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Dr Zbig Sobiesierski MInstP, CPhys

Dr Zbig Sobiesierski

MInstP, CPhys

Director of Continuing and Professional Education

Email:
sobiesierskiz@cardiff.ac.uk
Location:
21-23 Senghennydd Road, Cathays, Cardiff, CF24 4AG

I have extensive experience giving demonstration lectures, workshops, and academic presentations on science communication and consultancy.

I was born and brought up in Swansea, but left my home town to obtain both my degree and doctorate in physics from the University of Exeter.

On returning to Wales in 1986, I carried out research in the School of Physics and Astronomy at Cardiff University leaving, in 1992, to become the first Hitachi Associate Professor in Quantum Materials Electronics at the Research Centre for Interface Quantum Electronics, University of Hokkaido, Sapporo, Japan.

Since returning to the UK, I have held a lectureship in the School of Physics and Astronomy at Cardiff University (1993-1996), studied for an MSc in Communicating Science at Techniquest, and lectured on the BA in Science, Society and Media at the University of the West of England.

I joined the Continuing and Professional Development team in 1999, and have given physics demonstration lectures and workshops on science communication in the UK, Ireland and South Africa.

I remain a firm believer in taking science to ‘where the people are’.

Honours and awards

Institute of Physics Prize for Public Awareness of Physics (2001)

Professional memberships

  • Member of the Institute of Physics (MInstP); Chartered Physicist (CPhys)
  • Practical Leadership for University Management – ILM (2008)
  • Chair, Institute of Physics in Wales (2005-2008), and Acting Chair (2009–2010)
  • Member of the Institute of Physics Nations & Regions Committee (2006–2010)
  • Member of Institute of Physics Public Engagement Grants committee (2001–2012)
  • Adviser for ‘A model for identifying, training, and evaluating non-science centre presenters in science centre outreach.’, a Techniquest/ Science Museum/ Herstmonceux Observatory project aimed at all KS2 audiences (2006-08)
  • Adviser for EPSRC ‘Engineering for Life’ project, Cardiff School of Engineering (2004-2008)
  • Chair of Cardiff Science Festival Steering Group (2005)
  • Member of steering group for Cheltenham Science Festival (2000-2002)
  • External consultant for proposed award in BSc Science & Science Fiction, University of Glamorgan (1999).

Speaking engagements

Highlights include:

  • Institute of Physics Schools and Colleges’ Lecture tour, 1999-2000, (49 presentations, 38 locations across the UK, total audience approx. 8000).
  • Tyndall Lectures on behalf of the Institute of Physics in Ireland, 2001 (8 presentations, 5 locations , total audience approx. 2500).
  • National Festival of Science, Engineering & Technology in South Africa (Sasol SciFest), 2001, 2002, 2005, 2006.
  • Sasol SciFest-on-the Road 2002, a two week tour of KwaZulu-Natal, Free State, Mpumalanga and Limpopo Province in S Africa, sponsored by Sasol and the Institute of Physics (21 presentations, 17 locations, total audience approx. 6500).
  • Invited appearances at Orkney Science Festival (2003), Cheltenham Science Festival (2004), Cardiff Science Festival (2005), and Wrexham Science Festival (2007).
  • Royal Institution Regional Lecturer in the North West (2002–2005).
  • Philip Allan Updates, A Level Physics and GCSE Revision Lectures (2001–2004).
  • Presentations at physics teachers meetings and IOP Physics Update weekends.
  • Writing text to accompany ‘Physics on the Buses’ bookmarks, and ‘If only they’d known that …’ quote text to appear on IOP 125thanniversary posters (1999).

