Professor Khaled Elgaid

2023

• Eblabla, A., Varghese, A., Chandrashekar, H., Uren, M. J., Kuball, M. and Elgaid, K. 2023. Low-loss MIM capacitor on thick SiO2 dielectric for GaN-on-Si substrates with Standard and elevated top electrode configurations. Presented at: 53rd European Microwave Conference (EuMC), Berlin, Germany, 19-21 September 2023Proceedings of 53rd European Microwave Conference. IEEE pp. 38-41., (10.23919/EuMC58039.2023.10290587)
• Kumar, A. et al. 2023. Optimization and fabrication of MEMS based piezoelectric acoustic sensor for wide frequency range and high SPL acoustic application. Micro and Nanostructures 179, article number: 207592. (10.1016/j.micrna.2023.207592)

2022

• Kumar, A., Varghese, A., Sharma, A., Prasad, M., Janyani, V., Yadav, R. and Elgaid, K. 2022. Recent development and futuristic applications of MEMS based piezoelectric microphones. Sensors and Actuators A: Physical 347, article number: 113887. (10.1016/j.sna.2022.113887)
• Alathbah, M. and Elgaid, K. 2022. Miniature mesa extension for a planar submicron AlGaN/GaN HEMT gate formation. Micromachines 13(11), article number: 2007. (10.3390/mi13112007)
• Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)

2021

• Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
• Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Novel slotted mmWave CPW branch line coupler for MMIC and sub-THz applications. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 111-114., (10.1109/ASDAM50306.2020.9393863)
• Alathbah, M., Eblabla, A. and Elgaid, K. 2021. Frequency doubler based on a lateral multi-channel GaN Schottky barrier diode for 5G technology. Presented at: 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM 2020), Smolenice, Slovakia, 11-14 October 20202020 13th International Conference on Advanced Semiconductor Devices And Microsystems (ASDAM). IEEE pp. 14-18., (10.1109/ASDAM50306.2020.9393861)
• Ghosh, S. et al. 2021. Origin(s) of anomalous substrate conduction in MOVPE-Grown GaN HEMTs on highly resistive silicon. ACS Applied Electronic Materials 3(2), pp. 813-824. (10.1021/acsaelm.0c00966)

2020

• Benakaprasad, B., Eblabla, A. M., Li, X., Crawford, K. G. and Elgaid, K. 2020. Optimization of ohmic contact for AlGaN/ GaN HEMT on low resistivity silicon. IEEE Transactions on Electron Devices 63(3), pp. 863-868. (10.1109/TED.2020.2968186)
• Smith, M. D. et al. 2020. GaN-on-diamond technology platform: bonding-free membrane manufacturing process. AIP Advances 10(3), article number: 35306. (10.1063/1.5129229)
• Eblabla, A., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2020. Membrane supported GaN CPW structures for high-frequency and high-power applications. Presented at: 2019 IEEE Asia-Pacific Microwave Conference (APMC), Marina Bay Sands, Singapore, 10-13 December 20192019 IEEE Asia-Pacific Microwave Conference (APMC). IEEE pp. 1179-1181., (10.1109/APMC46564.2019.9038731)

2019

• Benakaprasad, B., Eblabla, A., Li, X. and Elgaid, K. 2019. 90 GHz branch-line coupler on GaN-on-low resistivity silicon for MMIC technology. Presented at: 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, France, 1-6 Sept 201944th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz). IEEE pp. -., (10.1109/IRMMW-THz.2019.8873748)
• Eblabla, A., Li, X., Alathbah, M., Wu, Z., Lees, J. and Elgaid, K. 2019. Multi-channel AlGaN/GaN lateral schottky barrier diodes on low-resistivity silicon for sub-THz integrated circuits applications. IEEE Electron Device Letters 40(6), pp. 878-880. (10.1109/LED.2019.2912910)
• Chandrasekar, H. et al. 2019. Quantifying temperature-dependent substrate loss in GaN-on-Si RF technology. IEEE Transactions on Electron Devices 66(4), pp. 1681-1687. (10.1109/TED.2019.2896156)

2018

• Chandrasekar, H. et al. 2018. Buffer-induced current collapse in GaN HEMTs on highly resistive Si substrates. IEEE Electron Device Letters 39(10), pp. 1556-1559. (10.1109/LED.2018.2864562)
• Eblabla, A., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2018. High-performance MMIC inductors for GaN-on-low-resistivity silicon for microwave applications. IEEE Microwave and Wireless Components Letters 28(2), pp. 99-101. (10.1109/LMWC.2018.2790705)

