. 2018. A systematic investigation of admittance domain behavioral model complexity requirements. Presented at: 2018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018), Arequipa, Peru, 12-14 December 20182018 IEEE MTT-S Latin America Microwave Conference (LAMC 2018). Piscataway, NJ: IEEE, (10.1109/LAMC.2018.8699054)
• Casbon, M. A. 2018. Design and application of an advanced fully active harmonic load pull system using pulsed RF measurements and synchronised laser energy. PhD Thesis, Cardiff University.

2017

• Rocio Moure, M., Casbon, M., Fernandez-Barciela, M. and Tasker, P. J. 2017. Direct extraction of an admittance domain behavioral model from large-signal load-pull measurements. Presented at: 2017 IEEE MTT-S International Microwave Symposium (IMS), Honololu, HI, USA, 4-9 June 20172017 IEEE MTT-S International Microwave Symposium (IMS). IEEE pp. 1053-1056., (10.1109/MWSYM.2017.8058775)
• Brazzini, T., Casbon, M. A., Uren, M. J., Tasker, P. J., Jung, H., Blanck, H. and Kuball, M. 2017. Hot-electron electroluminescence under RF operation in GaN-HEMTs: A comparison among operational classes. IEEE Transactions on Electron Devices 64(5), pp. 2155-2160. (10.1109/TED.2017.2686782)
• Fernandez-Barciela, M., Rocio Moure, M., Pelaez-Perez, A., Casbon, M. and Tasker, P. J. 2017. Exploiting behavioral modelling formulations for nonlinear analytical circuit design and improved frequency scalability Bandwidth extension through the admittance domain (Invited Paper). Presented at: 2017 IEEE 18th Wireless and Microwave Technology Conference (WAMICON), Cocoa Beach, FL, USA, 24-25 April 20172017 IEEE 18th Wireless and Microwave Technology Conference (WAMICON). IEEE pp. 1-496., (10.1109/WAMICON.2017.7930279)

2016

• Moure, M. R., Fernandez-Barciela, M., Casbon, M. A. and Tasker, P. J. 2016. Broadband non-linear FET behavioral model defined in the admittance domain. Presented at: 11th European Microwave Integrated Circuits Conference (EuMIC), London, UK, 3-4 October 20162016 11th European Microwave Integrated Circuits Conference (EuMIC 2016). Institute of Electrical and Electronics Engineers (IEEE) pp. 281-284., (10.1109/EuMIC.2016.7777545)
• Casbon, M., Brazzini, T., Tasker, P. J., Uren, M. and Kuball, M. 2016. Simultaneous measurement of optical and RF behavior under CW and pulsed fully active harmonic load-pull. Presented at: ARFTG 87th Conference: Measurements for Emerging Communications Technologies, San Francisco, CA, USA, 27 May 2016.

2015

• Brazzini, T. et al. 2015. Study of hot electrons in AlGaN/GaN HEMTs under RF Class B and Class J operation using electroluminescence. Microelectronics Reliability 55(12), pp. 2493-2498. (10.1016/j.microrel.2015.09.023)
• Brazzini, T. et al. 2015. Electroluminescence of hot electrons in AlGaN/GaN high-electron-mobility transistors under radio frequency operation. Applied Physics Letters 106(21), article number: 213502. (10.1063/1.4921848)

2013

• Casbon, M. A. and Tasker, P. J. 2013. Filter-less diplexer enables active harmonic load-pull at ka band. Presented at: 81st ARFTG Microwave Measurement Conference, Seattle, Washington, USA, 7 June 2013Microwave Measurement Conference (ARFTG), 2013 81st ARFTG. Picastaway: IEEE pp. 1-4., (10.1109/ARFTG.2013.6579028)
• Casbon, M. A., Tasker, P. J., Wang, W., Lin, C., Wang, W. and Wohlmuth, W. 2013. Advanced RF IV waveform engineering tool for use in device technology optimization: RF pulsed fully active harmonic load pull with synchronized 3eV laser. Presented at: IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Monterey, CA, USA, 13-16 October 2013Compound Semiconductor Integrated Circuit Symposium (CSICS), 2013 IEEE. IEEE pp. 1-4., (10.1109/CSICS.2013.6659212)

2011

• Casbon, M. A., Tasker, P. J. and Benedikt, J. 2011. Waveform Engineering beyond the Safe Operating Region: Fully Active Harmonic Load Pull Measurements under Pulsed Conditions. Presented at: 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), Waikoloa, HI, USA, 16-19 October 2011Proceedings of the 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) - INTEGRATED CIRCUITS IN GaAs, InP, SiGe, GaN and Other Compound Semiconductors. Los Alamitos, CA: IEEE, (10.1109/CSICS.2011.6062435)