Dr Philip Buckle

2018

• McIndo, C.et al. 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964, article number: 12005. (10.1088/1742-6596/964/1/012005)
• McIndo, C. J.et al. 2018. Advances in electron transport in InSb/AlxIn1-xSb quantum wells. Presented at: International Symposium on Quantum Hall Effects and Related Topics (QHE2018), Max Planck Institute for Solid State Research, Stuttgart, Germany, 27-29 June 2018.

2017

• Allford, C. P. and Buckle, P. D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7(6), pp. 772-779. (10.1109/TTHZ.2017.2758266)
• McIndo, C. J.et al. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91, pp. 169-172. (10.1016/j.physe.2017.04.019)
• Hayes, D. G.et al. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32, article number: 85002. (10.1088/1361-6641/aa75c8)
• Smith, G. V.et al. 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17), State College, PA, USA, 31 July - 4 August 2017.

2015

• Sobiesierski, A.et al. 2015. A two-stage surface treatment for the long-term stability of hydrophilic SU-8. Surface and Interface Analysis 47(13), pp. 1174-1179. (10.1002/sia.5870)
• Allford, C. P.et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30(10), article number: 105035. (10.1088/0268-1242/30/10/105035)
• Allford, C. P.et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures. Presented at: UK Semiconductor Conference 2014 (UKSC 2014), Sheffield, UK.
• Allford, C. P., Buckle, P. D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015, Smolenice, Slovakia, 8-10 June 2015.

2012

• Alexander-Webber, J.et al. 2012. High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb. Physical Review B: Condensed Matter and Materials Physics 86(4), article number: 45404. (10.1103/PhysRevB.86.045404)

2011

• Gilbertson, A. M.et al. 2011. Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters 99(24), article number: 242101. (10.1063/1.3668107)
• Gouider, F.et al. 2011. Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells. Presented at: Physics of Semiconductors : 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010Proceedings of the 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Vol. 1399. Melville, NY: American Institute of Physics pp. 1019-1020., (10.1063/1.3666725)
• Gilbertson, A. M.et al. 2011. Suppression of the parasitic buffer layer conductance in InSb/AlxIn1-xSb heterostructures using a wide-band-gap barrier layer. Physical Review B 84(7), article number: 75474. (10.1103/PhysRevB.84.075474)
• Gouider, F.et al. 2011. The detection of terahertz waves by semimetallic and by semiconducting materials. Journal of Applied Physics 109(1), pp. 013106-013111. (10.1063/1.3530727)

2010

• Pooley, O. J.et al. 2010. Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 - xSb heterostructures. Semiconductor Science and Technology 25(12), article number: 125005. (10.1088/0268-1242/25/12/125005)
• Gilbertson, A. M.et al. 2010. Publisher's Note: Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1−xAlxSb asymmetric quantum well heterostructures [Phys. Rev. B 79, 235333 (2009)]. Physical Review B: Condensed Matter and Materials Physics 81(4), article number: 049904(E). (10.1103/PhysRevB.81.049904)
• Pooley, O. J.et al. 2010. Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures. New Journal of Physics 12(5), article number: 53022. (10.1088/1367-2630/12/5/053022)
• Vasilyev, Y. B.et al. 2010. The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells. Semiconductors 44(11), pp. 1511-1514. (10.1134/S1063782610110266)
• Gouider, F.et al. 2010. Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures. Physical Review B 81(15), pp. 155304-155308. (10.1103/PhysRevB.81.155304)

2009

• Orr, J.et al. 2009. Magnetoabsorption in InSb quantum-well heterostructures. Physical Review B 79(23), article number: 235302. (10.1103/PhysRevB.79.235302)
• Gilbertson, A. M.et al. 2009. Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1-xAlxSb asymmetric quantum well heterostructures. Physical Review B 79(23), article number: 235333. (10.1103/PhysRevB.79.235333)
• Nedniyom, B.et al. 2009. Giant enhanced g-factors in an InSb two-dimensional gas. Physical Review B 80(12), article number: 125328. (10.1103/PhysRevB.80.125328)
• Gilbertson, A. M.et al. 2009. High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures. ArXiv e-prints
• Branford, W. R.et al. 2009. Magneto-transport in high mobility n-InSb/InAlSb quantum wells. Presented at: 2009 American Physical Society March Meeting, Pittsburgh, USA, 16-20 March 2009.