2017

• Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I., Humphreys, C. and Elgaid, K. 2017. Passive components technology for THz-Monolithic Integrated Circuits (THz-MIC). Presented at: 18th International Radar Symposium (IRS), 2017, Prague, Czech Republic, 28-30 June 2017Radar Symposium Conference Proceedings. pp. 1-7., (10.23919/IRS.2017.8008166)
• Benakaprasad, B., Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Design and performance comparison of various terahertz microstrip antennas on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (APMC), Asia-Pacific, New Delhi, India, 5-9 Dec 2016Proceedings of the Asia-Pacific Microwave Conference 2016. IEEE, (10.1109/APMC.2016.7931368)
• Eblabla, A. M., Li, X., Wallis, D. J., Guiney, I. and Elgaid, K. 2017. GaN on low-resistivity silicon THz high-Q passive device technology. IEEE Transactions on Terahertz Science & Technology 7(1), pp. 93-97. (10.1109/TTHZ.2016.2618751)
• Benakaprasad, B., Eblabla, A., Li, X., Elgaid, K., Wallis, D., Guiney, I. and Humphreys, C. 2017. Terahertz microstrip elevated stack antenna technology on GaN-on-low resistivity silicon substrates for TMIC. Presented at: Microwave Conference (EuMC), 2016 46th European, London, UK, 4-6 Oct 2016Microwave Conference (APMC) 2016 Asia-Pacific. IEEE pp. 413., (10.1109/EuMC.2016.7824367)
• Eblabla, A., Benakaprasad, B., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2017. Low-loss MMICs viable transmission media for GaN-on-Low resistivity silicon technology. IEEE Microwave and Wireless Components Letters 27(1), pp. 10-12. (10.1109/LMWC.2016.2629964)

2016

• Benakaprasad, B. et al. 2016. Terahertz monolithic integrated circuits (TMICs) array antenna technology on GaN-on-Low resistivity silicon substrates. Presented at: 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),, Copenhagen, Denmark, 25-30 Sep 20162016 41st International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz),. IEEE, (10.1109/IRMMW-THz.2016.7758488)
• Elgaid, K., Houston, P. and Tasker, P. 2016. EPSRC projects in microwave, millimetre-wave and THz research, integration of RF circuits with high speed GaN switching on silicon substrates. Presented at: European Microwave Conference, London, 3-7 Oct 2016.
• Benakaprasad, B. et al. 2016. Terahertz microstrip single patch antenna technology on GaN-on-Low resistivity silicon substrates for TMIC. Presented at: IET Colloquium on Antennas, Wireless and Electromagnetics, Glasgow, UK, 26 May 2016.
• Eblabla, A., Li, X., Wallis, D., Benakaprasad, B., Guiney, I. and Elgaid, K. 2016. High frequency active and passives devices using GaN on low resistivity silicon. Presented at: ARMMS RF & Microwave Society Conference, Milton Common Nr Thame, UK, 18-19 Apr 2016.
• Elgaid, K. et al. 2016. MMIC-compatible microstrip technology for GaN-HEMTs on low resistivity silicon substrate. Presented at: International Workshop on Nitride Semiconductors (IWN 2016), Orlando, FL, USA, 2-7 Oct 2016.
• Eblabla, A., Li, X., Wallis, D., Guiney, I. and Elgaid, K. 2016. GaN-based HEMTs on low resistivity silicon technology for microwave applications. Presented at: 8th Wide Bandgap Semiconductor and Components Workshop, Harwell, UK, 12-13 Sept 2016.

2015

• Eblabla, A., Li, X., Thayne, I., Wallis, D. J., Guiney, I. and Elgaid, K. 2015. High performance GaN high electron mobility transistors on low resistivity silicon for X -Band Applications. IEEE Electron Device Letters 36(9), pp. 899-901. (10.1109/LED.2015.2460120)
• Eblabla, A., Wallis, D., Guiney, I. and Elgaid, K. 2015. Novel shielded coplanar waveguides on GaN-on-Low resistivity Si substrates for MMIC applications. IEEE Microwave and Wireless Components Letters 25(7), pp. 427-429. (10.1109/LMWC.2015.2429120)
• Eblabla, A., Li, X., Thayne, I., Wallis, D., Guiney, I. and Elgaid, K. 2015. Effect of AlN spacer in the layer structure on high Rf performance GaN-Based HEMTs on low resistivity silicon at K-Band application. Presented at: 11th International Conference on Nitride Semiconductors (ICNS-11), Beijing, China, 30 Aug - 4 Sept 2015.

2013

• Aref, I. and Elgaid, K. 2013. System level modeling of a digital communication channel based on SystemC. International Journal of Future Computer and Communication 2(3), pp. 210-214. (10.7763/IJFCC.2013.V2.154)
• Ahmed, N. A. S., Emhemmed, A. and Elgaid, K. 2013. Dual-radios hypermesh network based on CSMA protocol. Presented at: 2013 International Conference on Information Networking (ICOIN), Bangkok, Thailand, 28-30 January 2013. , (10.1109/ICOIN.2013.6496376)