Local science outreach events:

  • Beertricks Potting – science cabaret in pubs and clubs in the Cardiff area.
  • Check Out Science – science busking in supermarket foyers in Cardiff and Bristol.
  • Science Update – a min-conference arranged for University of the 3rd Age science groups from across south Wales.
  • Science in the City: A festival of science in Cardiff – a novel project initiated for National Science Week 2001, that involved Cardiff University working in partnership with: the National Museum of Wales, Techniquest, the Open University in Wales, the South Wales branch of the BA, and University of Wales College of Medicine.
  • Cardiff Science Festival – the success of Science in the City in 2001 and 2002 lead to the staging of the first Cardiff Science Festival in Cardiff’s centenary year, 2005.
  • University Science Days – an aspiration raising initiative aimed at Year 10 pupils from targeted inner city schools that do not traditionally send many pupils on to Higher Education.

Committees and reviewing

  • Chair of Continuing and Professional Education’s Management Board (2012-current)
  • Chair of the Board of Studies (2008-current)
  • Chair of the Centre and Diploma Examination Boards (2012-current)
  • Member of University Senate (2010-current)
  • Member of Academic Standards and Quality Committee (2010-current).

Topics I have spoken on include:

  • seeing is believing?
  • lasers light the way
  • fantastic fluids, the science of slime
  • nanotechnology – the reality of science on a small scale
  • medical imaging and the human body
  • communicating science: from lecture demonstrations to pub cabaret.