2008

• Gilbertson, A. M.et al. 2008. Erratum: Zero-field spin splitting and spin lifetime in n-InSb∕In1−xAlxSb asymmetric quantum well heterostructures [Phys. Rev. B 77, 165335 (2008)]. Physical Review B: Condensed Matter and Materials Physics 78(7), article number: 079901(E). (10.1103/PhysRevB.78.079901)
• Gilbertson, A.et al. 2008. Zero-field spin splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures. Physical Review B: Condensed Matter and Materials Physics 77(16), article number: 165335. (10.1103/PhysRevB.77.165335)
• Orr, J. M. S.et al. 2008. Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B 77(16), article number: 165334. (10.1103/PhysRevB.77.165334)
• Ashwell, G. J.et al. 2008. Functional molecular wires. Physical Chemistry Chemical Physics 10(14), pp. 1859-1866. (10.1039/b719417j)
• Branford, W. R.et al. 2008. Gate dependence of spin-splitting in an InSb/InAlSb quantum well. Presented at: 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007Narrow gap semiconductors 2007: proceedings of the 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Springer Proceedings in Physics Vol. 119. Dordrecht: Springer pp. 3-5., (10.1007/978-1-4020-8425-6_1)
• Eustace, D. A.et al. 2008. (S)TEM Characterisation of InAs/MgO/Co Multilayers. Presented at: Microscopy of semiconducting materials, 15th Conference, Cambridge, UK, 2-5 April 2007Proceedings of the 15th Conference on Microscopy of Semiconducting Materials, Cambridge, UK, 2-5 April 2007. Springer Proceedings in Physics Vol. 120. Dordrecht: Springer Verlag pp. 153-156., (10.1007/978-1-4020-8615-1_32)

2007

• Orr, J. M. S.et al. 2007. One-dimensional conductance in surface gated InSb/AlInSb quantum well heterostructures. Presented at: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006 Presented at Jantsch, W. and Schäffler, F. eds.Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP Conference Proceedings Vol. 893. Melville, NY: American Institute of Physics pp. 729-730., (10.1063/1.2730097)
• Singh, L. J.et al. 2007. Preparation of InAs(0 0 1) surface for spin injection via a chemical route. Journal of Physics D: Applied Physics 40(10), article number: 3190. (10.1088/0022-3727/40/10/024)
• Sherliker, B.et al. 2007. Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range. Semiconductor Science and Technology 22(11), article number: 1240. (10.1088/0268-1242/22/11/010)
• Orr, J. M. S.et al. 2007. A surface-gated InSb quantum well single electron transistor. New Journal of Physics 9(8), article number: 261. (10.1088/1367-2630/9/8/261)
• Luxmoore, I. J.et al. 2007. Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition. Thin Solid Films 515(17), pp. 6791-6797. (10.1016/j.tsf.2007.02.029)
• Ashwell, G. J.et al. 2007. Molecular electronics: connection across nano-sized electrode gaps. Chemical Communications(12), pp. 1254-1256. (10.1039/b615538c)
• Orr, J. M. S.et al. 2007. A surface-gated InSb quantum well single electron transistor. New Journal of Physics 9(8), article number: 261. (10.1088/1367-2630/9/8/261)
• Gilbertson, A.et al. 2007. Low-temperature Schottky barrier tunneling in InSb∕InxAl1−xSb quantum well heterostructures. Physical Review B: Condensed Matter and Materials Physics 76(8), article number: 85306. (10.1103/PhysRevB.76.085306)
• Magnus, F.et al. 2007. Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers. Applied Physics Letters 91(12), article number: 122106. (10.1063/1.2784933)

2006

• Orr, J. M. S.et al. 2006. Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures. Semiconductor Science and Technology 21(10), pp. 1408-1411. (10.1088/0268-1242/21/10/006)
• Ross, I. M.et al. 2006. Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition. Journal of Physics. Conference Series 26(1), pp. 363-366. (10.1088/1742-6596/26/1/088)
• Sherliker, B.et al. 2006. Effects of depletion on the emission from individual InGaN dots. Applied Physics Letters 88(12), article number: 122115. (10.1063/1.2186973)
• Orr, J. M. S.et al. 2006. Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors. Journal of Applied Physics 99(8), article number: 83703. (10.1063/1.2190075)

2005

• Nash, G. R.et al. 2005. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching. Semiconductor Science and Technology 20(2), pp. 144-148. (10.1088/0268-1242/20/2/007)
• Gardelis, S.et al. 2005. Possible use of the half-Hausler alloy NiMnSb in spintronics: synthesis and physical properties of arc melted NiMnSb and of NiMnSb thin films grown on InSb by pulsed laser deposition. Journal of Physics: Conference Series 10, pp. 167-170. (10.1088/1742-6596/10/1/041)
• Sherliker, B.et al. 2005. Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors. Acta Physica Polonica Series A 107(1), pp. 174-178.

