Dr David Hayes

Conferences

• Hayes, D. and Quaglia, R. 2020. GaN Doherty MMIC power amplifiers for satellite Ka-band downlink. Presented at: 2020 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMiC), Cardiff, Wales, 16-17 July 2020.
• Le Boulbar, E. D.et al. 2019. Characterization of gain and loss of In(Ga)As/GaAs quantum dot active region for high temperature operation. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019. pp. -.
• Le Boulbar, E. D.et al. 2019. Temperature dependent behavior of the optical gain and electroabsorption modulation properties of an InAs/GaAs quantum dot epistructure. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 2019.
• Abadia, N.et al. 2019. Plasmonic integrated multimode filter. Presented at: 21st International Conference on Transparent Optical Networks ICTON 2019, Angers, France, 9-13 July 2019.
• Smith, G. V.et al. 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17), State College, PA, USA, 31 July - 4 August 2017.

Articles

• McIndo, C.et al. 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964, article number: 12005. (10.1088/1742-6596/964/1/012005)
• McIndo, C. J.et al. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91, pp. 169-172. (10.1016/j.physe.2017.04.019)
• Hayes, D. G.et al. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32, article number: 85002. (10.1088/1361-6641/aa75c8)