Publications

  • Holliman, R., Alderson, K., Barker, S., Forrester, J., and Sobiesierski, Z.  (2001) ‘Developing Computer Mediated Discussions in Distance-Learning Education: Facilitating Online Conferences’, Proc.of 3rd Int. Conf. On Science education Research in the Knowledge Based Society (Thessaloniki), vol. 1, pp. 441-443.
  • Sobiesierski, Z. (2001) ‘Communicating physics on tour’, Physics Education 36, pp. 23-29.
  • Westwood, D.I., Sobiesierski, Z. and Matthai, C.C. (1999) ‘The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects’, Appl. Surf. Sci. 145, pp. 484-490.
  • Sobiesierski, Z. (1999) ‘Selling Science ?’, Wavelength 23, 14-15.
  • Quagliano, L.G., Sobiesierski, Z., Orani, D. and Ricci, A. (1999) ‘Phonon study of temperature evolution of strain in GaAs/Si(001) and GaAs/Si(111) heterostructures’, Physica B267, pp. 775-778.
  • Sobiesierski, Z. (1998) ‘Simulations for solid state physics’, Computers in Physics Education 16, pp. 8-12.
  • Sobiesierski, Z., Westwood, D.I. and Matthai, C.C. (1998) ‘Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces’, J. Phys. Condens. Matt. 10, pp. 1-41.
  • Westwood, D.I., Sobiesierski, Z., Matthai, C.C., Steimetz, E., Zettler, T. and Richter, W. (1998) ‘Processes of quantum dot formation in the InAs on GaAs(001) system: a reflectance anisotropy spectroscopy study’, J. Vac. Sci. Technol. B16, pp. 2358-2366.
  • Parbrook, P.J., Ozanyan, K.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. and Westwood, D.I. (1998) ‘Optical monitoring of InP monolayer growth rates’, Appl. Phys. Lett. 73, pp. 345-347.
  • Westwood, D.I., Sobiesierski, Z, Steimetz, E., Zettler, J.T. and Richter, W. (1998) ‘On the development of InAs on GaAs(001) as measured by reflectance anisotropy spectroscopy: continuous and islanded films’, Appl. Surf. Sci. 123, pp. 347-351.
  • Parbrook, P.J., Ozanyan, B.B., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. and Westwood, D.I. (1998) ‘Surface structure of InP(001) under dynamic and static conditions of molecular beam epitaxy’, Appl. Surf Sci. 123, pp. 313-318.
  • Sobiesierski, Z. and Westwood, D.I. (1998) ‘Reflectance anisotropy spectroscopy and the growth of low-dimensional materials’, Thin Solid Films 318, pp. 140-147.
  • Sobiesierski, Z., Westwood, D.I. and Elliott, M. (1997) ‘Reflectance anisotropy spectra from Si ?-doped GaAs(001): correlation of linear electro-optic effect with integrated surface field’, Phys. Rev. B-Condensed Matter 56, pp. 15277-15281.
  • Ozanyan, K.B., Parbrook, P.J., Hopkinson, M., Whitehouse, C.R., Sobiesierski, Z. and Westwood, D.I. (1997) ‘In-situ monitoring of the surface reconstructions of InP(001) prepared by molecular beam epitaxy’, J. Appl. Phys. 82, pp. 474-476.
  • Sobiesierski, Z., Westwood, D.I., Parbrook, P.J., Ozanyan, K.B., Hopkinson, M. and Whitehouse, C.R. (1997) ‘As/P exchange on InP(001) studied by reflectance anisotropy spectroscopy’, Appl. Phys. Lett. 70, pp. 1423-1425.
  • Zhang, J., Lees, A.K., Taylor, A.G., Xie, M.H., Joyce, B.A., Sobiesierski, Z. and Westwood, D.I. (1996) ‘New hydrogen desorption kinetics from vicinal Si(001) surfaces observed by reflectance anisotropy’, Proc. Of MBE9, Malibu, J. Cryst. Growth.
  • Steimetz, E., Schienle, F., Zettler, J.T., Richter, W., Westwood, D., Sobiesierski, Z., Matthai, C., Junno, B., Miller, M. and Samuelson, L. (1996) ‘In-situ control of InAs quantum dot evolution in MBE, MOVPE and MOMBE’, Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin (World Scientific) pp. 1297-1300.
  • Lees, A.K., Zhang, J., Sobiesierski, Z., Taylor, A.G., Xie, M.H., Joyce, B.A. and Westwood, D.I. (1996) ‘New hydrogen desorption kinetics from vicinal Si(001) surfaces as observed by reflectance anisotropy’, Proc. of 23rd Int. Conf. on the Physics of Semiconductors, Berlin (World Scientific) pp. 955-958.