2012

• Hettak, K., Ross, T., Elgaid, K., Thayne, I. G., Wight, J. and Morin, G. A. 2012. High-performance 3D on-chip air-gap spiral inductor and its application to filter design. Presented at: Asia-Pacific Microwave Conference 2011, 5-8 December 2011Asia-Pacific Microwave Conference 2011. IEEE pp. -.
• Ahmed, N. A. S. and Elgaid, K. 2012. Single and multi-channel networks: Performance comparison at system level. Presented at: 2012 8th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP), Poznan, 18-20 July 2012. pp. 1., (10.1109/CSNDSP.2012.6292766)
• Emhemmed, A. S., Ahmed, N. A. and Elgaid, K. 2012. EC-CPW fed elevated patch antenna. Presented at: 24th International Conference on Microelectronics (ICM), Algiers, Algeria, 16-20 Dec 2012. , (10.1109/ICM.2012.6471374)

2011

• Hettak, K. and Elgaid, K. 2011. 3D Ultra miniature MMIC TFMS 90° coupler fabricated with a standard air bridge process. Presented at: 41st European Microwave Conference, 10-13 October 20112011 41st European Microwave Conference. IEEE pp. -., (10.23919/EuMC.2011.6101979)
• Aghamoradi, F., McGregor, I., Roy, S. and Elgaid, K. 2011. Low-loss grounded elevated coplanar waveguide for sub-millimeter wave MMIC applications. Progress In Electromagnetics Research B 34, pp. 103-123. (10.2528/PIERB11072111)
• Aghamoradi, F., McGregor, I. and Elgaid, K. 2011. High performance resonators for mm-wave ICs. Presented at: 2010 Asia-Pacific Microwave Conference, 7-10 December 20102010 Asia-Pacific Microwave Conference. IEEE
• Donadio, O., Elgaid, K. and Appleby, R. 2011. Waveguide-to-microstrip transition at G-band using elevated E-plane probe. Electronics letters 47(2), pp. 115-116. (10.1049/el.2010.2926)

2010

• Aghamoradi, F., McGregor, I. and Elgaid, K. 2010. H-Band elevated CPW band-pass filters on GaAs substrate. Presented at: 40th European Microwave Conference 2010, Paris, France, 28-30 September 2010Proceedings 40th European Microwave Conference 2010. IEEE pp. -., (10.23919/EUMC.2010.5616390)
• Hwang, C., Lok, L., Chong, H. M. H., Holland, M., Thayne, I. G. and Elgaid, K. 2010. An ultra-low-power MMIC amplifier using 50-nm $\delta$ -doped $\hbox{In}_{0.52}\hbox{Al}_{0.48}\hbox{As/In}_{0.53} \hbox{Ga}_{0.47}\hbox{As}$ metamorphic HEMT. IEEE Electron Device Letters 31(11), pp. 1230-1232. (10.1109/LED.2010.2070484)
• Ahmed, N., Aref, I., Rodríguez-Salazar, F. and Elgaid, K. 2010. Network performance evaluation based on SoC design methodology. Presented at: 7th International Symposium on Communication Systems, Networks & Digital Signal Processing (CSNDSP 2010), 21-23 July 2010Communication Systems, Networks and Digital Signal Processing, CNSDSP, International Symposium on. IEEE pp. -.
• McGregor, I. and Elgaid, K. 2010. Low-power GaAs comparator and monostable. Electronics Letters 46(17), pp. 1214-1215. (10.1049/el.2010.1357)
• Aref, I., Ahmed, N., Rodríguez-Salazar, F. and Elgaid, K. 2010. Modeling of flocking behaviour system in SystemC. Presented at: Sixth Advanced International Conference on Telecommunications, Barcelona, Spain, 9-15 May 20102010 Sixth Advanced International Conference on Telecommunications. IEEE pp. 358., (10.1109/AICT.2010.29)
• McGregor, I., Lok, L. B., Hwang, C., Oxland, R., Whyte, G., Thayne, I. G. and Elgaid, K. 2010. Low complexity, low power, 10 GHz super-regenerative transceiver. Presented at: APMC 2009: Asia Pacific Microwave Conference, Singapore, Singapore, 7-10 December 20092009 Asia Pacific Microwave Conference. IEEE pp. 587-590., (10.1109/APMC.2009.5384157)
• McGregor, I., Aghamoradi, F. and Elgaid, K. 2010. An approximate analytical model for the quasi-static parameters of elevated CPW lines. IEEE Transactions on Microwave Theory and Techniques 58(12), pp. 3809-3814. (10.1109/TMTT.2010.2086552)
• Hwang, C., Lok, L. B., Thayne, I. G. and Elgaid, K. 2010. W-band microstrip band-pass filter using branch-line coupler with open stubs. Microwave and Optical Technology Letters 52(6), pp. 1436-1439. (10.1002/mop.25185)
• Emhemmed, A. S., McGregor, I. and Elgaid, K. 2010. Elevated conductor coplanar waveguide-fed three-level proximity-coupled antenna for G-band applications. IET Microwaves, Antennas & Propagation 4(11), pp. 1910-1915. (10.1049/iet-map.2009.0616)
• Aref, I., Ahmed, N., Rodríguez-Salazar, F. and Elgaid, K. 2010. Measuring and optimising convergence and stability in terms of system construction in systemC. Presented at: 2010 17th IEEE International Conference and Workshops on Engineering of Computer Based Systems (ECBS), Oxford, 22-26 March 2010. pp. 263., (10.1109/ECBS.2010.36)
• Aref, I., Ahmed, N., Rodriguez-Salazar, F. and Elgaid, K. 2010. Wireless extension into existing SystemC design methodology. Presented at: 2010 2nd International Conference on Computer Engineering and Technology (ICCET), Chengdu, China, 16-18 April 2010Computer Engineering and Technology (ICCET). pp. V3-374., (10.1109/ICCET.2010.5485893)
• Lok, L., Hwang, C., Thayne, I. and Elgaid, K. 2010. Demonstration of a W-band microstrip parallel coupled-line bandpass filter in GaAs technology. Presented at: IET Seminar on Passive RF and Microwave Components, Birmingham, UK, 21-21 Feb 2012Passive RF and Microwave Components. IEEE pp. 37., (10.1049/ic.2010.0174)

