Dr Clarence C Matthai

Year 1 Tutor

Ysgol Ffiseg a Seryddiaeth

: clarence.matthai@astro.cf.ac.uk
: +44 (0)29 2087 5111
: WX/1.07, Adeiladau'r Frenhines - estyniad y Gorllewin, 5 The Parade, Heol Casnewydd, Caerdydd, CF24 3AA

Year 1 tutor
Member of Course committee
Exam Panel
Staff-student committee

I read Physics at Imperial College and got my DPhil from Oxford University. I have been at Cardiff since 1984.

2011

Matthai, C. C. and March, N. H. 2011. The application of condensed matter methods to the study of the conformation and elastic properties of biopolymers and the transport of DNA through cell membranes. Theoretical Chemistry Accounts 130(4-6), pp. 1155-1167. (10.1007/s00214-011-1022-9)
Gavartin, J. L. and Matthai, C. C. 2011. Modelling of the Structural and Dynamical Properties of Porous Silicon. Presented at: MRS Fall Meeting, Boston, MA, 27 November - 1 December 1995, Vol. 407. Materials Research Society Conference Proceedings Cambridge University Press, (10.1557/PROC-407-45)
Bhatti, Q. A., Moran, G. J. and Matthai, C. C. 2011. Computer Simulation of Surface Diffusion of Silicon and Carbon Adatoms on SiC(001). Presented at: MRS Spring Meeting 1996, San Francisco, CA, 4 - 12 April 1996, Vol. 423. Materials Research Society Conference Proceedings Cambridge University Press pp. 439-444., (10.1557/PROC-423-439)
Moran, G. J., Morrison, I. and Matthai, C. C. 2011. A molecular dynamics study of InGaAs layers on GaAs substrates. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994, Vol. 340. Materials Research Society Conference Proceedings Cambridge University Press pp. 315-320., (10.1557/PROC-340-315)
Matthai, C. C., Moran, G. J. and Morrison, I. 2011. Computer simulation of Si and C atoms on SiC surfaces. Presented at: 1994 MRS Spring Meeting, San Francisco, CA, 4 - 8 April 1994, Vol. 339. Materials Research Society Conference Proceedings Cambridge University Press pp. 21-26., (10.1557/PROC-339-21)
Cafolla, A. A., Shen, T. and Matthai, C. C. 2011. A Study of the structural properties of porous silicon. Presented at: 1992 MRS Spring Meeting & Exhibit. Symposium W: Computational Methods in Materials Science, San Francisco, CA, 27 April -1 May 1992 Presented at Glicksman, M. E., Mark, J. E. and Marsh, S. P. eds.Computational Methods in Materials Science: Symposium Held April 27-May 1, 1992, San Francisco, California, U.S.A. (Materials Research Society Symposium Proceedings, 278), Vol. 278. Materials Research Society symposium proceedings Pittsburgh: Cambridge University Press, (10.1557/PROC-278-109)
Hughes, A., Shen, T. and Matthai, C. C. 2011. Antimony as A Passivant of Si(111) in the Si(111) (√3×√3)-Sb System. Presented at: 1992 MRS Spring Meeting - Symposium B . Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing, San Francisco, CA, 27-29 April 1992 Presented at Helms, C. R., Hirose, M. and Nemanich, R. J. eds.Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 192, San Francisco, California, U.S.A.. Materials Research Society symposium proceedings Vol. 259. Pittsburgh, Pa: Cambridge University Press, (10.1557/PROC-259-505)

2010

March, N. H., Chulkov, E. V., Echenique, P. M. and Matthai, C. C. 2010. Phase transitions driven by quasiparticle interactions. Phase Transitions 83(12), pp. 1085-1095. (10.1080/01411594.2010.509641)

