Yr Athro Diana Huffaker

2023

• Alshahrani, D. et al. 2023. Effect of interfacial schemes on the optical and structural properties of InAs/GaSb type-ii superlattices. ACS Applied Materials and Interfaces 15(6), pp. 8624-8635. (10.1021/acsami.2c19292)

2022

• Kwan, D. C. M. et al. 2022. Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform. Scientific Reports 12(1), article number: 11616. (10.1038/s41598-022-15538-3)
• Santos, A. et al. 2022. Application of advanced (S)TEM methods for the study of nanostructured porous functional surfaces: A few working examples. Materials Characterization 185, article number: 111741. (10.1016/j.matchar.2022.111741)
• Chang, T. et al. 2022. InAsP quantum dot-embedded InP nanowires toward silicon photonic applications. ACS Applied Materials and Interfaces 14(10), pp. 12488–12494. (10.1021/acsami.1c21013)
• Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)

2021

• Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
• Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
• Ahmed, J. et al. 2021. Theoretical analysis of AlAs0.56Sb0.44 single photon avalanche diodes with high breakdown probability. IEEE Journal of Quantum Electronics 57(2), article number: 4500206. (10.1109/JQE.2021.3058356)
• Gong, Y. et al. 2021. Integrated and spectrally selective thermal emitters enabled by layered metamaterials. Nanophotonics 10(4), pp. 1285-1293. (10.1515/nanoph-2020-0578)

2020

• Ji, Y. et al. 2020. Optimization of surface passivation for suppressing leakage current in GaSb PIN devices. Electronics Letters 56(25), pp. 1420-1423. (10.1049/el.2020.2063)
• Yi, X., Xie, S., Liang, B. L., Lim, L., Huffaker, D. L., Tan, C. H. and David, J. P. R. 2020. Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44. Presented at: SPIE Security + Defence, Virtual, UK, 21-25 Sept 2020Proceedings Volume 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, Vol. 11540. UK: SPIE, (10.1117/12.2573766)
• Mazumder, D. et al. 2020. Enhanced optical emission from 2D InSe bent onto Si-pillars. Advanced Optical Materials 8(18), article number: 2000828. (10.1002/adom.202000828)
• Xie, S., Li, H., Ahmed, J. and Huffaker, D. L. 2020. 3D Simple Monte Carlo statistical model for GaAs nanowire single photon avalanche diode. IEEE Photonics Journal 12(4), article number: 6802008. (10.1109/JPHOT.2020.3006957)
• Gong, Y., Wong, S., Bennett, A. J., Huffaker, D. L. and Oh, S. S. 2020. Topological insulator laser using valley-hall photonic crystals. ACS Photonics 7(8), pp. 2089-2097. (10.1021/acsphotonics.0c00521)
• Chang, T., Kim, H., Zutter, B. T., Lee, W., Regan, B. C. and Huffaker, D. L. 2020. Orientation‐controlled selective‐area epitaxy of III–V nanowires on (001) silicon for silicon photonics. Advanced Functional Materials 30(30), article number: 2002220. (10.1002/adfm.202002220)
• Bishop, S., Hadden, J., Alzahrani, F., Hekmati, R., Huffaker, D., Langbein, W. and Bennett, A. 2020. Room-temperature quantum emitter in aluminum nitride. ACS Photonics 7(7), pp. 1636-1641. (10.1021/acsphotonics.0c00528)
• Huang, J. et al. 2020. High-performance mid-wavelength InAs avalanche photodiode using AlAs013Sb087 as the multiplication layer. Photonics Research 8(5), pp. 755-759. (10.1364/PRJ.385177)
• Santos, A. J. et al. 2020. Simultaneous optical and electrical characterization of GaN nanowire arrays by means of Vis-IR spectroscopic ellipsometry. Journal of Physical Chemistry C 124(2), pp. 1535-1543. (10.1021/acs.jpcc.9b10556)
• Bae, S. et al. 2020. Hybrid integrated photomedical devices for wearable vital sign tracking. ACS Sensors 5(6), pp. 1582-1588. (10.1021/acssensors.9b02529)

