Dr Philip Buckle

Reader
Condensed Matter and Photonics Group

: bucklepd@cardiff.ac.uk
: +44 (0)29 2087 0156

I completed my BSc and PhD at the University of Sheffield right at the start of the 1990's before moving for four years to the University of Manchester Institute of Science and Technology (UMIST) as a post doctoral research assistant. I worked on different aspects of the physics of semiconductor tunnelling structures at both of these institutes, predominantly as an optical spectroscopist.

In 1998 I moved to the Novel Devices team at RSRE/DERA Malvern, working on InSb narrow bandgap devices, where I remained until 2011 gaining Fellow status in the newly formed privatised 'QinetiQ' and became a visiting Professor at Manchester University.

I was the IOP semiconductor group secretary for 5 years (2001 - 2006) and have sat on numerous industrial advisory committees and boards whilst working in Malvern.

I moved to Cardiff University in 2011 to take up the challenge of expanding the reputation that Cardiff already has for high quality semiconductor physics.

Honours and awards

Former QinetiQ Fellow and Visiting Professor at Manchester University, Institute of Photonics

PhD examiner, Universities of Manchester, Sheffield, Surrey, and Royal Holloway.

IOP semiconductor group secretary for 5 years (2001 - 2006)

EPSRC college member since 1999

2012

Alexander-Webber, J.et al. 2012. High-current breakdown of the quantum Hall effect and electron heating in InSb/AlInSb. Physical Review B: Condensed Matter and Materials Physics 86(4), article number: 45404. (10.1103/PhysRevB.86.045404)

2011

Gilbertson, A. M.et al. 2011. Room temperature ballistic transport in InSb quantum well nanodevices. Applied Physics Letters 99(24), article number: 242101. (10.1063/1.3668107)
Gouider, F.et al. 2011. Detection of THz radiation with devices made from wafers with HgTe and InSb quantum wells. Presented at: Physics of Semiconductors : 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010Proceedings of the 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010, Vol. 1399. Melville, NY: American Institute of Physics pp. 1019-1020., (10.1063/1.3666725)
Gilbertson, A. M.et al. 2011. Suppression of the parasitic buffer layer conductance in InSb/AlxIn1-xSb heterostructures using a wide-band-gap barrier layer. Physical Review B 84(7), article number: 75474. (10.1103/PhysRevB.84.075474)
Gouider, F.et al. 2011. The detection of terahertz waves by semimetallic and by semiconducting materials. Journal of Applied Physics 109(1), pp. 013106-013111. (10.1063/1.3530727)

2010

Pooley, O. J.et al. 2010. Quantum well mobility and the effect of gate dielectrics in remote doped InSb/AlxIn1 - xSb heterostructures. Semiconductor Science and Technology 25(12), article number: 125005. (10.1088/0268-1242/25/12/125005)
Gilbertson, A. M.et al. 2010. Publisher's Note: Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1−xAlxSb asymmetric quantum well heterostructures [Phys. Rev. B 79, 235333 (2009)]. Physical Review B: Condensed Matter and Materials Physics 81(4), article number: 049904(E). (10.1103/PhysRevB.81.049904)
Pooley, O. J.et al. 2010. Transport effects in remote-doped InSb/AlxIn1-xSb heterostructures. New Journal of Physics 12(5), article number: 53022. (10.1088/1367-2630/12/5/053022)
Vasilyev, Y. B.et al. 2010. The cyclotron resonance in Heterostructures with the InSb/AlInSb quantum wells. Semiconductors 44(11), pp. 1511-1514. (10.1134/S1063782610110266)
Gouider, F.et al. 2010. Terahertz photoresponse of AlInSb/InSb/AlInSb quantum well structures. Physical Review B 81(15), pp. 155304-155308. (10.1103/PhysRevB.81.155304)

2009

Orr, J.et al. 2009. Magnetoabsorption in InSb quantum-well heterostructures. Physical Review B 79(23), article number: 235302. (10.1103/PhysRevB.79.235302)
Gilbertson, A. M.et al. 2009. Zero-field spin splitting and spin-dependent broadening in high-mobility InSb/In1-xAlxSb asymmetric quantum well heterostructures. Physical Review B 79(23), article number: 235333. (10.1103/PhysRevB.79.235333)
Nedniyom, B.et al. 2009. Giant enhanced g-factors in an InSb two-dimensional gas. Physical Review B 80(12), article number: 125328. (10.1103/PhysRevB.80.125328)
Gilbertson, A. M.et al. 2009. High field magneto-transport in high mobility gated InSb/InAlSb quantum well heterostructures. ArXiv e-prints
Branford, W. R.et al. 2009. Magneto-transport in high mobility n-InSb/InAlSb quantum wells. Presented at: 2009 American Physical Society March Meeting, Pittsburgh, USA, 16-20 March 2009.