  • Sobiesierski, Z., Westwood, D.I. and Woolf, D.A. (1996) ‘Reflectance anisotropy spectroscopy study of GaAs overlayer growth on sub-monolayer coverages of Si on the GaAs(001)-c(4×4) surface’, J. Vac. Sci. Technol. B14, pp. 3065-3069.
  • Steimetz, E., Zettler, T., Richter, W., Westwood, D.I., Woolf, D.A. and Sobiesierski, Z. (1996) ‘Optical monitoring of the development of InAs quantum dots on GaAs(001) by reflectance anisotropy spectroscopy’, J. Vac. Sci. Technol. B14, pp. 3058-3064.
  • Sobiesierski, Z. (1995) ‘Application of photoluminescence spectroscopy to semiconductor surfaces and interfaces’ In McGilp, J.F., Weaire, D. and Patterson, C.H. (eds) Epioptics: linear and nonlinear optical spectroscopy of surfaces and interfaces, Berlin, Springer-Verlag, pp. 133-162.
  • Williams, J.P., Westwood, D.I., Sobiesierski, Z. and Aubrey, J.E. (1994) ‘Growth optimisation of n-type GaAs on GaAs(201) substrates’, J. Appl. Phys. 76, pp. 612-614.
  • Sobiesierski, Z. and Clegg, J.B. (1993) ‘Evidence for hydrogen accumulation at strained layer heterojunctions’, Appl. Phys. Lett. 63, pp. 926-928.
  • Sobiesierski, Z., Westwood, D.I., Woolf, D.A., Fukui, T. and Hasegawa, H. (1993) ‘Photoluminescence spectroscopy of near-surface quantum wells: electronic coupling between quantised energy levels and the sample surface’, J. Vac. Sci. Technol. B11, pp. 1723-1726.
  • Woolf, D.A., Williams, J.P., Westwood, D.I., Sobiesierski, Z., Aubrey, J.E. and Williams, R.H. (1993) ‘The homoepitaxial growth of on-axis GaAs(111)A, (111)B and (201) compared with GaAs(100): doping and growth temperature studies’, J. Cryst. Growth 127, pp. 913-917.
  • Quagliano, L.G. and Sobiesierski, Z. (1993) ‘Raman scattering as a probe of the tensile strain distribution in GaAs grown on Si(111) by molecular beam epitaxy’, Superlatt. and Microstruct. 13, pp. 105-108.
  • Williams, J.P., Westwood, D.I., Sobiesierski, Z. and Aubrey, J.E. (1992) ‘The molecular beam epitaxial growth of GaAs/GaAs(201); doping and growth temperature studies’, Proc. of 21st Int. Conf. on the Physics of Semiconductors, Beijing (World Scientific).
  • Sobiesierski, Z. and Westwood, D.I. (1992) ‘Coupling between near-surface InGaAs/GaAs(100) quantum wells and the sample surface’, Superlatt. and Microstruct. 12, pp. 267-271.
  • Sobiesierski, Z., Woolf, D.A. and Westwood, D.I. (1992) ‘Incorporation of H into InGaAs/GaAs(100) quantum wells:optical spectroscopy of H-related radiative states’, Superlatt. and Microstruct. 12, pp. 261-265.
  • Sobiesierski, Z., Woolf, D.A., Frova, A. and Phillips, R.T. (1992) ‘Photoluminescence and photoluminescence excitation spectroscopy of H-related defects in strained InGaAs/GaAs(100) quantum wells’, J. Vac. Sci. Technol. B10, pp. 1975-1979.
  • Capizzi, M., Coluzza, C., Emiliani, V., Frankl, P., Frova, A., Sarto, F., Bonapasta, A.A., Sobiesierski, Z. and Sacks, R.N. (1992) ‘Hydrogen activated radiative states in GaAs/AlGaAs heterostructures and InGaAs/GaAs multiquantum wells’, J. Appl. Phys. 72, pp. 1454-1459.
  • Woolf, D.A., Sobiesierski, Z., Westwood, D.I. and Williams, R.H. (1992) ‘The molecular beam epitaxial growth of GaAs/GaAs(111)B: doping and growth temperature studies’, J. Appl. Phys. 71, pp. 4908-4915.
  • Sobiesierski, Z., Clark, S.A., Williams, R.H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktorovitch, P. (1991) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Proc. of ESPRIT Conf.
  • Sobiesierski, Z., Woolf, D.A., Westwood, D.I., Frova, A. and Coluzza, C. (1992) ‘Creation of radiative hydrogen-related states within strained InGaAs/GaAs quantum wells by hydrogenation’, Sol. Stat. Commun. 81, pp. 125-128.
  • Sobiesierski, Z., Clark, S.A., Williams, R.H. (1992) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Appl. Surf. Sci. 56–58, pp. 703-707.
