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Dr Manoj Kesaria

Dr Manoj Kesaria

Advanced Materials and Devices - Sêr Cymru Research Group
Condensed Matter and Photonics Group

School of Physics and Astronomy

Room N/0.09 (A), Queen's Buildings - North Building, 5 The Parade, Newport Road, Cardiff, CF24 3AA

My research focus is on the epitaxial growth, characterisation and fabrication of group III-Nitrides and III- As/Sb optoelectronic devices. I use state of art dual system Veeco Gen 930 Molecular Beam Epitaxy (MBE) system to perform the growth of ultra-thin films, thin films, quantum well (QW), quantum dots (QD), nanostructures (nanowires) etc with a sub-monolayer and monolayer precision. I use MBE to grow layered structures to realise optoelectronic devices: light-emitting diodes (LED), photodiodes, avalanche photodiode (APD) and thermos-photovoltaics (TPV) of III-V semiconductors.

I manage epitaxy laboratory (E/0.16 previously known as E/0.19B) which host a unique dual-chamber MBE reactor with III- As/Sb and III-Nitride growth capability up to 3inch wafer. MBE reactor has in-situ reflection high energy electron diffraction (RHEED) for the real-time nucleation and growth of crystal surface. Epitaxy laboratory also has a Panalytical high-resolution x-ray diffraction (HRXRD) system for an 8-inch wafer scale structural characterisation.

My present research interests and ongoing research:

III-Nitride optoelectronic devices (Light Emitting Diodes, Photodiode, thermophotovoltaics etc.) based on III-As/Sb type-II superlattices (T2SL), quantum wells (QW) and nanostructures (nanowires), quantum dots (QD).

Before joining Cardiff University

2013-2018: I have worked as a senior researcher, during this period had an opportunity to work, interact and learn from Prof. Anthony Krier (Lancaster University), Prof. Chee Hing Tan and Prof John David (University of Sheffield), Prof. Amalia Patane (University of Nottingham) and Prof Stephen Sweeney (University of Surrey).

Worked as senior research associate on EPSRC projects:

EP/J015849/1 “InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications”

EP/M013707/1 “TPVs for Waste Heat Recovery in Energy Resilient Manufacturing”.

EP/N020715/1 “Realising a solid-state photomultiplier and infrared detectors through bismide containing semiconductors”.

For these projects have used Molecular Beam Epitaxy (MBE) for the growth of dilute nitride thin films and devices for mid-infrared applications and the combination of materials explored were based on InAs (Sb/N). Structures based on InAsN and InGaAsN MQW on metamorphic buffer layer, resonant tunnelling diodes (RTD) of InAsN/InAlAs, InAsSbN/InAs Photodiode and InAs/InAsSb type-II superlattice LED. I have grown In (As/Sb) thin films and diode structure for narrow gap materials for thermophotovoltaic (TPV). Have also developed high-quality InAs on metamorphic buffer layer on GaAs using InAs/AlSb strained layer superlattice. I have fabricated InAs, InGaAs, InGaAsBi, and III-Sb based photodiodes and avalanche photodiodes (APD) and have performed electrical characterization.

2012-2013: I have worked as a research scientist at the University of Houston, Texas and as Junior/Senior research fellow at Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore and National Physical Laboratory (NPL), New Delhi.

At Houston: I have performed MBE growth of high In containing InGaN, GaN and InN thin-film and device structure on a custom-built MBE reactor for III-Nitride Avalanche Photo-Diode (APD) for NASA-SBIR project.  Along with this "effect of nitrogen plasma study on the growth of GaN, InN and InGaN nanowires" was studied in details and II-VI lattice-matched buffer development for high In InGaN APDs.

2006-2011 (PhD research): 

PhD thesis title: "Study of the formation of defect controlled Gallium Nitride films and nanostructures by Molecular Beam Epitaxy"

PhD degree awarding institute: Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Bangalore.

PhD thesis supervisor: Prof. S.M.Shivarasad.

At Bangalore (JNCASR) 

I have performed MBE growth and characterisation of GaN-based thin-films and nanostructures using SVTA Inc. The reactor comprises of Plasma Assisted Molecular Beam Epitaxy (PA-MBE) equipped with Reflection High Energy Electron Diffraction (RHEED), Quartz Crystal Monitor (QCM), Ellipsometry and Atomic Absorption Spectroscopy and Cathodoluminesce. Also, I have done in-situ hetero-epitaxial adsorption and desorption study of metals (Pb) on a low (111) and high (55 12) index Silicon reconstructed surface by using ultra-high vacuum (UHV) system with X-ray Photoelectron Spectroscopy (XPS) and RHK- Scanning Tunnelling Electron Microscopy (STM).

At Delhi (NPL)

I have done In-situ hetero-epitaxial adsorption and desorption study of metals on a low and high index Silicon reconstructed surface using ultra-high vacuum (UHV) system with low energy electron diffraction (LEED), Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS).











Low Dimensional Semiconductor Devices (4th Yr Module) PX4221 

My research interests are on optoelectronic devices grown by Molecular Beam Epitaxy (MBE) which are based on III-Nitride and III-As/Sb materials. The structures and devices of interests are Type-II superlattices (T2SL), quantum wells (QW) and nanostructures (nanowires), quantum dots (QD) for optoelectronic devices (light-emitting diodes (LED), photodiodes, avalanche photodiode (APD) and thermos-photovoltaics(TPV) of III-V semiconductors)

Current supervision

Dhafer Alshahrani

Research student

Dominic Kwan

Dominic Kwan

Research student

Bernard Cooper

Research student