2009

March, N. H. and Matthai, C. C. 2009. The application of quantum chemistry and condensed matter theory in studying amino-acids, protein folding and anticancer drug technology. Theoretical Chemistry Accounts 125(3-6), pp. 193-201. (10.1007/s00214-009-0558-4)
Matthai, C. C., March, N. H. and Lamoen, D. 2009. Supercooled molecular liquids and the glassy phases of chemically bonded N, P, As, Si and Ge. Physics and Chemistry of Liquids 47(6), pp. 607-613. (10.1080/00319100903148553)
March, N. H. and Matthai, C. C. 2009. Electron/hole liquids in highTcsuperconductors and easy paths for supercarriers through the vibrational lattice. Physics and Chemistry of Liquids 47(4), pp. 467-470. (10.1080/00319100902873037)
Matthai, C. C., Grout, P. J. and March, N. H. 2009. Force fields in d-band metals. International Journal of Quantum Chemistry 14(S12), pp. 443-459. (10.1002/qua.560140839)

2008

Matthai, C. C. and March, N. H. 2008. Velocity of sound and the BCS interaction parameter in five body-centred-cubic crystals. Superconductor Science and Technology 21(1), article number: 15012. (10.1088/0953-2048/21/01/015012)
Angilella, G. G. N., March, N. H., Matthai, C. C. and Pucci, R. 2008. The role of anharmonicity in a variety of phase transitions controlled by pressure, including melting, brittle-to-ductile transition, and the liquid-vapour critical point. Journal of Physics: Conference Series 121(1), article number: 12001. (10.1088/1742-6596/121/1/012001)

2007

Matthai, C. C. and March, N. H. 2007. On the pressure dependence of the melting temperature and the monovacancy formation energy in transition metals. Philosophical Magazine Letters 87(7), pp. 475-482. (10.1080/09500830701320307)
March, N. H., Suhai, S. and Matthai, C. C. 2007. Melting temperature and a precursor phase change in bacteriorhodopsin as function of pH. Physics and Chemistry of Liquids 45(6), pp. 695-699. (10.1080/00319100701593984)

2006

Matthai, C. C. and March, N. H. 2006. Melting transitions in metallic elements correlated with shear modulus and atomic volume. Physics and Chemistry of Liquids 44(3), pp. 329-336. (10.1080/00319100500284926)
Matthai, C. C. and Bacon, D. J. 2006. Relaxed vacancy formation and surface energies in b.c.c. transition metals. Philosophical Magazine A 52(1), pp. 1-3. (10.1080/01418618508237600)
Matthai, C. C. 2006. Calculation of defect migration energies using molecular dynamics. Philosophical Magazine A 52(3), pp. 305-308. (10.1080/01418618508237628)

2005

Balaban, A. T., Klein, D. J., March, N. H. and Matthai, C. C. 2005. Transport and thermodynamic properties in low melting point ionic liquids related ton-alkyl chain length. Physics and Chemistry of Liquids 43(4), pp. 403-407. (10.1080/00319100500165976)
Oloumi, M., Matthai, C. C. and Shen, T. H. 2005. Band Offsets in Strained Layer Superlattices. Iranian Journal of Physics Research 4(3), pp. 77-80.

2004

Matthai, C. C. and Loebl, H. C. 2004. Simulation Studies of Protein Translocation in Mitochondria. Physica A Statistical Mechanics and its Applications 342(3-4), pp. 612-622. (10.1016/j.physa.2004.05.039)
Randel, R., Loebl, H. C. and Matthai, C. C. 2004. Molecular dynamics simulations of polymer translocations. Macromolecular Theory and Simulations 13(5), pp. 387-391. (10.1002/mats.200300019)
March, N. H. and Matthai, C. C. 2004. A representation of the energy gap in diamond-structure semiconductors. Philosophical Magazine Letters 84(5), pp. 335-340. (10.1080/09500830410001675696)
Matthai, C. C. and Loebl, H. 2004. Molecular modelling of Bio-polymer translocation across nanopores in cellular membranes. Presented at: Modeling and Simulating Materials Nanoworld, Symposium- "Modeling and Simulating Materials Nanoworld" (Part C), of the 3rd International Conference "Computational Modeling and Simulation of Materials, Sicily, Italy, 30 May - 4 June 2004 Presented at Vincenzini, P. and Zerbetto, F. eds.Modeling and simulating materials nanoworld. Vol. 44.

