
Dr David I Westwood
PhD 1990 (Cardiff)
Lecturer
Physics Education Research Group
School of Physics and Astronomy
- westwood@cardiff.ac.uk
- +44 (0)29 2087 4992
- N/2.25b, Queen's Buildings - North Building, 5 The Parade, Newport Road, Cardiff, CF24 3AA
Overview
Course committee
Environmental Management Team
ERASMUS and Study Abroad coordinator.
Examinations panel
Safety Team and Safety Committee (+Chemical Safety Officer and deputy laser safety officer)
Year 0 organiser
Biography
I obtained my first degree in Physics from the University of Nottingham in 1983. My first job was as a research scientist in the Compound Semiconductor Division at GECs Hirst Research Centre, Wembley. In 1985 I moved to Cardiff (then University College Cardiff) joining the group studying semiconductor surfaces and interfaces as a research assistant. Supported by British Telecom I completed my PhD in 1990. My increasing interest and activities in teaching eventually led to a teaching only role in 2013
Publications
2008
- Edwards, G., Smowton, P. M. and Westwood, D. I. 2008. Dry etching of anisotropic microstructures for distributed bragg reflectors in AlGaInP/GaAs laser structures. IEEE Journal of Selected Topics in Quantum Electronics 14(4), pp. 1098-1103. (10.1109/JSTQE.2008.918260)
2007
- Edwards, G.et al. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22(9), pp. 1010-1015. (10.1088/0268-1242/22/9/006)
2006
- Edwards, G. T., Westwood, D. I. and Smowton, P. M. 2006. Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma. Semiconductor Science and Technology 21(4), article number: 513. (10.1088/0268-1242/21/4/017)
2001
- Lu, J.et al. 2001. Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001). Applied Physics Letters 78(8), pp. 1080-1083. (10.1063/1.1350430)
2000
- Haworth, L.et al. 2000. Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100). Applied Surface Science 166(1-4), pp. 418-422. (10.1016/S0169-4332(00)00460-8)
- Haworth, L.et al. 2000. Atomic hydrogen cleaning, nitriding and annealing InSb (100). Applied Surface Science 166(1-4), pp. 253-258. (10.1016/S0169-4332(00)00425-6)
- Westwood, D.et al. 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999 Presented at Moss, S. C. et al. eds.Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. Materials Research Society symposia proceedings Vol. 571. Warrendale, PA: Materials Research Society pp. 337-342.
1999
- Westwood, D. I., Sobiesierski, Z. and Matthai, C. C. 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45, pp. 484-487. (10.1016/S0169-4332(98)00845-9)
- Lu, J.et al. 1999. The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001). Thin Solid Films 343-44, pp. 567-570. (10.1016/S0040-6090(98)01716-7)
- Lu, J.et al. 1999. Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17(4), pp. 1659-1676. (10.1116/1.590806)
1998
- Parbrook, P. J.et al. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73(3), pp. 345-347. (10.1063/1.121829)
- Westwood, D. I.et al. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2358-2366. (10.1116/1.590175)
- Sobiesierski, Z. and Westwood, D. I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318(1-2), pp. 140-147. (10.1016/S0040-6090(97)01153-X)
- Hill, P.et al. 1998. An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen. Applied Surface Science 123-4, pp. 126-124. (10.1016/S0169-4332(97)00539-4)
- Sobiesierski, Z., Westwood, D. I. and Matthai, C. C. 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10(1), pp. 1-43. (10.1088/0953-8984/10/1/005)
- Parbrook, P. J.et al. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24, pp. 313-318. (10.1016/S0169-4332(97)00454-6)
- Westwood, D. I.et al. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24, pp. 347-351. (10.1016/S0169-4332(97)00525-4)
- Haworth, L.et al. 1998. Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2254-2261. (10.1116/1.590158)
1997
- Sobiesierski, Z., Westwood, D. I. and Elliott, M. 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56(23), pp. 15277-15281. (10.1103/PhysRevB.56.15277)
- Ozanyan, K. B.et al. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82(1), pp. 474-476. (10.1063/1.365585)
- Sobiesierski, Z.et al. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70(11), pp. 1423-1425. (10.1063/1.118595)
- Cooper, C.et al. 1997. New approach to blue-shifting asymmetric quantum wells. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared, San Jose, CA, USA, 10-13 February 1997 Presented at Choi, H. K. and Zory, P. S. eds.Proceedings of In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 10-13 February 1997, San Jose, California. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE pp. 184-191., (10.1117/12.273787)
- Hill, P.et al. 1997. Nitridation of the GaAs (001) surface using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15(4), pp. 1133-1139. (10.1116/1.589427)
1996
- Sobiesierski, Z., Westwood, D. I. and Woolf, D. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3065-3069. (10.1116/1.589065)
- Steimetz, E.et al. 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3058-3064. (10.1116/1.589064)
- Levermann, A. H.et al. 1996. An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001). Surface Science 352-54, pp. 812-816. (10.1016/0039-6028(95)01281-8)
- Lees, A. K.et al. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996 Presented at Scheffler, M. and Zimmermann, R. eds.The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996, Vol. 2. Singapore: World Scientific Publishing pp. 955-958.