2008

Gilbertson, A. M.et al. 2008. Erratum: Zero-field spin splitting and spin lifetime in n-InSb∕In1−xAlxSb asymmetric quantum well heterostructures [Phys. Rev. B 77, 165335 (2008)]. Physical Review B: Condensed Matter and Materials Physics 78(7), article number: 079901(E). (10.1103/PhysRevB.78.079901)
Gilbertson, A.et al. 2008. Zero-field spin splitting and spin lifetime in n-InSb/In1-xAlxSb asymmetric quantum well heterostructures. Physical Review B: Condensed Matter and Materials Physics 77(16), article number: 165335. (10.1103/PhysRevB.77.165335)
Orr, J. M. S.et al. 2008. Electronic transport in modulation-doped InSb quantum well heterostructures. Physical Review B 77(16), article number: 165334. (10.1103/PhysRevB.77.165334)
Ashwell, G. J.et al. 2008. Functional molecular wires. Physical Chemistry Chemical Physics 10(14), pp. 1859-1866. (10.1039/b719417j)
Branford, W. R.et al. 2008. Gate dependence of spin-splitting in an InSb/InAlSb quantum well. Presented at: 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007Narrow gap semiconductors 2007: proceedings of the 13th International Conference on Narrow Gap Semiconductors, Guildford, UK, 8–12 July 2007. Springer Proceedings in Physics Vol. 119. Dordrecht: Springer pp. 3-5., (10.1007/978-1-4020-8425-6_1)
Eustace, D. A.et al. 2008. (S)TEM Characterisation of InAs/MgO/Co Multilayers. Presented at: Microscopy of semiconducting materials, 15th Conference, Cambridge, UK, 2-5 April 2007Proceedings of the 15th Conference on Microscopy of Semiconducting Materials, Cambridge, UK, 2-5 April 2007. Springer Proceedings in Physics Vol. 120. Dordrecht: Springer Verlag pp. 153-156., (10.1007/978-1-4020-8615-1_32)

2007

Orr, J. M. S.et al. 2007. One-dimensional conductance in surface gated InSb/AlInSb quantum well heterostructures. Presented at: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 24-28 July 2006 Presented at Jantsch, W. and Schäffler, F. eds.Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP Conference Proceedings Vol. 893. Melville, NY: American Institute of Physics pp. 729-730., (10.1063/1.2730097)
Singh, L. J.et al. 2007. Preparation of InAs(0 0 1) surface for spin injection via a chemical route. Journal of Physics D: Applied Physics 40(10), article number: 3190. (10.1088/0022-3727/40/10/024)
Sherliker, B.et al. 2007. Room temperature operation of AlGaN/GaN quantum well infrared photodetectors at a 3–4 µm wavelength range. Semiconductor Science and Technology 22(11), article number: 1240. (10.1088/0268-1242/22/11/010)
Orr, J. M. S.et al. 2007. A surface-gated InSb quantum well single electron transistor. New Journal of Physics 9(8), article number: 261. (10.1088/1367-2630/9/8/261)
Luxmoore, I. J.et al. 2007. Low temperature electrical characterisation of tungsten nano-wires fabricated by electron and ion beam induced chemical vapour deposition. Thin Solid Films 515(17), pp. 6791-6797. (10.1016/j.tsf.2007.02.029)
Ashwell, G. J.et al. 2007. Molecular electronics: connection across nano-sized electrode gaps. Chemical Communications(12), pp. 1254-1256. (10.1039/b615538c)
Orr, J. M. S.et al. 2007. A surface-gated InSb quantum well single electron transistor. New Journal of Physics 9(8), article number: 261. (10.1088/1367-2630/9/8/261)
Gilbertson, A.et al. 2007. Low-temperature Schottky barrier tunneling in InSb∕InxAl1−xSb quantum well heterostructures. Physical Review B: Condensed Matter and Materials Physics 76(8), article number: 85306. (10.1103/PhysRevB.76.085306)
Magnus, F.et al. 2007. Electrical characterization of MgO tunnel barriers grown on InAs (001) epilayers. Applied Physics Letters 91(12), article number: 122106. (10.1063/1.2784933)