2004

• Gardelis, S.et al. 2004. Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition. Applied Physics Letters 85(15), article number: 3178. (10.1063/1.1807026)
• Androulakis, J.et al. 2004. Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition. Applied Physics A: Materials Science and Processing 79(4-6), pp. 1211-1213. (10.1007/s00339-004-2720-0)

2002

• Ashmore, A. D.et al. 2002. Optical properties of single charge tuneable InGaAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures 13(2-4), pp. 127-130. (10.1016/S1386-9477(01)00502-1)
• Nash, G. R.et al. 2002. Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation. Semiconductor Science and Technology 17(10), pp. 1111-1114. (10.1088/0268-1242/17/10/314)

2001

• Finley, J.et al. 2001. Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. Physical Review B Condensed Matter and Materials Physics 63(16), article number: 161305. (10.1103/PhysRevB.63.161305)

2000

• Buckle, P. D.et al. 2000. An inter-subband device with terahertz applications. IEEE Transactions on Microwave Theory and Techniques 48(4), pp. 632-638. (10.1109/22.841953)
• Bridge, C. J.et al. 2000. Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures. Semiconductor Science and Technology 15(10), pp. 975-979. (10.1088/0268-1242/15/10/308)
• Bridge, C. J.et al. 2000. Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells. Journal of Applied Physics 88(11), pp. 6451-6456. (10.1063/1.1324683)

1999

• Buckle, P. D.et al. 1999. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. Journal of Applied Physics 86(5), pp. 2555-2561. (10.1063/1.371092)

1998

• Buckle, P. D.et al. 1998. Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures. Journal of Applied Physics 83(2), pp. 882-887. (10.1063/1.366772)
• Kuo, C.et al. 1998. An electrical and optical study of electrons in triple barrier structures. Physica E: Low-dimensional Systems and Nanostructures 2(1-4), pp. 815-819. (10.1016/S1386-9477(98)00166-0)

1997

• Buckle, P. D.et al. 1997. Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy. Journal of Crystal Growth 175-76(2), pp. 1299-1302. (10.1016/S0022-0248(96)01038-X)

1996

• Main, P. C. and Buckle, P. D. 1996. Tunnel structures as probes of new physics [and discussion]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 354(1717), pp. 2311-2325. (10.1098/rsta.1996.0102)
• Buckle, P. D. and Dawson, P. 1996. High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures. Surface Science 361-2, pp. 431-434. (10.1016/0039-6028(96)00438-4)
• Buckle, P. D.et al. 1996. Magnetic-field-induced modulation of intersubband scattering in a double-barrier resonant-tunneling structure. Physical Review B Condensed Matter and Materials Physics 53(20), pp. 13651-13655. (10.1103/PhysRevB.53.13651)
• Cockburn, J. W.et al. 1996. Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure. Journal of Applied Physics 79(11), pp. 8844-8846. (10.1063/1.362511)

1994

• Buckle, P. D.et al. 1994. Control of excited electron state populations in double-barrier resonant tunnelling structures. Semiconductor Science and Technology 9(5S), pp. 533-536. (10.1088/0268-1242/9/5S/036)
• Cockburn, J. W.et al. 1994. Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure. Applied Physics Letters 64(18), pp. 2400-2402. (10.1063/1.111627)
• Teissier, R.et al. 1994. Observation of ballistic transport in double-barrier resonant-tunneling structures by electroluminescence spectroscopy. Physical Review B Condensed Matter and Materials Physics 50(7), pp. 4885-4888. (10.1103/PhysRevB.50.4885)
• Turner, T. S.et al. 1994. Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells. Solid-State Electronics 37(4-6), pp. 721-724. (10.1016/0038-1101(94)90285-2)
• Harrison, P. A.et al. 1994. Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices. Surface Science 305(1-3), pp. 353-357. (10.1016/0039-6028(94)90915-6)
• Fisher, T. A.et al. 1994. Use of a narrow-gap prewell for the optical study of charge buildup and the Fermi-energy edge singularity in a double-barrier resonant-tunneling structure. Physical Review B Condensed Matter and Materials Physics 50(24), pp. 18469-18478. (10.1103/PhysRevB.50.18469)
• Cockburn, J. W.et al. 1994. Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures. Surface Science 305(1-3), pp. 375-379. (10.1016/0039-6028(94)90919-9)
• Tagg, W. I. E.et al. 1994. Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure. Semiconductor Science and Technology 9(9), pp. 1608-1615. (10.1088/0268-1242/9/9/007)
• Teissier, R.et al. 1994. Magneto-optical studies of ballistic electron transport in single barrier heterostructures. Superlattices and Microstructures 15(4), pp. 373-376. (10.1006/spmi.1994.1072)

1992

• Cockburn, J. W.et al. 1992. Electroluminescence recombination from excited-state carrier populations in double-barrier resonant-tunneling structures. Physical Review B Condensed Matter and Materials Physics 45(23), pp. 13757-13760. (10.1103/PhysRevB.45.13757)
• Cockburn, J. W.et al. 1992. Investigation of electroluminescence from excited state carrier populations in double barrier resonant tunnelling structures. Superlattices and Microstructures 12(3), pp. 413-417. (10.1016/0749-6036(92)90293-E)