2009

• Lok, L. B., Hwang, C., Chong, H. M. H., Thayne, I. G. and Elgaid, K. 2009. A W-band MMIC vector modulator utilizing tandem couplers and 50nm MHEMTs. Presented at: European Microwave Conference (EuMC) 2009, 29 September -1 October 20092009 European Microwave Conference (EuMC). IEEE pp. -., (10.23919/EUMC.2009.5296151)
• Hwang, C., McGregor, I., Oxland, R., Whyte, G., Thayne, I. G. and Elgaid, K. 2009. An ultra-low power OOK RF transceiver for wireless sensor networks. Presented at: European Microwave Conference, 2009 (EuMC 2009), Rome, Italy, 29 September - 1 October 2009proceedings of the 2009 European Microwave Conference (EuMC). IEEE pp. -.
• Emhemmed, A. S. and Elgaid, K. 2009. Broadband micromachined microstrip patch antenna for G-band applications. Presented at: European Microwave Conference (EuMC) 2009, 29 September - 1 October 20092009 European Microwave Conference (EuMC). IEEE, (10.23919/EUMC.2009.5296036)
• Ahmed, N., Aref, I., Rodriguez-Salazar, F. and Elgaid, K. 2009. Wireless channel model based on SoC design methodology. Presented at: 2009 Fourth International Conference on Systems and Networks Communications, Porto, Portugal, 20-25 September 2009Systems and Networks Communications, 2009. ICSNC '09. Fourth International Conference on. IEEE pp. 72., (10.1109/ICSNC.2009.81)
• McGregor, I., Whyte, G. and Elgaid, K. 2009. Low complexity, 165 µW, 5 Mbit/s wideband radio front-end with range of several meters. Presented at: 2009 IEEE MTT-S International Microwave Symposium, Boston, MA, 7-12 June 20092009 IEEE MTT-S International Microwave Symposium Digest. IEEE pp. 397., (10.1109/MWSYM.2009.5165717)
• Hwang, C., Chong, H., Holland, M., Thayne, I. and Elgaid, K. 2009. Erratum for DC 35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics letters 45(14), pp. 764-764. (10.1049/el.2009.1741)
• Emhemmed, A. S. and Elgaid, K. 2009. G-band bowtie dipole antenna. Presented at: 3rd European Conference on Antennas and Propagation 2009, Berlin, Germany, 23-27 March 2009Proceedings of the 2009 3rd European Conference on Antennas and Propagation. IEEE pp. -.
• Aghamoradi, F., McGregor, I. and Elgaid, K. 2009. Performance enhancement of millimetre-wave resonators using elevated CPW. Electronics letters 45(25), pp. 1326-1328. (10.1049/el.2009.2348)
• Hwang, C., Lok, L., Thayne, I. and Elgaid, K. 2009. Parallel coupled-line bandpass filter with branch-line shape for G-band frequency. Electronics Letters 45(16), pp. 838-840. (10.1049/el.2009.0716)
• Hwang, C., Chong, H., Holland, M., Thayne, I. and Elgaid, K. 2009. DC–35 GHz low-loss MMIC switch using 50 nm gate-length MHEMT technology for ultra-low-power applications. Electronics letters 45(12), pp. 632-634. (10.1049/el.2009.0684)
• Hwang, C., Lok, L. B., Thayne, I. G. and Elgaid, K. 2009. A wide bandpass filter with defected ground structure for wide out-of-band suppression. Presented at: Asia Pacific Microwave Conference, 2009, Singapore, 7-10 December 2009. , (10.1109/APMC.2009.5385299)
• Lok, L. B., Singh, S., Wilson, A. and Elgaid, K. 2009. Impact of waveguide aperture dimensions and misalignment on the calibrated performance of a network analyzer from 140 to 325GHz. Presented at: 2009 73rd ARFTG Microwave Measurement Conference, Boston, MA, USA, 12 June 2009. , (10.1109/ARFTG.2009.5278062)
• Emhemmed, A. S., Elgaid, K. and Lok, L. B. 2009. Integrated micromachined millimeter wave patch antenna. Presented at: IEEE International Workshop on Antenna Technology, 2009, Santa Monica, CA, USA, 2-4 March 2009. pp. 1., (10.1109/IWAT.2009.4906903)
• Emhemmed, A. S., McGregor, I. and Elgaid, K. 2009. 200GHz broadband proximity coupled patch antenna. Presented at: IEEE International Conference on Ultra-Wideband, 2009, Vancouver, BC, Canada, 9-11 September 2009. , (10.1109/ICUWB.2009.5288756)
• Hettak, K., Elgaid, K., Thayne, I., Morin, G. and Stubbs, M. 2009. 3D MMIC compact semi-lumped loaded CPW stubs for spurious suppression fabricated with a standard air bridge process. Presented at: IEEE MTT-S International Microwave Symposium Digest, Boston, USA, 7-12 Jun 2009MTT-S International Microwave Symposium Digest. IEEE pp. 1033., (10.1109/MWSYM.2009.5165876)