2006

Orr, J. M. S.et al. 2006. Schottky barrier transport in InSb/AlInSb quantum well field effect transistor structures. Semiconductor Science and Technology 21(10), pp. 1408-1411. (10.1088/0268-1242/21/10/006)
Ross, I. M.et al. 2006. Characterisation of tungsten nano-wires prepared by electron and ion beam induced chemical vapour deposition. Journal of Physics. Conference Series 26(1), pp. 363-366. (10.1088/1742-6596/26/1/088)
Sherliker, B.et al. 2006. Effects of depletion on the emission from individual InGaN dots. Applied Physics Letters 88(12), article number: 122115. (10.1063/1.2186973)
Orr, J. M. S.et al. 2006. Low temperature impact ionization in indium antimonide high performance quantum well field effect transistors. Journal of Applied Physics 99(8), article number: 83703. (10.1063/1.2190075)

2005

Nash, G. R.et al. 2005. Lateral n–i–p junctions formed in an InSb quantum well by bevel etching. Semiconductor Science and Technology 20(2), pp. 144-148. (10.1088/0268-1242/20/2/007)
Gardelis, S.et al. 2005. Possible use of the half-Hausler alloy NiMnSb in spintronics: synthesis and physical properties of arc melted NiMnSb and of NiMnSb thin films grown on InSb by pulsed laser deposition. Journal of Physics: Conference Series 10, pp. 167-170. (10.1088/1742-6596/10/1/041)
Sherliker, B.et al. 2005. Normal incidence mid-infrared photocurrent in AlGaN/GaN quantum well infrared photodetectors. Acta Physica Polonica Series A 107(1), pp. 174-178.

2004

Gardelis, S.et al. 2004. Structural, magnetic, and electrical properties of NiMnSb thin films grown on InSb by pulsed-laser deposition. Applied Physics Letters 85(15), article number: 3178. (10.1063/1.1807026)
Androulakis, J.et al. 2004. Magnetic properties of the half-metallic ferromagnet NiMnSb grown on InSb by pulsed laser deposition. Applied Physics A: Materials Science and Processing 79(4-6), pp. 1211-1213. (10.1007/s00339-004-2720-0)

2002

Ashmore, A. D.et al. 2002. Optical properties of single charge tuneable InGaAs quantum dots. Physica E: Low-dimensional Systems and Nanostructures 13(2-4), pp. 127-130. (10.1016/S1386-9477(01)00502-1)
Nash, G. R.et al. 2002. Characterization of a two-dimensional electron gas in an InSb/InAlSb heterostructure using surface acoustic wave attenuation. Semiconductor Science and Technology 17(10), pp. 1111-1114. (10.1088/0268-1242/17/10/314)

2001

Finley, J.et al. 2001. Observation of multicharged excitons and biexcitons in a single InGaAs quantum dot. Physical Review B Condensed Matter and Materials Physics 63(16), article number: 161305. (10.1103/PhysRevB.63.161305)

2000

Buckle, P. D.et al. 2000. An inter-subband device with terahertz applications. IEEE Transactions on Microwave Theory and Techniques 48(4), pp. 632-638. (10.1109/22.841953)
Bridge, C. J.et al. 2000. Low temperature photoluminescence spectroscopy of thin film, polycrystalline CdTe/CdS solar cell structures. Semiconductor Science and Technology 15(10), pp. 975-979. (10.1088/0268-1242/15/10/308)
Bridge, C. J.et al. 2000. Photoluminescence spectroscopy and decay time measurements of polycrystalline thin film CdTe/CdS solar cells. Journal of Applied Physics 88(11), pp. 6451-6456. (10.1063/1.1324683)

1999

Buckle, P. D.et al. 1999. Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots. Journal of Applied Physics 86(5), pp. 2555-2561. (10.1063/1.371092)

1998

Buckle, P. D.et al. 1998. Charge accumulation in GaAs/AlGaAs triple barrier resonant tunneling structures. Journal of Applied Physics 83(2), pp. 882-887. (10.1063/1.366772)
Kuo, C.et al. 1998. An electrical and optical study of electrons in triple barrier structures. Physica E: Low-dimensional Systems and Nanostructures 2(1-4), pp. 815-819. (10.1016/S1386-9477(98)00166-0)

1997

Buckle, P. D.et al. 1997. Full wafer optical characterisation of resonant tunnelling structures using photoluminescence excitation spectroscopy. Journal of Crystal Growth 175-76(2), pp. 1299-1302. (10.1016/S0022-0248(96)01038-X)