2019

• Kim, H., Chang, T., Lee, W. and Huffaker, D. L. 2019. III-V nanowire array telecom lasers on (001) silicon-on-insulator photonic platforms. Applied Physics Letters 115(21), article number: 213101. (10.1063/1.5126721)
• Yi, X. et al. 2019. Extremely low excess noise and high sensitivity AlAs0.56Sb0.44 avalanche photodiodes. Nature Photonics 13, pp. 683-686. (10.1038/s41566-019-0477-4)
• Ren, D., Rong, Z., Kim, H., Turan, D. and Huffaker, D. L. 2019. High-efficiency ultrafast optical-to-electrical converters based on inas nanowire-plasmonic arrays. Optics Letters 44(19), pp. 4666-4669.
• Delmas, M., Kwan, D., Debnath, M., Liang, B. and Huffaker, D. 2019. Flexbility of Ga-containing type-II superlattice for long-wavelength infrared detection. Journal of Physics D: Applied Physics 52(47), article number: 475102. (10.1088/1361-6463/ab3b6a)
• Chen, A., Juang, B., Ren, D., Liang, B., Prout, D. L., Chatziioannou, A. F. and Huffaker, D. L. 2019. Significant suppression of surface leakage in GaSb/AlAsSb heterostructure with Al2O3 passivation. Japanese Journal of Applied Physics 58(9), article number: 90907. (10.7567/1347-4065/ab3909)
• Juang, B., Chen, A., Ren, D., Liang, B., Prout, D. L., Chatziioannou, A. F. and Huffaker, D. L. 2019. Energy-sensitive GaSb/AlAsSb separate absorption and multiplication avalanche photodiodes for X-Ray and gamma-ray detection. Advanced Optical Materials 7(11), article number: 1900107. (10.1002/adom.201900107)
• Ren, D. et al. 2019. Room-temperature midwavelength infrared InAsSb nanowire photodetector arrays with Al2O3 passivation. Nano Letters 19(5), pp. 2793-2802. (10.1021/acs.nanolett.8b04420)
• Gómez, V. J., Santos, A. J., Blanco, E., Lacroix, B., Garcia, R., Huffaker, D. L. and Morales, F. M. 2019. Porosity control for plasma-assisted molecular beam epitaxy of GaN nanowires. Crystal Growth and Design 19(4), pp. 2461-2469. (10.1021/acs.cgd.9b00146)
• Liang, B. et al. 2019. Type-II GaSb/InAlAs quantum dots grown on InP (001) substrate by droplet epitaxy (Conference Presentation). Presented at: SPIE OPTO, San Francisco, CA, USA, 2-7 February 2019 Presented at Huffaker, D. L. ed.Proceedings Volume 10929, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XVI. Society of Photo-Optical Instrumentation Engineers (SPIE) pp. 109290H., (10.1117/12.2509207)
• Delmas, M., Liang, B. and Huffaker, D. L. 2019. A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors. Presented at: SPIE OPTO, San Francisco, CA, USA, 2-7 February 2019 Presented at Razeghi, M. ed.Proceedings Volume 10926, Quantum Sensing and Nano Electronics and Photonics XVI. SPIE pp. 109260G., (10.1117/12.2509480)
• Farrell, A. C. et al. 2019. InGaAs-GaAs nanowire avalanche photodiodes toward single-photon detection in free-running mode. Nano Letters 19(1), pp. 582-590. (10.1021/acs.nanolett.8b04643)
• Oh, S. S., Lang, B., Beggs, D. M., Huffaker, D. L., Saba, M. and Hess, O. 2019. Chiral light-matter interaction in dielectric photonic topological insulators. Presented at: CLEO Pacific Rim Conference 2018, Hong Kong, China, 29 Jul - 3 Aug 2018CLEO Pacific Rim Conference 2018, Vol. Th4H. OSA publishing pp. Th4H.5., (10.1364/CLEOPR.2018.Th4H.5)
• Huynh, S. H., Kim, H., Gong, Y., Azizur-Rahman, K., Li, Q. and Huffaker, D. 2019. Catalyst-free selective-area metalorganic chemical vapour deposition of InGaAs/InGaP core-shell nanowire arrays. Presented at: UK Semiconductors 2019 Conference, Sheffield, United Kingdom, 10-11 July 2019.