2003

Matthai, C. C. and Graham, I. 2003. Investigation of the Forest-Fire Model on a Small-World Network. Physical Review E 68(3), article number: 36109. (10.1103/PhysRevE.68.036109)
Loebl, H. C., Randel, R., Goodwin, S. P. and Matthai, C. C. 2003. Simulation Studies of Polymer Translocation through a Channel. Physical Review E 67(4), pp. 04191301-04191305. (10.1103/PhysRevE.67.041913)

2002

McCaffery, G., Griffith, T. M., Frennaux, M. P., Naka, K. and Matthai, C. C. 2002. Wavelet and receiver operating characteristic analysis of heart rate variability. Physical Review E 65(2), article number: 22901. (10.1103/PhysRevE.65.022901)
March, N. H., Doren, V. E. V. and Matthai, C. C. 2002. Trends of combinations of elastic constants of covalent semiconductors with mean interelectronic separation. Philosophical Magazine 82(12), pp. 2475-2481. (10.1080/01418610210145376)
March, N. H., Doren, V. E. V. and Matthai, C. C. 2002. Trends of combinations of elastic constants of covalent semiconductors with mean interelectronic separation. Philosophical Magazine A 82(12), pp. 2475-2481. (10.1080/01418610210145376)

2001

Matthai, C. C., Maurice, R. G. and Randel, R. 2001. Molecular dynamics simulations of biological polymers. Abstracts of Papers of the American Chemical Society 221(1), pp. U330.

2000

Osetsky, Y. N., Bacon, D. J., Matthai, C. C. and March, N. H. 2000. Cleavage force, tribology and bond breaking in some transition metals. Journal of Physics and Chemistry of Solids 61(12), pp. 2055-2060. (10.1016/S0022-3697(00)00208-0)
Westwood, D., Brown, I. H., Linsell, D. N. J. and Matthai, C. C. 2000. Dynamics of the growth of InAs quantum dots on GaAs(001) substrates. Presented at: Semiconductor quantum dots, San Francisco, CA, 5-8 April 1999 Presented at Moss, S. C. et al. eds.Semiconductor quantum dots : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. Materials Research Society symposia proceedings Vol. 571. Warrendale, PA: Materials Research Society pp. 337-342.

1999

Maurice, R. and Matthai, C. C. 1999. Force-extension curves for a single polymer chain under varying solvent conditions. Physical Review E 60(3), pp. 3165-3169. (10.1103/PhysRevE.60.3165)
Westwood, D. I., Sobiesierski, Z. and Matthai, C. C. 1999. The dynamics of quantum dot formation in the InAs on GaAs(001) system: growth rate effects. Applied Surface Science 144-45, pp. 484-487. (10.1016/S0169-4332(98)00845-9)

1998

Westwood, D. I., Sobiesierski, Z., Matthai, C. C., Steimetz, E., Zettler, T. and Richter, W. 1998. Processes of quantum dot formation in the InAs on GaAs(001) system: A reflectance anisotropy spectroscopy study. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 16(4), pp. 2358-2366. (10.1116/1.590175)
James, E. and Matthai, C. C. 1998. An extended BFM model for simulation of copolymers at an interface. Computational Materials Science 10(1-4), pp. 175-179. (10.1016/S0927-0256(97)00177-8)
Sobiesierski, Z., Westwood, D. I. and Matthai, C. C. 1998. Aspects of reflectance anisotropy spectroscopy from semiconductor surfaces. Journal of Physics: Condensed Matter 10(1), pp. 1-43. (10.1088/0953-8984/10/1/005)
Matthai, C. C. and Moran, G. A. 1998. Adsorption and diffusion of Ga, In and As adatoms on (001) and (111) GaAs surfaces: a computer simulation study. Applied Surface Science 123-4, pp. 653-657. (10.1016/S0169-4332(97)00442-X)
Ke, M., Matthai, C. C., Pavlov, A. and Laiho, R. 1998. Schottky barrier height at the Au/porous silicon interface. Applied Surface Science 123-4, pp. 454-457. (10.1016/S0169-4332(97)00488-1)
Bhatti, Q. A. and Matthai, C. C. 1998. Critical thickness and growth modes of SiC layers on Si substrates - a molecular dynamics study. Applied Surface Science 123-4, pp. 7-10. (10.1016/S0169-4332(97)00499-6)
Bhatti, Q. A. and Matthai, C. C. 1998. Computer simulation of adatom dynamics on single-stepped SiC(001) surfaces. Thin Solid Films 318(1-2), pp. 46-51. (10.1016/S0040-6090(97)01136-X)
Anyele, H., Griffiths, C. L., Cafolla, A., Matthai, C. C. and Williams, R. 1998. Metal-semiconductor fluctuations on reconstructed Sn--Si(111) surfaces. Applied Surface Science 123-4, pp. 480-484. (10.1016/S0169-4332(97)00527-8)