2008

• Lok, L. B., Elgaid, K., Hwang, C. -., Robertson, I. D. and Chongcheawchamnan, M. 2008. Study of the deleterious effect of common-mode behavior on CPS branch-line couplers and Wilkinson dividers. Presented at: Asia-Pacific Microwave Conference (APMC 2007), Bangkok, Thailand, 11-14 December 20072007 Asia-Pacific Microwave Conference. IEEE pp. 1-4., (10.1109/APMC.2007.4554823)
• Hwang, C., Lok, L., Thayne, I. and Elgaid, K. 2008. μ-watt MMIC TX/RX for wireless sensor applications. Presented at: IET Seminar on RF and Microwave IC Design, London, UK, 28-28 Feb 20082008 IET Seminar on RF and Microwave IC Design. IEEE, (10.1049/ic:20080113)
• Aref, I. A., Ahmed, N. A., Rodriguez-Salazar, F. and Elgaid, K. 2008. RTL-level modeling of an 8B/10B encoder-decoder using SystemC. Presented at: 5th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08), Surabaya, Indonesia, 13 Jun 20085th IFIP International Conference on Wireless and Optical Communications Networks (WOCN '08). IEEE Xplore pp. 1., (10.1109/WOCN.2008.4542493)
• Lok, L. B., Hwang, C., Chong, H. M., Elgaid, K. and Thayne, I. G. 2008. Measurement and modeling of CPW transmission lines and power dividers on electrically thick GaAs substrate to 220GHz. Presented at: 33rd International Conference on Infrared, Millimeter and Terahertz Waves, 2008, Pasadena, CA, USA, 15-19 September 2008. , (10.1109/ICIMW.2008.4665794)

2007

• Arvind, D. K., Elgaid, K., Krauss, T., Paterson, A., Stewart, R. and Thayne, I. 2007. Towards an integrated design approach to specknets. Presented at: IEEE International Conference on Communications, Glasgow, UK, 24–28 June 20072007 IEEE International Conference on Communications. IEEE pp. 3319., (10.1109/ICC.2007.550)
• Edgar, D. et al. 2007. W-band performance of coplanar waveguide on thinned substrates. Presented at: 29th European Microwave Conference 1999, Munich, Germany, 5-7 October 1999Proceedings of 29th European Microwave Conference 1999. IEEE pp. 363-366., (10.1109/EUMA.1999.338569)
• Elgaid, K., Edgar, D. L., McCloy, D. A. and Thayne, I. G. 2007. CPW interconnects for MMIC applications on low resistivity CMOS grade silicon using micromachined SU8 negative resist. Presented at: 32nd European Microwave Conference 2002, Milan, Italy, 23-26 September 2002. pp. 1., (10.1109/EUMA.2002.339431)
• Collier, R. et al. 2007. A study of high frequency performance of coplanar waveguide as a function of substrate thickness. Presented at: 30th European Microwave Conference 2000, Paris, France, 2-5 October 20002000 30th European Microwave Conference. IEEE pp. 1-3., (10.1109/EUMA.2000.338733)
• Lodhi, T., McLelland, H., Elgaid, K., Ferguson, S., Edgar, D. L. and Thayne, I. G. 2007. InP-based W-band coplanar waveguide couplers. Presented at: 29th European Microwave Conference 1999, Munich, Germany, 5-7 October 19991999 29th European Microwave Conference. IEEE pp. 250-253., (10.1109/EUMA.1999.338320)
• Elgaid, K., Thayne, I., Whyte, G., Martens, J. and Culver, D. 2007. Parasitic moding influences on coplanar waveguide passive components at G-band frequency. Presented at: 36th European Microwave Conference 2006, Manchester, England, 10-15 September 20062006 European Microwave Conference. IEEE pp. 486-488., (10.1109/EUMC.2006.281398)
• Thayne, I. et al. 2007. 50 nm metamorphic GaAs and InP HEMTs. Thin Solid Films 515(10), pp. 4373-4377. (10.1016/j.tsf.2006.07.104)

