Dr Sa Hoang Huynh
Postdoctoral Research Associate, Research
Advanced Materials and Devices - Sêr Cymru Research Group
- Room C/3.07, Adeiladau'r Frenhines-Adeilad Canolog, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA
Sa Hoang Huynh is a Postdoctoral Research Associate in the Advanced Materials and Devices - Ser Cymru Research Group, School of Physics and Astronomy, Cardiff University. His research areas of expertise are III-V compound semiconductor epitaxy in nanoscale using metalorganic vapour chemical deposition (MOCVD), crystalline and band structure characterisation, and novel electronic and optoelectronic devices.
Sa Hoang Huynh received his Ph. D. degree from Department of Materials Science & Engineering, National Chiao Tung University (NCTU), Taiwan, in 2017. He was then a Postdoctoral Research Fellow with the Compound Semiconductor Devices Lab, NCTU. His Ph.D. and postdoc research focuses on the new approaches for epitaxial MOCVD growth of III-V Sb-based nanostructures on GaAs and Si substrates for CMOS applications and the advanced analyses related to the structural, optical, and electrical properties of these novel nanomaterials. In March 2019, he joined the Advanced Materials and Devices - Sêr Cymru Research Group, School of Physics and Astronomy, Cardiff University, the UK as a Postdoctoral Research Associate.
Safleoedd academaidd blaenorol
2019 - present: Postdoctoral Research Associate, Cardiff University, UK
2017 - 2019: Postdoctoral Research Fellow, National Chiao Tung University, Taiwan
2009 - 2012: Lecturer, Ho Chi Minh City University Technology and Education, Vietnam