1997

Matthai, C. C. and March, N. H. 1997. Cleavage force as a function of separation in a finite model of silicon with a chemically bonded force field. Journal of Physics and Chemistry of Solids 58(5), pp. 765-767. (10.1016/S0022-3697(96)00197-7)
Bass, J. M. and Matthai, C. C. 1997. Theoretical study of the Si/GaAs(001)-c(4×4) surface. Physical Review B 55(19), article number: 13032. (10.1103/PhysRevB.55.13032)

1996

Levermann, A. H. et al. 1996. The atomic structure of the Si(111) reconstruction. Applied Surface Science 104-05, pp. 124-129. (10.1016/S0169-4332(96)00132-8)
Ke, M., Westwood, D., Matthai, C. C. and Williams, R. H. 1996. Ballistic electron emission microscopy of InAs grown on GaAs(100). Surface Science 352-4, pp. 861-864. (10.1016/0039-6028(95)01288-5)
Ke, M., Westwood, D., Matthai, C. C., Richardson, B. E. and Williams, R. H. 1996. Hot-electron transport through Au/GaAs and Au/GaAs/AlAs heterojunction interfaces: ballistic-electron-emission-microscopy measurement and Monte Carlo simulation. Physical Review B 53(8), article number: 4845. (10.1103/PhysRevB.53.4845)
Ke, M., Westwood, D., Matthai, C. C., Richardson, B. E. and Williams, R. H. 1996. Ballistic electron emission microscopy of Au-InAs-GaAs system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14(4), pp. 2786-2789. (10.1116/1.588833)
Bass, J. M., Morris, S. J. and Matthai, C. C. 1996. Theoretical reflectance anisotropy spectroscopy and scanning tunnelling microscopy study of the gaas(001) (2 × 4) surface. Materials Science and Engineering: B 37(1-3), pp. 89-92. (10.1016/0921-5107(95)01461-6)
Bass, J. M. and Matthai, C. C. 1996. Ab initio calculations of the reflectance anisotropy spectrum. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14(4), pp. 3075-3079. (10.1116/1.589067)
Anyele, H. T., Shen, T. and Matthai, C. C. 1996. The linear optical response of reconstructed Sn/Si(111) surfaces. Journal of Physics: Condensed Matter 8(23), pp. 4139-4144. (10.1088/0953-8984/8/23/006)
Anyele, H. T. and Matthai, C. C. 1996. Calculation of the electronic structure and the linear optical response of the Sb- and Sn-Si(111) √3 x √3 surfaces. Journal of Physics: Condensed Matter 8(36), pp. 6585-6596. (10.1088/0953-8984/8/36/011)
Bass, J. M., Matthai, C. C. and Saynor, K. A. 1996. A Theoretical study of the STM images of the GaAs (001) reconstructed. Presented at: 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 15-19 August 1994 Presented at Lockwood, D. J. ed.22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994 (Proceedings). University of British Columbia: Vancouver: World Scientific
Steimetz, E. et al. 1996. In-Situ Control of InAs Quantum Dot Evolution in MBE, MOVPE and MOMBE. Presented at: 23rd International conference on the physics of semiconductors., Berliin, Germany, 21-26 July 1996 Presented at Lockwoood, D. J., Scheffler, M. and Zimmermann, R. eds.23rd International Conference on the Physics of Semiconductors: Berlin, Germany, July 21-26, 1996 (Proceedings). Vol. 3800. World Scientific pp. 1297 -1300.