2006

• Hettak, K., Stubbs, M., Elgaid, K. and Thayne, G. 2006. Design and characterization of elevated CPW and thin film microstrip structures for millimeter-wave applications. Presented at: European Microwave Conference, Paris, France, 4-6 Oct 20052005 European Microwave Conference. IEEE, (10.1109/EUMC.2005.1610067)
• Moran, D. A. J., McLelland, H., Elgaid, K., Whyte, G., Stanley, C. R. and Thayne, I. 2006. 50-nm self-aligned and 'standard' T-gate InP pHEMT comparison: the influence of parasitics on performance at the 50-nm node. IEEE Transactions of Electron Devices 53(12), pp. 2920-2925. (10.1109/TED.2006.885674)
• Zhou, H., Elgaid, K., Wilkinson, C. and Thayne, I. 2006. Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics 45(10B), article number: 8388. (10.1143/JJAP.45.8388)
• Thayne, I., Elgaid, K., Holland, M., McLelland, H., Moran, D., Thoms, S. and Stanley, C. 2006. 50nm GaAs mHEMTs and MMICs for ultra-low power distributed sensor network applications. Presented at: 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, Princeton, NJ, USA, 8-11 May 2006. , (10.1109/ICIPRM.2006.1634143)
• Elgaid, K. and Thayne, I. 2006. Monolithic millimetrewave integrated circuits (MMICs) issues beyond 100 GHz for high resolution imaging and radar applications. Presented at: 2006 IET Seminar on MM-Wave Products and Technologies, London, England, 16 November 2006IET Seminar on MM-Wave Products and Technologies, 2006, Vol. 2006. pp. 78-80., (10.1049/ic:20060114)

2005

• KaIna, K., Elgaid, K., Thayne, I. and Asenov, A. 2005. Modelling of InP HEMTs with high indium content channels. Presented at: International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, 8-12 May 2005International Conference on Indium Phosphide and Related Materials, 2005. IEEE pp. 192-195., (10.1109/ICIPRM.2005.1517454)
• Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. 2005. RF analysis of aggressively scaled pHEMTs. Presented at: 30th European Solid-State Device Research Conference 2000, Cork, Ireland, 11-13 September 200030th European Solid-State Device Research Conference. IEEE pp. 156-159., (10.1109/ESSDERC.2000.194738)
• Li, X., Elgaid, K., McLelland, H. and Thayne, I. 2005. Surface mass spectrometric analysis of SiCl4/SiF4/O2 dry etch gate recessed 120nm T-gate GaAs pHEMTs. Microelectronic Engineering 78-79, pp. 233-238. (10.1016/j.mee.2004.12.032)
• Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C. and Thayne, I. 2005. 50-nm T-gate metamorphic GaAs HEMTs with f/sub T/ of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters 26(11), pp. 784-786. (10.1109/LED.2005.857716)
• Elgaid, K., McLelland, H., Stariley, C. and Thayne, I. 2005. Low noise W-band MMMIC amplifier using 50nm InP technology for millimeterwave receivers applications. Presented at: nternational Conference on Indium Phosphide and Related Materials, 2005, Glasgow, 8-12 May 2005. , (10.1109/ICIPRM.2005.1517548)
• Elgaid, K., Moran, D., McLelland, H., Holland, M. and Thayne, I. 2005. Low noise high performance 50nm T-gate metamorphic HEMT with cut-off frequency f/sub T/ of 440GHz for millimeterwave imaging receivers applications. Presented at: International Conference on Indium Phosphide and Related Materials, 2005, Glasgow, 8-12 May 2005. pp. 141., (10.1109/ICIPRM.2005.1517439)

2004

• Xin, C. et al. 2004. Fabrication and performance of 50 nm T-gates for InP high electron mobility transistors. Microelectronic Engineering 73-74, pp. 818-821. (10.1016/S0167-9317(04)00227-8)
• Elgaid, K., Zhou, H., Wilkinson, C. and Thayne, I. 2004. Low temperature high density Si3N4 MIM capacitor technology for MMMIC and RF-MEMs applications. Microelectronic Engineering 73-74, pp. 452-455. (10.1016/S0167-9317(04)00191-1)
• Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. 2004. Self-aligned T-gate InP HEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering 73-74, pp. 814-817. (10.1016/S0167-9317(04)00226-6)
• Yang, L. et al. 2004. Impact of device geometry and doping strategy on linearity and RF performance in Si/SiGe MODFETs. Microelectronics Reliability 44(7), pp. 1101-1107. (10.1016/j.microrel.2004.04.003)
• Thayne, I. et al. 2004. Very high perfonnance 50 nm T-gate III-V HEMTs enabled by robust nanofabrication technologies. Presented at: 4th IEEE Conference on Nanotechnology, 2004, Munich, 16-19 August 2004. pp. 95., (10.1109/NANO.2004.1392261)