1996

Main, P. C. and Buckle, P. D. 1996. Tunnel structures as probes of new physics [and discussion]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 354(1717), pp. 2311-2325. (10.1098/rsta.1996.0102)
Buckle, P. D. and Dawson, P. 1996. High density, spatially separated electron/hole plasmas in mixed type I-type II GaAs/AlAs heterostructures. Surface Science 361-2, pp. 431-434. (10.1016/0039-6028(96)00438-4)
Buckle, P. D.et al. 1996. Magnetic-field-induced modulation of intersubband scattering in a double-barrier resonant-tunneling structure. Physical Review B Condensed Matter and Materials Physics 53(20), pp. 13651-13655. (10.1103/PhysRevB.53.13651)
Cockburn, J. W.et al. 1996. Cross-barrier recombination in a GaAs/AlGaAs double-barrier resonant tunneling structure. Journal of Applied Physics 79(11), pp. 8844-8846. (10.1063/1.362511)

1994

Buckle, P. D.et al. 1994. Control of excited electron state populations in double-barrier resonant tunnelling structures. Semiconductor Science and Technology 9(5S), pp. 533-536. (10.1088/0268-1242/9/5S/036)
Cockburn, J. W.et al. 1994. Evidence for population inversion in excited electron states of a double barrier resonant tunneling structure. Applied Physics Letters 64(18), pp. 2400-2402. (10.1063/1.111627)
Teissier, R.et al. 1994. Observation of ballistic transport in double-barrier resonant-tunneling structures by electroluminescence spectroscopy. Physical Review B Condensed Matter and Materials Physics 50(7), pp. 4885-4888. (10.1103/PhysRevB.50.4885)
Turner, T. S.et al. 1994. Luminescence studies of resonant tunneling in a triple barrier structure with strongly coupled quantum wells. Solid-State Electronics 37(4-6), pp. 721-724. (10.1016/0038-1101(94)90285-2)
Harrison, P. A.et al. 1994. Intrinsic bistability in the electroluminescence spectrum and current-voltage characteristics of triple-barrier p-i-n resonant tunneling devices. Surface Science 305(1-3), pp. 353-357. (10.1016/0039-6028(94)90915-6)
Fisher, T. A.et al. 1994. Use of a narrow-gap prewell for the optical study of charge buildup and the Fermi-energy edge singularity in a double-barrier resonant-tunneling structure. Physical Review B Condensed Matter and Materials Physics 50(24), pp. 18469-18478. (10.1103/PhysRevB.50.18469)
Cockburn, J. W.et al. 1994. Optical spectroscopy of inverted electron populations in double-barrier resonant-tunnelling structures. Surface Science 305(1-3), pp. 375-379. (10.1016/0039-6028(94)90919-9)
Tagg, W. I. E.et al. 1994. Optical and electrical investigation of an asymmetric strained-layer double-barrier resonant-tunnelling structure. Semiconductor Science and Technology 9(9), pp. 1608-1615. (10.1088/0268-1242/9/9/007)
Teissier, R.et al. 1994. Magneto-optical studies of ballistic electron transport in single barrier heterostructures. Superlattices and Microstructures 15(4), pp. 373-376. (10.1006/spmi.1994.1072)

1992

Cockburn, J. W.et al. 1992. Electroluminescence recombination from excited-state carrier populations in double-barrier resonant-tunneling structures. Physical Review B Condensed Matter and Materials Physics 45(23), pp. 13757-13760. (10.1103/PhysRevB.45.13757)
Cockburn, J. W.et al. 1992. Investigation of electroluminescence from excited state carrier populations in double barrier resonant tunnelling structures. Superlattices and Microstructures 12(3), pp. 413-417. (10.1016/0749-6036(92)90293-E)

PX4221 Module organiser for Low Dimensional Semiconductor Devices (4th Yr Module)

PX1123 Responsible for First year undergraduate laboratory teaching

PX1223 Module organsier for first year undergarduate laboratory teaching

Third and fourth year project supervisor

Research interests

My research interests revolve around novel devices, mainly based on group III-V semiconductors. In particular I am interested in Heterostructures based around the narrow bandgap semiconductor InSb. Whilst this was a very early III-V semiconductor to be investigated, the lack of a lattice matched alloy has resulted in it being a much less investigated material for modern device applications. Whilst in my former role at QinetiQ Malvern I was involved in one of only two groups worldwide that had this growth capability. I currently work closely with the national centre for III-V technologies in Sheffield to continue this world lead for the UK.

In particular, I am interested in nanoscale devices and the spin properties of electrons in InSb QW 2DEGs, and novel devices based on the manipulation of this spin. As a result of the extremely large g factor in InSb, the spin orbit coupling is strong, and as a result spin effects are manifest in narrowgap materials that are almost irrelevant in wider bandgap counterparts. These effects may make these materials suitable for quantum information devices, where spin can be manipulated without large magnetic fields, microwave pulses, or ultra low temperatures.

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