1995

Morris, S., Bass, J. and Matthai, C. C. 1995. Reflectance anisotropy of the GaAs(001) (2×4) surface: Ab initio calculations. Physical Review B 52(23), pp. 16739-16743. (10.1103/PhysRevB.52.16739)
Matthai, C. C., Gavartin, J. L. and Cafolla, A. A. 1995. Structural and elastic properties of porous silicon. Thin Solid Films 255(1-2), pp. 174-176. (10.1016/0040-6090(94)05648-W)
Matthai, C. C., Bass, J. M., Jackson, M. D., Thornton, J. M. C. and Weightman, P. 1995. A comparison of observed and simulated scanning tunneling images of the reconstructed GaAs(001) surface. Materials Science and Engineering: B 35(1-3), pp. 489-492. (10.1016/0921-5107(95)01348-2)
Ke, M. et al. 1995. Ballistic electron emission microscopy of strained and relaxed In0.35Ga0.65As/AlAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13(4), pp. 1684. (10.1116/1.587878)
Ke, M., Westwood, D., Matthai, C. C. and Richardson, B. E. 1995. Ballistic elecron emission microscopy of InAs/Ga1-xA1xAs relaxed heterostructure interfaces. Materials Science and Engineering: B 35(1-3), pp. 349-352. (10.1016/0921-5107(95)01392-X)
Gavartin, J. L., Matthai, C. C. and Morrison, I. 1995. The influence of the spatial structure on the electronic properties of porous silicon: quantum chemical study. Thin Solid Films 255(1-2), pp. 39-42. (10.1016/0040-6090(94)05600-I)
Gavartin, J. L. and Matthai, C. C. 1995. The electronic structure and luminescence properties of porous silicon and silicon nanoclusters. Materials Science and Engineering: B 35(1-3), pp. 459-462. (10.1016/0921-5107(95)01405-5)
Bass, J. M. and Matthai, C. C. 1995. Scanning-tunneling-microscopy and spectroscopy simulation of the GaAs(110) surface. Physical Review B 52(7), pp. 4712-4715. (10.1103/PhysRevB.52.4712)
Spaltmann, D., Morris, S. J., Matthai, C. C. and Williams, R. 1995. Reflectance anisotropy and Raman scattering spectroscopy studies of ZnSe grown on GaAs(001). Journal of Physics D: Applied Physics 28(12), article number: 2574. (10.1088/0022-3727/28/12/027)
Saynor, K. A., Bass, J. M. and Matthai, C. C. 1995. Modification of the Band offsets at the GaAs/AlAs interface. Presented at: 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, 15-19 August 1994 Presented at Lockwood, D. J. ed.22nd International Conference on the Physics of Semiconductors: Vancouver, Canada, August 15-19, 1994 (Proceedings), Vol. 1. University of British Columbia : Vancouver: World Scientific

1994

Morris, S. J., Bass, J. M., Matthai, C. C., Milman, V. and Payne, M. C. 1994. Reflectance anisotropy of reconstructed GaAs(001) surfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 12(4), pp. 2684-2688. (10.1116/1.587231)
Matthai, C. C. 1994. Bonding and dipoles at semiconductor interfaces. Philosophical Magazine Part B 69(5), pp. 941-944. (10.1080/01418639408240162)
Bass, J. M. and Matthai, C. C. 1994. Theoretical simulation of scanning-tunneling-microscopy images of the GaAs(001)β(2×4) and β(4×2) surfaces. Physical Review B 50(15), pp. 11212-11215. (10.1103/PhysRevB.50.11212)
Morris, S. J. and Matthai, C. C. 1994. Reflectance anisotropy of reconstructed semiconductor surfaces. Presented at: Formation of semiconductor interfaces : 4th International Conference( ICFSI- 4 ), Jülich, Germany, 14-18 June 1993 Presented at Lengeler, B. et al. eds.Formation of semiconductor interfaces: proceedings of the 4th International Conference on the Formation of Semiconductor Interfaces, Forschungszentrum Julich, 14-18 June 1993. Singapore; New Jersey: World Scientific
Saynor, K. A., Bass, J. M., Matthai, C. C., Payne, M. C. and Milman, V. 1994. A theoretical study of Band Offset modification at the GaAs/AlAs interface employing Si interlayers. Presented at: Formation of semiconductor interfaces : 4th International Conference (ICFSI -4), Jülich, Germany, 14-18 June 1993 Presented at Lengeler, B. et al. eds.Formation of semiconductor interfaces : proceedings of the 4th International Conference, Forschungszentrum Jülich, 14-18 June 1993. Singapore, River Edge, NJ: World Scientific
Morris, S. J. et al. 1994. Reflectance anisotrophy of the GaAs(001) surface. Surface Review and Letters 1(4), pp. 481-484. (10.1142/S0218625X94000485)

