Dr Craig Allford
Honorary Research Associate
- allfordcp1@cardiff.ac.uk
- 02920 875468
- 0.01 53 The Parade, Adeiladau'r Frenhines - Adeilad y Gogledd, 5 The Parade, Heol Casnewydd, Caerdydd, CF24 3AA
Bywgraffiad
Education and qualifications:
2016: PhD (Physics), Thesis: "Resonant Tunnelling in GaAs/AlGaAs Triple Barrier Heterostructure", Cardiff University, Cardiff, UK
2009: BSc Theoretical and Computational Physics, Cardiff University, Cardiff, UK.
Career Overview:
January 2017 - Present: Research Fellow, School of Engineering, University of Warwick, Coventry, UK.
January 2017 - Present: Honorary Research Associate, School of Physics and Astronomy, Cardiff University, Cardiff, UK.
May 2016 - December 2016: Research Associate, School of Physics and Astronomy, Cardiff University, Cardiff, UK.
Aelodaethau proffesiynol
Member of the Institute of Physics (IoP).
Cyhoeddiadau
2020
- Li, Z.et al. 2020. Monolithic InP quantum dot mode-locked lasers emitting at 730 nm. IEEE Photonics Technology Letters 32(17), pp. 1073-1076.
- Alharbi, R.et al. 2020. Design and realisation of InP mode-locked lasers emitting in the 730nm wavelength range. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.
2019
- Li, Z.et al. 2019. Monolithic growth of InAs quantum dots lasers on (001) silicon emitting at 1.55 μm. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908479)
- Li, Z.et al. 2019. InP quantum dot mode-locked lasers and materials studies. Presented at: 2019 IEEE Photonics Conference (IPC), San Antonio, TX, USA, 2- Sept - 3 Oct 20192019 IEEE Photonics Conference (IPC). IEEE pp. 1., (10.1109/IPCon.2019.8908334)
- Shutts, S.et al. 2019. Degradation of III-V quantum dot lasers grown directly on silicon substrates. IEEE Journal of Selected Topics in Quantum Electronics 25(6), article number: 1900406. (10.1109/JSTQE.2019.2915994)
- Jarvis, L.et al. 2019. Increasing gain in p-modulation-doped InAs quantum-dot lasers. Presented at: Novel In-Plane Semiconductor Lasers XIX, San Francisco, CA, USA, 3-6 February 2020.
- Allford, C. P.et al. 2019. InP quantum dot monolithic mode-locked lasers for ultrashort pulse generation at 735 nm. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
- Li, Z.et al. 2019. Monolithic growth InAs quantum dots lasers on (001) silicon emitting at 1.5 um. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
- Li, Z.et al. 2019. Monolithically mode-locked self-assembled InP quantum dot lasers. Presented at: UK Semiconductors Conference 2019 (UKSC 2019), Sheffield, England. U.K., 10-11 July 2019.
- Allford, C.et al. 2019. Optical gain and absorption of 1.55 um emitting InAs quantum dot lasers directly grown on (001) silicon. Presented at: European Semiconductor Laser Workshop 2019 (ESLW 2019), Tyndall National Institute, University College Cork, Cork, Ireland, 27-28 September 2019.
- Li, Z.et al. 2019. 12.5-GHz InP quantum dot monolithically mode-locked lasers emitting at 740 nm. Presented at: CLEO: Science and Innovations 2019, San Jose, CA, USA, 5-10 May 2019CLEO: Science and Innovations 2019. Optical Society of America pp. SM3N.6., (10.1364/CLEO_SI.2019.SM3N.6)
2018
- Shutts, S.et al. 2018. Degradation studies of InAs/GaAs QD lasers grown on Si. Presented at: ISLC 2018: 26th In ternational Semiconductor Laser Conference, Santa Fe, NM, USA, 16-19 September 20182018 IEEE International Semiconductor Laser Conference (ISLC). Piscataway, NJ: IEEE pp. 85-86., (10.1109/ISLC.2018.8516178)
- McIndo, C.et al. 2018. Optical microscopy as a probe of the rate limiting transport lifetime in InSb/Al1-xInxSb quantum wells. Journal of Physics: Conference Series 964, article number: 12005. (10.1088/1742-6596/964/1/012005)
- McIndo, C. J.et al. 2018. Advances in electron transport in InSb/AlxIn1-xSb quantum wells. Presented at: International Symposium on Quantum Hall Effects and Related Topics (QHE2018), Max Planck Institute for Solid State Research, Stuttgart, Germany, 27-29 June 2018.
- Allford, C. P.et al. 2018. Barrier width effects in InAsP/AlGaInP quantum dot lasers. Presented at: UK Semiconductor Conference 2018 (UKSC 2018), Sheffield, UK, 4-5 July 2018.
2017
- Allford, C. P. and Buckle, P. D. 2017. Strain compensated InGaAs/AlAs triple barrier resonant tunnelling structures for THz applications. IEEE Transactions on Terahertz Science & Technology 7(6), pp. 772-779. (10.1109/TTHZ.2017.2758266)
- McIndo, C. J.et al. 2017. Determination of the transport lifetime limiting scattering rate in InSb/AlxIn1−x Sb quantum wells using optical surface microscopy. Physica E: Low-dimensional Systems and Nanostructures 91, pp. 169-172. (10.1016/j.physe.2017.04.019)
- Hayes, D. G.et al. 2017. Electron transport lifetimes in InSb/Al1-x In x Sb quantum well 2DEGs. Semiconductor Science and Technology 32, article number: 85002. (10.1088/1361-6641/aa75c8)
- Smith, G. V.et al. 2017. Anomalous large apparent oscillation of effective g-factor in an InSb quantum well two-dimensional electron gas. Presented at: Electronic Properties of Two-Dimensional Systems 2017 (EP2DS 17), State College, PA, USA, 31 July - 4 August 2017.
2016
- Allford, C. 2016. Resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. PhD Thesis, Cardiff University.
2015
- Allford, C. P.et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier heterostructures. Semiconductor Science and Technology 30(10), article number: 105035. (10.1088/0268-1242/30/10/105035)
- Allford, C. P.et al. 2015. Thermally activated resonant tunnelling in GaAs/AlGaAs triple barrier tunnelling structures. Presented at: UK Semiconductor Conference 2014 (UKSC 2014), Sheffield, UK.
- Allford, C. P., Buckle, P. D. and Missous, M. 2015. Critical state alignment and charge accumulation in triple barrier resonant tunnelling structures. Presented at: Workshop on Compound Semiconductor Devices and Integrated Circuits 2015, Smolenice, Slovakia, 8-10 June 2015.
