2008

• Edwards, G., Smowton, P. M. and Westwood, D. I. 2008. Dry etching of anisotropic microstructures for distributed bragg reflectors in AlGaInP/GaAs laser structures. IEEE Journal of Selected Topics in Quantum Electronics 14(4), pp. 1098-1103. (10.1109/JSTQE.2008.918260)

2007

• Edwards, G.et al. 2007. Fabrication of high-aspect-ratio, sub-micron gratings in AlGaInP/GaAs laser structures using a BCl3/Cl-2/Ar inductively coupled plasma. Semiconductor Science and Technology 22(9), pp. 1010-1015. (10.1088/0268-1242/22/9/006)

2006

• Edwards, G. T., Westwood, D. I. and Smowton, P. M. 2006. Selective etching of AlGaInP laser structures in a BCl3/Cl2 inductively coupled plasma. Semiconductor Science and Technology 21(4), article number: 513. (10.1088/0268-1242/21/4/017)

2001

• Lu, J.et al. 2001. Initial stages of molecular-beam epitaxy growth of GaN on 6H-SiC(0001). Applied Physics Letters 78(8), pp. 1080-1083. (10.1063/1.1350430)

2000

• Haworth, L.et al. 2000. Investigation into the influence of buffer and nitrided layers on the initial stages of GaN growth on InSb (100). Applied Surface Science 166(1-4), pp. 418-422. (10.1016/S0169-4332(00)00460-8)
• Haworth, L.et al. 2000. Atomic hydrogen cleaning, nitriding and annealing InSb (100). Applied Surface Science 166(1-4), pp. 253-258. (10.1016/S0169-4332(00)00425-6)
• Westwood, D.et al. 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999 Presented at Moss, S. C. et al. eds.Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. Materials Research Society symposia proceedings Vol. 571. Warrendale, PA: Materials Research Society pp. 337-342.

1999

• Westwood, D. I., Sobiesierski, Z. and Matthai, C. C. 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45, pp. 484-487. (10.1016/S0169-4332(98)00845-9)
• Lu, J.et al. 1999. The (3 × 3) reconstruction and its evolution during the nitridation of GaAs(001). Thin Solid Films 343-44, pp. 567-570. (10.1016/S0040-6090(98)01716-7)
• Lu, J.et al. 1999. Nitridation of the GaAs(001) surface: Thermal behavior of the (3×3) reconstruction and its evolution. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17(4), pp. 1659-1676. (10.1116/1.590806)

1998

• Parbrook, P. J.et al. 1998. Optical monitoring of InP monolayer growth rates. Applied Physics Letters 73(3), pp. 345-347. (10.1063/1.121829)
• Westwood, D. I.et al. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2358-2366. (10.1116/1.590175)
• Sobiesierski, Z. and Westwood, D. I. 1998. Reflectance anisotropy spectroscopy and the growth of low-dimensional materials. Thin Solid Films 318(1-2), pp. 140-147. (10.1016/S0040-6090(97)01153-X)
• Hill, P.et al. 1998. An XPS study of the effect of nitrogen exposure time and temperature on the GaAs(001) surface using atomic nitrogen. Applied Surface Science 123-4, pp. 126-124. (10.1016/S0169-4332(97)00539-4)
• Sobiesierski, Z., Westwood, D. I. and Matthai, C. C. 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10(1), pp. 1-43. (10.1088/0953-8984/10/1/005)
• Parbrook, P. J.et al. 1998. Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy. Applied Surface Science 123-24, pp. 313-318. (10.1016/S0169-4332(97)00454-6)
• Westwood, D. I.et al. 1998. On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films. Applied Surface Science 123-24, pp. 347-351. (10.1016/S0169-4332(97)00525-4)
• Haworth, L.et al. 1998. Formation of an Sb-N compound during nitridation of InSb (001) substrates using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2254-2261. (10.1116/1.590158)

1997

• Sobiesierski, Z., Westwood, D. I. and Elliott, M. 1997. Reflectance anisotropy spectra from Si δ-doped GaAs(001): Correlation of linear electro-optic effect with integrated surface field. Physical Review B: Condensed Matter and Materials Physics 56(23), pp. 15277-15281. (10.1103/PhysRevB.56.15277)
• Ozanyan, K. B.et al. 1997. In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy. Journal of Applied Physics 82(1), pp. 474-476. (10.1063/1.365585)
• Sobiesierski, Z.et al. 1997. As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy. Applied Physics Letters 70(11), pp. 1423-1425. (10.1063/1.118595)
• Cooper, C.et al. 1997. New approach to blue-shifting asymmetric quantum wells. Presented at: In-plane Semiconductor Lasers: From Ultraviolet to Midinfrared, San Jose, CA, USA, 10-13 February 1997 Presented at Choi, H. K. and Zory, P. S. eds.Proceedings of In-Plane Semiconductor Lasers: from Ultraviolet to Midinfrared, 10-13 February 1997, San Jose, California. Proceedings of SPIE Vol. 3001. Bellingham, WA: SPIE pp. 184-191., (10.1117/12.273787)
• Hill, P.et al. 1997. Nitridation of the GaAs (001) surface using atomic nitrogen. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 15(4), pp. 1133-1139. (10.1116/1.589427)