  • Tabata, A., Benyattou, T., Guillot, G., Sobiesierski, Z., Clark, S.A., Williams, R.H., Gendry, M., Hollinger, G. and Viktorovitch, P. (1991) ‘Surface InAs/InP quantum wells: epitaxial growth and characterisation’, Proc. of 3rd Int. Conf. on InP and Related Materials, Cardiff.
  • Sobiesierski, Z., Clark, S.A., Williams, R.H., Tabata, A., Benyattou, T., Guillot, G., Gendry, M., Hollinger, G. and Viktorovitch, P. (1991) ‘Observation of photoluminescence from InAs surface quantum wells grown on InP(100) by molecular beam epitaxy’, Appl. Phys. Lett. 58, pp. 1863-1865.
  • Sobiesierski, Z., Woolf, D.A., Westwood, D.I. and Williams, R.H. (1991) ‘Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy’, Appl. Phys. Lett. 58, pp. 628-630.
  • Sobiesierski, Z., Woolf, D.A., Westwood, D.I. and Williams, R.H. (1990) ‘Photoluminescence measurements for GaAs grown on Si(100) and Si(111) by molecular beam epitaxy’, Proc. of 20th Int. Conf. on the Physics of Semiconductors, Thessaloniki (World Scientific) pp. 1081-1084.
  • Sobiesierski, Z., Woolf, D.A., Westwood, D.I. and Williams, R.H. (1990) ‘Variation of strain in single and multilayer InGaAs structures grown on Si(100) and Si(111) by molecular beam epitaxy’, Superlatt. and Micostruct. 7, pp. 419-421.
  • Wolverson, D., Sobiesierski, Z. and Phillips. R.T. (1990) ‘The dependence of c.w. photoluminescence on excitation energy in a –P’, J. Phys: Condens. Matt. 2, pp. 6433-6437.
  • Sobiesierski, Z., Dharmadasa, I.M. and Williams, R.H. (1990) ‘Photoluminescence as a probe of semiconductor surfaces: CdTe and CdS’, J. Cryst. Growth 101, pp. 599-602.
  • Sobiesierski, Z., Woolf, D.A., Westwood, D.I. and Williams, R.H. (1990) ‘Characterisation of GaAs buffer layers 0.1 um thick grown on Si(100)’, Mat. Sci. Eng. B5, pp. 275-278.
  • Sobiesierski, Z., Westwood, D.I. and Williams, R.H. (1990) ‘Raman scattering from InGaAs grown on GaAs(001) by molecular beam epitaxy’, Mat. Sci. Eng. B5, pp. 265-268.
  • Sobiesierski, Z., Forsyth, N.M., Dharmadasa, I.M. and Williams, R.H. (1990) ‘Use of x-ray photoelectron spectroscopy to investigate the deposition of metal overlayers onto the clean cleaved CdS surface’, Surf. Sci. 231, pp. 98-102.
  • Williams, R.H., Thornton, J.M.C., Sobiesierski, Z. and Wilks, S.P. (1990) ‘ Passivating layers and interface reactions on semiconductors studied by surface science techniques’, Sol. Stat. Elect. 33, pp. 97-106.
  • Forsyth, N.M., Dharmadasa, I.M., Sobiesierski, Z. and Williams, R.H. (1989) ‘Schottky barriers to CdS and their importance in schottky barrier theories’, Semicond. Sci. Technol. 4, pp. 57-59.
  • Williams, R.H., Forsyth, N., Dharmadasa, I.M. and Sobiesierski, Z. (1989) ‘Metal contacts to II-VI semiconductors: CdS and CdTe’, Appl. Surf. Sci. 41/42, pp. 189-194.
  • Sobiesierski, Z., Dharmadasa, I.M. and Williams, R.H. (1988) ‘Correlation of photoluminescence measurements with the composition and electronic properties of chemically etched CdTe surfaces’, Appl. Phys. Lett. 53, pp. 2623-2625.
  • Forsyth, N.M., Dharmadasa, I.M., Sobiesierski, Z. and Williams, R.H. (1988) ‘An investigation of metal contacts to II-VI compounds: CdTe and CdS’, Vacuum 38, pp. 369-371.
  • Phillips, R.T. and Sobiesierski, Z. (1987) ‘Recombination in amorphous red phosphorus’, J. Phys. C20, pp. 4259-4269.
  • Sobiesierski, Z. and Phillips, R.T. (1987) ‘Time-resolved photoluminescence in amorphous phosphorus’, J. Non-Cryst. Solids 90, pp. 457-460.
  • Phillips, R.T., Sobiesierski, Z., Toner, W.T., Barr, J.R.M. and Langley, A.J. (1987) ‘Initial photoluminescence decay rates in amorphous phosphorus’, Sol. Stat. Commun. 63, pp. 481-483.
  • Sobiesierski, Z. and Phillips, R.T. (1986) ‘A time-resolved study of amorphous phosphorus’, Sol. Stat. Commun. 60, pp. 25-29.

Areas of expertise