Ewch i’r prif gynnwys
Dr Juan Pereiro Viterbo

Dr Juan Pereiro Viterbo


Ysgol Ffiseg a Seryddiaeth

+44 (0)29 2087 0933
WX/1.10, Adeiladau'r Frenhines - estyniad y Gorllewin, 5 The Parade, Heol Casnewydd, Caerdydd, CF24 3AA
Dr. Juan Pereiro (JP) received a PhD in Physics at Universidad Politecnica de Madrid (UPM-ISOM) in November 2009, researching on wide band gap semiconductor, growth, fabrication, device design and characterization.

Following his PhD, he was appointed as a research fellow in Nanyang Technological University in Singapore, and worked as a visiting scientist in Brookhaven National Laboratory (NY, USA) at Dr. Ivan Bozovic’s Molecular Beam Epitaxy group. His work was focused on the growth and characterization of high temperature superconductors. JP studied La2-xSrxCuO4 nanostructure formation, participated in the discovery of a metal to insulator transition in WO3 thin films, and applied Low Energy Electron Microscopy (LEEM) to the imaging of viruses and superconducting structures.

Next, JP was appointed as a post-doctoral fellow at UCSD (San Diego, CA, USA) in Prof. Ivan K. Schuller’s group, where he worked on the growth and characterization of superconductors and magnetic materials. JP participated in the discovery of a new magnetic material.

Anrhydeddau a Dyfarniadau

FPI fellowship (Researcher Personnel Training) from Madrid government (Granted: 2004, duration: 4 years)

Awarded with IBS young scientist fellowship in 2014

Memberships: Institute of Physics
Member of Committee Semiconductors Physics Group IOP
Marie Curie Fellow starting September 2016
Referee in peer reviewed publications for American Institute of Physics, American Physical Society, Institute of Physics, IEEE and Elsevier.









Research interests

My current research focuses on the study of nucleation and relaxation phenomena in thin films and nanostructures of III-As semiconductors.

The laboratory hosts a unique Molecular Beam Epitaxy/Low Energy Electron Microscope system that allows real-time imaging of real and reciprocal space of the surface of the sample during growth with atomic resolution in z axis and 5 nanometer resolution in x-y directions.