1993

Whittle, R., McGovern, I. T., Hughes, A., Shen, T. -. and Matthai, C. C. 1993. A theoretical study of the electronic structure of clean GaP(110) and Sb on GaP(110) surfaces. Journal of Physics: Condensed Matter 5(36), pp. 6555-6562. (10.1088/0953-8984/5/36/010)
Shen, T. and Matthai, C. C. 1993. Calculation of the optical properties of As molecules on Si substrates. Surface Science 287-28, pp. 672-675. (10.1016/0039-6028(93)91051-P)
Matthai, C. C., Srivastava, G. P. and Palmer, D. W. 1993. Control of electrical barriers at semiconductor heterojunctions by interface doping [and discussion]. Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 344(1673), pp. 579-586. (10.1098/rsta.1993.0110)
Griffiths, C. L., Anyele, H. T., Matthai, C. C., Cafolla, A. A. and Williams, R. H. 1993. Effect of surface reconstruction on Fermi-level pinning in the Sn on Si(111) system. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 11(4), pp. 1559-1563. (10.1116/1.586969)
Bass, J. M., Matthai, C. C., Milman, V. and Payne, M. 1993. Electronic structure of the Si6/Ge6(111) superlattice strained to a Ge substrate. Semiconductor Science and Technology 8(12), pp. 2121-2124. (10.1088/0268-1242/8/12/015)
Anyele, H. T., Cafolla, A. A. and Matthai, C. C. 1993. A study of the electronic structure and Schottky barriers at reconstructed Sn/Si interfaces. Applied Surface Science 70-71(2), pp. 433-437. (10.1016/0169-4332(93)90555-P)

1992

Shen, T. and Matthai, C. C. 1992. The effect of germanium bilayers on the band offsets at the InAs--GaAs interface. Applied Surface Science 56-58(Part 2), pp. 746-748. (10.1016/0169-4332(92)90331-Q)
Matthai, C. C., Rees, N. V. and Shen, T. H. 1992. Schottky barriers and interface structure at silicide-silicon interfaces. Applied Surface Science 56-58(Part 1), pp. 525-530. (10.1016/0169-4332(92)90282-3)
Baker, D. L., Matthai, C. C. and Stephens, N. M. 1992. Modelling viscous fingering on a parallel computer. Molecular Simulation 9(1), pp. 41-47. (10.1080/08927029208048260)
Ashu, P. and Matthai, C. C. 1992. Molecular dynamics simulation of germanium on silicon (001) substrates. Applied Surface Science 56-58(Part 2), pp. 661-664. (10.1016/0169-4332(92)90318-R)
Matthai, C. C., Shen, T. H. and Oloumi, M. 1992. Band Offsets in Strained Layer Superlattices. Presented at: the Fifteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XV), Phoenix, AZ, 13-18 Oct 1991 Presented at Katz, A., Buckley, N. and Swaminathan, V. eds.Proceedings of the Fifteenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XV). Proceedings (Electrochemical Society) Pennington, NJ: Electrochemical Society pp. 134.
Shen, T. and Matthai, C. C. 1992. A theoretical study of band offset modification at the InAs/GaAs interface. Presented at: 1992 MRS Spring Meeting & Exhibit. Symposium D – Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity and the Photorefractive Effect, San Francisco, CA, 29 April - 1 May 1992 Presented at Nolte, D. D., Haegel, N. M. and Goossen, K. W. eds.Photo-Induced Space Charge Effects in Semiconductors: Electro-Optics, Photoconductivity, and the Photorefractive Effect : Symposium Held April 29-May (MRS Symposium proceedings), Vol. 261. MRS Symposium proceedings Pittsburgh: Cambridge University Press, (10.1557/PROC-261-81)