2003

• Macintyre, D. S. et al. 2003. Nanoimprint lithography process optimization for the fabrication of high electron mobility transistors. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 21(6), pp. 2783. (10.1116/1.1629719)
• Boyd, E. et al. 2003. 120nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilizing non-annealed ohmic contacts. Presented at: Compound Semiconductors 2002, Lausanne, Switzerland, 7-10 October 2002Proceedings of the Compound Semiconductors Conference 2002. Institute of Physics Conference Series Boca Raton: CRC Press pp. -.
• Moran, D. et al. 2003. Novel technologies for the realisation of GaAs pHEMTs with 120 nm self-aligned and nanoimprinted T-gates. Microelectronic Engineering 67-68, pp. 769-774. (10.1016/S0167-9317(03)00137-0)
• Elgaid, K., McCloy, D. A. and Thayne, I. G. 2003. Micromachined SU8 negative resist for MMIC applications on low resistivity CMOS substrates. Microelectronic Engineering 67-68, pp. 417-421. (10.1016/S0167-9317(03)00188-6)
• Yang, L. et al. 2003. Optimizations of sub-100 nm Si/SiGe MODFETs for high linearity RF applications. Presented at: 2003 IEEE Conference on Electron Devices and Solid-State Circuits, Hong Kong, China, 16-18 December 2003. pp. 331., (10.1109/EDSSC.2003.1283543)

2002

• Burns, G. et al. 2002. Millimetre wave high efficiency photonic crystal antennas. Presented at: 7th IEEE High Frequency Postgraduate Student Colloquium, London, UK, 8-9 September 20027th IEEE High Frequency Postgraduate Student Colloquium. IEEE, (10.1109/HFPSC.2002.1088425)
• Chongcheawchamnan, M., Nam, S., Robertson, I., Elgaid, K. and Thayne, I. 2002. Ultrawideband characterisation of CPW GaAs monolithic 60 GHz couplers using overlaid structures. Presented at: Asia-Pacific Microwave Conference 2001, Taipei, Taiwan, 3-6 December 2001APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577). IEEE pp. -., (10.1109/APMC.2001.985585)
• Ang, K., Robertson, I., Elgaid, K. and Thayne, I. 2002. 40 to 90 GHz impedance-transforming CPW Marchand balun. Presented at: 2000 IEEE MTT-S International Microwave Symposium, Boston, MA, USA, 11-16 June 20002000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), Vol. 2. IEEE pp. 1141-1144., (10.1109/MWSYM.2000.863559)
• Lodhi, T., Edgar, D. L., McLelland, H., Ferguson, S., Elgaid, K., Stanley, C. R. and Thayne, I. G. 2002. A 77 GHz coplanar waveguide MMIC BPSK vector modulator realised using InP technology. Presented at: Gallium Arsenide Integrated Circuit (GaAs IC), Annual IEEE Symposium, Seattle, WA, US, 5-8 November 2000GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuits Symposium. 22nd Annual Technical Digest 2000. (Cat. No.00CH37084). IEEE pp. 183-186., (10.1109/GAAS.2000.906319)
• Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. 2002. Performance of aggressively scaled pseudomorphic HEMTs: a monte carlo simulation study. Presented at: International EuroConference on Advanced Semiconductor Devices (ASDAM 2000), Smolenice, Slovakia, 16-18 October, 2000ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386). IEEE pp. 55-58., (10.1109/ASDAM.2000.889451)
• McPherson, D., Elgaid, K., Thayne, I., Robertson, I. and Lucyszyn, S. 2002. Ultra-broadband nonlinear PHEMT modelling using TOPAS/sup TM/. Presented at: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000, Glasgow, Scotland, UK, 14 November 20008th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534). IEEE pp. 85-88., (10.1109/EDMO.2000.919035)
• Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. 2002. Effect of impact ionization in scaled pHEMTs. Presented at: 8th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO 2000, Glasgow, Scotland, UK, 14 November 20008th IEEE International Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications (Cat. No.00TH8534). IEEE pp. 236-241., (10.1109/EDMO.2000.919065)
• Thayne, I. G. et al. 2002. On-wafer W-band determination of the driving point impedance of a double slot antenna. Presented at: Colloquium on Microwave Measurements: Current Techniques and Trends, London, England, UK, 23 February 1999IEE Colloquium on Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008), Vol. 1999. IET pp. 3-4., (10.1049/ic:19990026)
• Edgar, D. et al. 2002. W-band on wafer measurement of active and passive devices. Presented at: IEE Colloquium on Microwave Measurements: Current Techniques and Trends, London, U.K., 23 February 1999Proceedings of IEE Colloquium on Microwave Measurements: Current Techniques and Trends (Ref. No. 1999/008), Vol. 1999. IEEE, (10.1049/ic:19990025)
• Hutabarat, M. T. et al. 2002. On wafer intermodulation distortion measurements on resistive FET mixers for device comparison and model validation. Presented at: 1999 7th Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications : EDMO, London, England, United Kingdom, 22-23 November 19991999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401). IEEE pp. 170-175., (10.1109/EDMO.1999.821480)
• Cameron, N., Taylor, M., McLelland, H., Holland, M., Thayne, I., Elgaid, K. and Beaumont, S. 2002. A high performance, high yield, dry-etched, pseudomorphic HEMT for W-band use. Presented at: 1995 IEEE MTT-S International Microwave Symposium, Orlando, Florida, USA, 16-20 May 1995Proceedings of 1995 IEEE MTT-S International Microwave Symposium. IEEE pp. 438., (10.1109/MWSYM.1995.405952)
• Kalna, K., Roy, S., Asenov, A., Elgaid, K. and Thayne, I. 2002. Scaling of pseudomorphic high electron mobility transistors to decanano dimensions. Solid-State Electronics 46(5), pp. 631-638. (10.1016/S0038-1101(01)00331-8)