- Ke, M.et al. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4, pp. 861-864. (10.1016/0039-6028(95)01288-5)
- Ke, M.et al. 1996. Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: ballistic-electron-emission-microscopy measurement and Monte Carlo simulation. Physical Review B 53(8), article number: 4845. (10.1103/PhysRevB.53.4845)
- Ke, M.et al. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14(4), pp. 2786-2789. (10.1116/1.588833)
1995
- Ke, M.et al. 1995. Ballistic electron emission microscopy of strained and relaxed In0.35Ga0.65As/AlAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13(4), pp. 1684. (10.1116/1.587878)
- Ke, M.et al. 1995. Ballistic elecron emission microscopy of InAs/Ga1-xA1xAs relaxed heterostructure interfaces. Materials Science and Engineering: B 35(1-3), pp. 349-352. (10.1016/0921-5107(95)01392-X)
1994
- Williams, J. P.et al. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76(1), pp. 612-614. (10.1063/1.357056)
- Tabata, A.et al. 1994. Strain relaxation studied by photoluminescence and by double crystal X-ray diffraction measurements in strained InGaAs. Materials Science and Engineering: B 22(2-3), pp. 222-226. (10.1016/0921-5107(94)90248-8)
1993
- Sobiesierski, Z.et al. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11(4), pp. 1723-1726. (10.1116/1.586469)
- Tabata, A.et al. 1993. Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures. Applied Surface Science 65-66, pp. 814-820. (10.1016/0169-4332(93)90761-Y)
- Woolf, D. A.et al. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127(1-4), pp. 913-917. (10.1016/0022-0248(93)90759-P)
1992
- Clark, S. A.et al. 1992. Relaxation in InxGa1-xAs/InP for compressive and tensile strain. Journal of Crystal Growth 121(4), pp. 743-750. (10.1016/0022-0248(92)90582-4)
- Woolf, D. A.et al. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71(10), pp. 4908-4915. (10.1063/1.350638)
- Sobiesierski, Z.et al. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81(1), pp. 125-128. (10.1016/0038-1098(92)90585-W)
- Williams, P.et al. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992 Presented at Jiang, P. and Zheng, H. eds.Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing
- Sobiesierski, Z. and Westwood, D. I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12(2), pp. 267-271. (10.1016/0749-6036(92)90350-E)
- Sobiesierski, Z., Woolf, D. A. and Westwood, D. I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12(2), pp. 261-265. (10.1016/0749-6036(92)90349-A)
1991
- Sobiesierski, Z.et al. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58(6), pp. 628-630. (10.1063/1.104550)
1990
- Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5(2), pp. 265-268. (10.1016/0921-5107(90)90066-K)
- Sobiesierski, Z.et al. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5(2), pp. 275-278. (10.1016/0921-5107(90)90068-M)
- Sobiesierski, Z.et al. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7(4), pp. 419-421. (10.1016/0749-6036(90)90237-2)
- Sobiesierski, Z.et al. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990 Presented at Joannopoulos, J. D. and Anastassakis, E. eds.20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. London: World Scientific Publishing pp. 1081-1084.
Teaching
PX2133 - Intermediate Practical Physics I: module organiser
PX2233 - Intermediate Practical Physics II: module organiser
PX2135 - Electronic Instrumentation: module organiser
Year 3 and 4 Project supervisor
Research interests
Although no longer research active, my research background is in molecular beam epitaxy crystal growth of compound semiconductor materials and the study of semiconductor surfaces and interfaces.
The move to teaching has allowed me, through undergraduate projects, to develop an interest in the physics of sport and in particular the interaction between bat and ball.
As for pedagogy, this too is driven by sporting interests. Why, for example, are “trainingâ€; “practice†and “skills development†treated so differently in scientific education and sport?