1996

• Sobiesierski, Z., Westwood, D. I. and Woolf, D. 1996. Reflectance anisotropy spectroscopy study of GaAs overlayer growth on submonolayer coverages of Si on the GaAs(001)-c(4x4) surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3065-3069. (10.1116/1.589065)
• Steimetz, E.et al. 1996. Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3058-3064. (10.1116/1.589064)
• Levermann, A. H.et al. 1996. An investigation by spot profile analysis low energy electron diffraction of Si grown on GaAs(001). Surface Science 352-54, pp. 812-816. (10.1016/0039-6028(95)01281-8)
• Lees, A. K.et al. 1996. New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy. Presented at: 23rd International Conference on the Physics of Semiconductors, Berlin, Germany, 21-26 July 1996 Presented at Scheffler, M. and Zimmermann, R. eds.The Physics of Semiconductors: Proceedings of the 23rd International Conference on the Physics of Semiconductors, ICPS, Berlin, 21-26 July 1996, Vol. 2. Singapore: World Scientific Publishing pp. 955-958.
• Ke, M.et al. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4, pp. 861-864. (10.1016/0039-6028(95)01288-5)
• Ke, M.et al. 1996. Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: ballistic-electron-emission-microscopy measurement and Monte Carlo simulation. Physical Review B 53(8), article number: 4845. (10.1103/PhysRevB.53.4845)
• Ke, M.et al. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14(4), pp. 2786-2789. (10.1116/1.588833)

1995

• Ke, M.et al. 1995. Ballistic electron emission microscopy of strained and relaxed In0.35Ga0.65As/AlAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13(4), pp. 1684. (10.1116/1.587878)
• Ke, M.et al. 1995. Ballistic elecron emission microscopy of InAs/Ga1-xA1xAs relaxed heterostructure interfaces. Materials Science and Engineering: B 35(1-3), pp. 349-352. (10.1016/0921-5107(95)01392-X)

1994

• Williams, J. P.et al. 1994. Growth optimization of n‐type GaAs on GaAs(201) substrates. Journal of Applied Physics 76(1), pp. 612-614. (10.1063/1.357056)
• Tabata, A.et al. 1994. Strain relaxation studied by photoluminescence and by double crystal X-ray diffraction measurements in strained InGaAs. Materials Science and Engineering: B 22(2-3), pp. 222-226. (10.1016/0921-5107(94)90248-8)

1993

• Sobiesierski, Z.et al. 1993. Photoluminescence spectroscopy of near‐surface quantum wells: Electronic coupling between quantized energy levels and the sample surface. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 11(4), pp. 1723-1726. (10.1116/1.586469)
• Tabata, A.et al. 1993. Photoluminescence study of the 2D electron gas formed at the interface of strained InGaAs/InP single heterostructures. Applied Surface Science 65-66, pp. 814-820. (10.1016/0169-4332(93)90761-Y)
• Woolf, D. A.et al. 1993. The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies. Journal of Crystal Growth 127(1-4), pp. 913-917. (10.1016/0022-0248(93)90759-P)

1992

• Clark, S. A.et al. 1992. Relaxation in InxGa1-xAs/InP for compressive and tensile strain. Journal of Crystal Growth 121(4), pp. 743-750. (10.1016/0022-0248(92)90582-4)
• Woolf, D. A.et al. 1992. The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies. Journal of Applied Physics 71(10), pp. 4908-4915. (10.1063/1.350638)
• Sobiesierski, Z.et al. 1992. Creation of radiative hydrogen-related states within strained InxGa1-xAs/GaAs quantum wells by hydrogenation. Solid State Communications 81(1), pp. 125-128. (10.1016/0038-1098(92)90585-W)
• Williams, P.et al. 1992. The molecular beam epitaxial growth of GAAS/GAAS(201): doping and growth temperature studies. Presented at: 21st International Conference on the Physics of Semiconductors, Beijing, China, 10-14 August 1992 Presented at Jiang, P. and Zheng, H. eds.Proceedings of the 21st International Conference on the Physics of Semiconductors: Beijing, China, August 10-14, 1992. Singapore: World Scientific Publishing
• Sobiesierski, Z. and Westwood, D. I. 1992. Coupling between near-surface Inx Ga1−x As / GaAs(100) quantum wells and the sample surface. Superlattices and Microstructures 12(2), pp. 267-271. (10.1016/0749-6036(92)90350-E)
• Sobiesierski, Z., Woolf, D. A. and Westwood, D. I. 1992. Incorporation of H into Inx Ga1−x As / GaAs quantum wells: Optical spectroscopy of H-related radiative states. Superlattices and Microstructures 12(2), pp. 261-265. (10.1016/0749-6036(92)90349-A)

1991

• Sobiesierski, Z.et al. 1991. Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy. Applied Physics Letters 58(6), pp. 628-630. (10.1063/1.104550)

1990

• Sobiesierski, Z., Westwood, D. I. and Williams, R. H. 1990. Raman scattering from InxGa1−xAs grown on GaAs(001) by molecular beam epitaxy. Materials Science and Engineering: B 5(2), pp. 265-268. (10.1016/0921-5107(90)90066-K)
• Sobiesierski, Z.et al. 1990. Characterization of GaAs buffer layers 0.1 μm thick grown on Si(100). Materials Science and Engineering: B 5(2), pp. 275-278. (10.1016/0921-5107(90)90068-M)
• Sobiesierski, Z.et al. 1990. Variation of strain in single and multilayer (InxGa1−xAs) structures grown on Si(100), and Si(111), by molecular beam epitaxy. Superlattices and Microstructures 7(4), pp. 419-421. (10.1016/0749-6036(90)90237-2)
• Sobiesierski, Z.et al. 1990. Photoluminescence measurements for GaAS grown on SI(100) and SI(111) by molecular-beam epitaxy. Presented at: 20th International Conference on the Physics of Semiconductors, Thessaloniki, Greece, 6-10 August 1990 Presented at Joannopoulos, J. D. and Anastassakis, E. eds.20th International Conference on the Physics of Semiconductors (ICPS), Thessaloniki, Greece, Aug. 6-10 1990. London: World Scientific Publishing pp. 1081-1084.