2001

• Li, X., Elgaid, K., McLelland, H. and Thayne, I. 2001. Effects of pressure and capping layer thickness on sub-micron T-gate recess etching of GaAs p-HEMTs by SiCl4/SiF4/O2 reactive ion etch. Microelectronic Engineering 57-58, pp. 633-640. (10.1016/S0167-9317(01)00495-6)
• Elgaid, K., Edgar, D., Ferguson, S., Beaumont, S. and Thayne, I. 2001. Fabrication of on-wafer MMIC compatible integrated NiCr loads. Microelectronic Engineering 57-58, pp. 801-806. (10.1016/S0167-9317(01)00504-4)
• Young, P., McPherson, D., Chrisostomidis, C., Elgaid, K., Thayne, I., Lucyszyn, S. and Robertson, I. 2001. Accurate non-uniform transmission line model and its application to the de-embedding of on-wafer measurements. IEE Proceedings - Microwaves, Antennas and Propagation 148(3), pp. 153-156. (10.1049/ip-map:20010402)
• Kalna, K., Asenov, A., Elgaid, K. and Thayne, I. 2001. Scaling of pHEMTs to Decanano Dimensions. VLSI Design 13(1-4), pp. 435-439. (10.1155/2001/19759)
• Yip, J. G. M., Collier, R. J., Jastrzebski, A. K., Edgar, D. L., Elgaid, K., Thayne, I. G. and Li, D. 2001. Substrate modes in double-layered coplanar waveguides. Presented at: 2001 31st European Microwave Conference, London, UK, 24-26 September 20012001 31st European Microwave Conference. IEEE, (10.1109/EUMA.2001.338997)

1999

• Ternent, G. et al. 1999. Coplanar waveguide transmission lines and high Q inductors on CMOS grade silicon using photoresist and polyimide. Electronics letters 35(22), pp. 1957-1958. (10.1049/el:19991298)
• Elgaid, K. et al. 1999. Optimisation of DC and RF performance of GaAs HEMT-based Schottky diodes. Electronics letters 35(19), pp. 1678-1679. (10.1049/el:19991104)

1997

• Thayne, I. et al. 1997. Front-end building blocks using the Glasgow 0.2 /spl mu/m GaAs MESFET process. Presented at: IEE Colloquium on RF and Microwave Circuits for Commercial Wireless Applications, London, United Kingdom, 13-13 February 1997IEE Colloquium on RF& Microwave Circuits for Commercial Wireless Applications (Digest No. 1997/026). IEE pp. 03-06., (10.1049/ic:19970168)

1996

• Elgaid, K., Edgar, D., Ferguson, S., Broadfoot, S., Taylor, M. and Beaumont, S. 1996. Compact low loss coplanar waveguide to slotline transition for MMMIC applications. Electronics Letters 32(18), pp. 1677. (10.1049/el:19961142)

1995

• Thayne, I. et al. 1995. Low-frequency noise of selectively dry-etch gate-recessed GaAs MESFETs. Electronics Letters 31(4), pp. 324-326. (10.1049/el:19950206)

1992

• Boolchand, P., McDaniel, D., Blue, C., Wu, Y., Enzweiler, R., Elgaid, K. and Burrows, R. 1992. Fe-site assignments in Y1Ba2Cu3O7 revisited. Hyperfine Interactions 68(1-4), pp. 15-25. (10.1007/BF02396448)

1990

• Boolchand, P. et al. 1990. Signature of twin planes in Mössbauer spectroscopy of cuprate superconductors. Hyperfine Interactions 62(1-2), pp. 73-88. (10.1007/BF02407664)

1988

• Boolchand, P. et al. 1988. Metallic doping sites in Y1Ba2Cu3O7−δ. Physical Review B (Condensed Matter) 38(16), pp. 11313-11316. (10.1103/PhysRevB.38.11313)
• Blue, C. et al. 1988. Oxygen-vacancy-formation enthalpy in YBa2(Cu0.985Fe0.015)3O7−δ oxide superconductor. Physical Review B (Condensed Matter) 37, article number: 5905R. (10.1103/PhysRevB.37.5905)