Ms Lydia Jarvis

2024

• Maglio, B., Jarvis, L., Tang, M., Liu, H. and Smowton, P. M. 2024. Modelling the effects of p-modulation doping in InAs/InGaAs quantum dot devices. Optical and Quantum Electronics 56(4), article number: 687. (10.1007/s11082-024-06362-2)

2022

• Jarvis, L. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. PhD Thesis, Cardiff University.
• Deng, H. et al. 2022. The role of different types of dopants in 1.3 μm InAs/GaAs quantum-dot lasers. Journal of Physics D: Applied Physics 55(21), article number: 215105. (10.1088/1361-6463/ac55c4)
• Jarvis, L. K. et al. 2022. Active region doping strategies in O-band InAs/GaAs quantum-dot lasers. Presented at: SPIE OPTO, 2022, 22-27 January 2022. Society of Photo-optical Instrumentation Engineers, (10.1117/12.2614632)

2021

• Maglio, B. et al. 2021. The limits to peak modal gain in p-modulation doped indium arsenide quantum dot laser diodes. Presented at: 2021 IEEE Photonics Conference (IPC), Vancouver, BC, Canada, 18-21 October 20212021 IEEE Photonics Conference (IPC). IEEE pp. 1-2., (10.1109/IPC48725.2021.9592852)
• Mahoney, J. et al. 2021. QCSE and carrier blocking in P-modulation doped InAs/InGaAs quantum dots. Presented at: CLEO: Applications and Technology 2021, 9-14 May 2021OSA Technical Digest. , (10.1364/CLEO_AT.2021.JTU3A.167)

2019

• Le Boulbar, E. D. et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 20192019 21st International Conference on Transparent Optical Networks (ICTON). IEEE pp. 1-4., (10.1109/ICTON.2019.8840542)
• Le Boulbar, E. D. et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
• Jarvis, L. et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.