2018

• Ren, D. et al. 2018. Uncooled photodetector at short-wavelength infrared using InAs nanowire photoabsorbers on InP with p-n heterojunctions. Nano Letters 18(12), pp. 7901-7908. (10.1021/acs.nanolett.8b03775)
• Hudson, A. et al. 2018. Electron and proton radiation effects on band structure and carrier dynamics in MBE and MOCVD grown III-V test structures. Presented at: 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC), Waikoloa Village, HI, USA, 10-15 June 20182018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE pp. 3265., (10.1109/PVSC.2018.8547607)
• Kim, H., Lee, W., Chang, T. and Huffaker, D. L. 2018. Room-temperature InGaAs nanowire array band-edge lasers on patterned silicon-on-insulator platforms. physica status solidi (RRL) - Rapid Research Letters, pp. -., article number: 1800489. (10.1002/pssr.201800489)
• Ren, D., Rong, Z., Azizur-Rahman, K. M., Somasundaram, S., Shahili, M. and Huffaker, D. L. 2018. Feasibility of achieving high detectivity at short- and mid-wavelength infrared using nanowire-plasmonic photodetectors with p-n heterojunctions. Nanotechnology 30, article number: 44002. (10.1088/1361-6528/aaed5c)
• Delmas, M., Liang, B., Debnath, M. and Huffaker, D. 2018. Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors. Infrared Physics and Technology 94, pp. 286-290. (10.1016/j.infrared.2018.09.012)
• Turan, D., Yardimci, N. T., Rong, Z., Ren, D., Kim, H., Huffaker, D. and Jarrahi, M. 2018. High-power terahertz generation from telecommunication-compatible, bias-free photoconductive nano-antennas. Presented at: 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Nagoya, Japan, 9-14 September 20182018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE, (10.1109/IRMMW-THz.2018.8510204)
• Ren, D., Rong, Z., Somasundaram, S., Azizur-Rahman, K. M., Liang, B. and Huffaker, D. L. 2018. A three-dimensional insight into correlation between carrier lifetime and surface recombination velocity for nanowires. Nanotechnology 29(50), article number: 504003. (10.1088/1361-6528/aae365)
• Yi, X. et al. 2018. Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP. Scientific Reports 8, article number: 9107. (10.1038/s41598-018-27507-w)
• Nelson, G. T., Juang, B., Slocum, M., Bittner, Z., Lagumavarapu, R. B., Huffaker, D. and Hubbard, S. 2018. GaSb on GaAs interfacial misfit solar cells. Presented at: IEEE 44th Photovoltaic Specialist Conference (PVSC), Washington DC, USA, 25-30 Jun 2017IEEE 44th Photovoltaic Specialist Conference (PVSC). IEEE Xplore, (10.1109/PVSC.2017.8366539)
• Wang, Y. et al. 2018. Carrier dynamics in hybrid nanostructure with electronic coupling from an InGaAs quantum well to InAs quantum dots. Journal of Luminescence 202, pp. 20-26. (10.1016/j.jlumin.2018.05.029)
• Ren, D. et al. 2018. Exploring time-resolved photoluminescence for nanowires using a three-dimensional computational transient model. Nanoscale 10(16), pp. 7792-7802. (10.1039/C8NR01908H)
• Ren, D., Farrell, A. C. and Huffaker, D. L. 2018. Axial InAs(Sb) inserts in selective-area InAsP nanowires on InP for optoelectronics beyond 25 µm. Optical Materials Express 8(4), pp. 1075-1081. (10.1364/OME.8.001075)
• Schuck, C. F. et al. 2018. Self-assembly of (111)-oriented tensile-strained quantum dots by molecular beam epitaxy. Journal of Vacuum Science and Technology B 36(3), article number: 31803. (10.1116/1.5018002)
• Su, L. et al. 2018. Abnormal photoluminescence for GaAs/Al 0.2 Ga 0.8 As quantum dot - ring hybrid nanostructure grown by droplet epitaxy. Journal of Luminescence 195, pp. 187-192. (10.1016/j.jlumin.2017.11.008)
• Kim, H., Ren, D., Farrell, A. and Huffaker, D. 2018. Catalyst-free selective-area epitaxy of GaAs nanowires by metal-organic chemical vapor deposition using triethylgallium. Nanotechnology 29(8), article number: 85601. (10.1088/1361-6528/aaa52e)
• Gong, Y., Oh, S. S., Huffaker, D. L. and Copner, N. 2018. Novel mid-infrared metamaterial thermal emitters for optical gas sensing. Presented at: Frontiers in Optics / Laser Science, Washington DC, USA, 16-20 September 2018Frontiers in Optics / Laser Science. OSA Technical Digest Optical Society of America pp. JTu3A.89., (10.1364/FIO.2018.JTu3A.89)

