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Dr Qiang Li

Dr Qiang Li

Advanced Materials and Devices - Sêr Cymru Research Group
Condensed Matter and Photonics Group

School of Physics and Astronomy

+44 (0)29 2087 4665
Room N/3.15, Queen's Buildings - North Building, 5 The Parade, Newport Road, Cardiff, CF24 3AA
Available for postgraduate supervision

At Cardiff University, I am leading a new MOCVD activity. A brand new Aixtron Flip Top Close Coupled Showerhead (CCS) MOCVD system was recently commissioned, dedicated to III-As, III-P, and III-Sb growth on Si and III-V substrates. The unique CCS design allows an intrinsically uniform and reproducible growth for all the material systems of interest and provides a highly flexible process window for the deposition of a wide range of nanostructures (layers, fins, dots, wires). My group also works closely with the Institute for Compound Semiconductors (ICS) and The Future Compound Semiconductor Manufacturing Hub. We welcome all collaborators, both from academia and industry.

We are looking for a postdoctoral researcher with expertise in MOCVD III-V growth to join the group! Please send your CV to if you are interested. 

I received the B.S. degree in Microelectronics from Peking University, Beijing, China in 2009, and Ph.D. degree in Electronic and Computer Engineering (ECE) from The Hong Kong University of Science and Technology (HKUST) in 2014. Between 2014 and 2018, I was with the ECE Department of HKUST, first as a Research Associate (2014-2015), and then as a Research Assistant Professor (2015-2018). In March 2018 I joined Cardiff University as a Lecturer.

Professional memberships

  • Member of IEEE

Academic positions

  • 2018 - present: Lecturer, Cardiff University
  • 2015 - 2018: Research Assistant Professor, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology








PX1123 Fall 2019 Introductory Practical Physics I

Research interest

My research covers various aspects around metal-organic chemical vapour deposition (MOCVD) of compound semiconductors for device applications. I am particularly interested in lattice-mismatched growth of III-V photonic and electronic devices on silicon, a monolithic path towards future heterogeneous platforms. This involves developing a fundamental understanding of the nucleation process, crystal lattice engineering, defect study, and advanced materials characterization from macro- to the nanometer scale. My research activities are highly interdisciplinary. Rooted in material science, I am actively engaged in demonstrating novel device concepts as well as improving conventional devices in 3D geometries.

Research Grants (as PI)      



Tunnel epitaxy: building a buffer-less III-V-on-insulator (XOI) platform for on-chip light sources

Research Grants (as co-I)     


EP/P006973/1 Future Compound Semiconductor Manufacturing Hub                                           

I am interested in supervising PhD students in the areas of:

  • Semiconductor epitaxy
  • Compound semiconductor materials and devices