2017

• Nelson, G. T., Juang, B., Slocum, M. A., Bittner, Z. S., Laghumavarapu, R. B., Huffaker, D. and Hubbard, S. M. 2017. GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell. Applied Physics Letters 111(23), article number: 231104. (10.1063/1.4991548)
• Juang, B., Liang, B., Ren, D., Prout, D., Chatziioannou, A. and Huffaker, D. 2017. Optical characterization of AlAsSb digital alloy and random alloy on GaSb. Crystals 7(10), article number: 313. (10.3390/cryst7100313)
• Kim, H., Lee, W., Farrell, A. C., Balgarkashi, A. and Huffaker, D. L. 2017. Telecom-wavelength bottom-up nanobeam lasers on silicon-on-insulator. Nano Letters 17(9), pp. 5244-5250. (10.1021/acs.nanolett.7b01360)
• Lee, W., Kim, H., You, J. and Huffaker, D. L. 2017. Ultracompact bottom-up photonic crystal lasers on silicon-on-insulator. Scientific Reports 7(1), article number: 9543. (10.1038/s41598-017-10031-8)
• Ma, Y. J. et al. 2017. Behaviors of beryllium compensation doping in InGaAsP grown by gas source molecular beam epitaxy. Aip Advances 7(7), article number: 75117. (10.1063/1.4989884)
• Kim, H. et al. 2017. Monolithic InGaAs nanowire array lasers on silicon-on-insulator operating at room temperature. Nano Letters 17(6), pp. 3465-3470. (10.1021/acs.nanolett.7b00384)
• Debnath, M. C., Liang, B., Laghumavarapu, R. B., Wang, G., Das, A., Juang, B. and Huffaker, D. 2017. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44 matrix for use in intermediate band solar cells. Journal of Applied Physics 121(21), article number: 214304. (10.1063/1.4984832)
• Ren, D., Farrell, A. C., Williams, B. S. and Huffaker, D. L. 2017. Seeding layer assisted selective-area growth of As-rich InAsP nanowires on InP substrates. Nanoscale 9(24), pp. 8220-8228. (10.1039/C7NR00948H)
• Farrell, A. C., Senanayake, P., Meng, X., Hsieh, N. Y. and Huffaker, D. L. 2017. Diode characteristics approaching bulk limits in GaAs nanowire array photodetectors. Nano Letters 17(4), pp. 2420-2425. (10.1021/acs.nanolett.7b00024)
• Wang, Y. et al. 2017. Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness. Nanoscale Research Letters 12, article number: 229. (10.1186/s11671-017-1998-8)
• Yerino, C. D., Liang, B., Huffaker, D., Simmonds, P. J. and Lee, M. L. 2017. Review article: molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110). Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials Processing Measurement and Phenomena 35(1), article number: 10801. (10.1116/1.4972049)

2016

• Kim, H., Farrell, A. C., Senanayake, P., Lee, W. and Huffaker, D. L. 2016. Correction to Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links. Nano Letters 16(4), pp. 2896-2896. (10.1021/acs.nanolett.6b00913)
• Kim, H., Farrell, A. C., Senanayake, P., Lee, W. and Huffaker, D. L. 2016. Monolithically integrated InGaAs nanowires on 3D structured silicon-on-insulator as a new platform for full optical links. Nano Letters 16(3), pp. 1833-1839. (10.1021/acs.nanolett.5b04883)
• Lee, W., Kim, H., Farrell, A. C., Senanayake, P. and Huffaker, D. L. 2016. Nanopillar array band-edge laser cavities on silicon-on-insulator for monolithic integrated light sources. Applied Physics Letters 108(8), article number: 81108. (10.1063/1.4942777)

2015

• Lee, W., Senanayake, P., Farrell, A. C., Lin, A., Hung, C. and Huffaker, D. L. 2015. High quantum efficiency nanopillar photodiodes overcoming the diffraction limit of light. Nano Letters 16(1), pp. 199-204. (10.1021/acs.nanolett.5b03485)
• Farrell, A. C., Lee, W., Senanayake, P., Haddad, M. A., Prikhodko, S. V. and Huffaker, D. L. 2015. High-quality InAsSb nanowires grown by catalyst-free selective-area metal–organic chemical vapor deposition. Nano Letters 15(10), pp. 6614-6619. (10.1021/acs.nanolett.5b02389)
• Hung, C. H., Senanayake, P., Lee, W., Farrell, A., Hsieh, N. and Huffaker, D. L. 2015. Nanopillar optical antenna nBn detectors for subwavelength infrared pixels. Presented at: SPIE DSS 2015, Baltimore, MD, USA, 22-23 April 2015 Presented at Dhar, N. K. and Dutta, A. K. eds.Proceedings of SPIE - The International Society for Optical Engineering, Vol. 9481. SPIE, (10.1117/12.2177483)

2014

• Scofield, A. C., Lin, A., Haddad, M. and Huffaker, D. L. 2014. Axial diffusion barriers in near-infrared nanopillar LEDs. Nano Letters 14(11), pp. 6037-6041. (10.1021/nl501022v)