1991

Shen, T. -. and Matthai, C. C. 1991. Pressure dependence of the Schottky barrier height at the nickel-silicide/silicon interface. Journal of Physics: Condensed Matter 3(5), pp. 613-615. (10.1088/0953-8984/3/5/010)
Shen, T. -. and Matthai, C. C. 1991. The electronic structure of Si(100) and As/Si(100) surfaces. Journal of Physics: Condensed Matter 3(32), pp. 6169-6172. (10.1088/0953-8984/3/32/022)
Oloumi, M. and Matthai, C. C. 1991. Electronic structure of InGaAs and band offsets in InGaAs/GaAs superlattices. Journal of Physics: Condensed Matter 3(50), pp. 9981-9987. (10.1088/0953-8984/3/50/004)
Bass, J. M. and Matthai, C. C. 1991. The effect of metal layers on the band offsets at the silicon-germanium interface. Semiconductor Science and Technology 6(1), pp. 69-70. (10.1088/0268-1242/6/1/014)
Bass, J. M. and Matthai, C. C. 1991. Electronic structure of the Si6/(Si0.5Ge0.5)6 001 superlattices. Semiconductor Science and Technology 6(2), pp. 109-111. (10.1088/0268-1242/6/2/007)
Ashu, P., Matthai, C. C. and Shen, T. -. 1991. Dynamics of atoms on silicon substrates. Surface Science 251-2, pp. 955-959. (10.1016/0039-6028(91)91132-H)
Ashu, P. and Matthai, C. C. 1991. A molecular dynamics study of the critical thickness of Ge layers on Si substrates. Applied Surface Science 48-49, pp. 39-43. (10.1016/0169-4332(91)90304-3)

1990

Bass, J. . M. and Matthai, C. C. 1990. Electronic structure of (111)Si/Ge superlattices. Journal of Physics: Condensed Matter 2(38), pp. 7841-7846. (10.1088/0953-8984/2/38/009)
Oloumi, M. and Matthai, C. C. 1990. Electronic structure and band discontinuities in the InAs/GaAs system. Journal of Physics: Condensed Matter 2(23), pp. 5153-5160. (10.1088/0953-8984/2/23/005)
Bass, J. M. and Matthai, C. C. 1990. A strain dependent study of the (001) Si6Ge6 superlattice. Semiconductor Science and Technology 5(7), pp. 707-709. (10.1088/0268-1242/5/7/012)
Oloumi, M. and Matthai, C. C. 1990. Study of the electronic structure and band offsets of the GaSb/InAs system. Semiconductor Science and Technology 5(9), article number: 947. (10.1088/0268-1242/5/9/004)
Matthai, C. C., Bass, J. M. and Oloumi, M. 1990. Band offsets and electron localization in semiconductor interfaces and superlattices. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 8(4), article number: 916. (10.1116/1.584942)
Matthai, C. C. and Ashu, P. 1990. Computer simulation of metal-semiconductor and semiconductor-semiconductor interfaces. Le Journal de Physique Colloques 51(C1), pp. C1- 873. (10.1051/jphyscol:19901137)

1989

Rees, N. V. and Matthai, C. C. 1989. The Schottky barrier height at the NiSi2-Si(111) interface. Semiconductor Science and Technology 4(5), pp. 412-415. (10.1088/0268-1242/4/5/014)
Bass, J. . M., Oloumi, M. and Matthai, C. C. 1989. A method for determining band offsets in semiconductor superlattices and interfaces. Journal of Physics: Condensed Matter 1(51), pp. 10625-10628. (10.1088/0953-8984/1/51/032)
Ashu, P. and Matthai, C. C. 1989. Computer simulation of Si and Ge adatoms and thin layers on Si substrates. Journal of Physics: Condensed Matter 1(Supp B), pp. SB17-SB20. (10.1088/0953-8984/1/SB/004)
Oloumi, M. and Matthai, C. C. 1989. Band offset at InAs/GaAs interfaces. Journal of Physics: Condensed Matter 1(SB), pp. SB211-SB212. (10.1088/0953-8984/1/SB/046)
Matthai, C. C. 1989. Molecular dynamics simulation of transition metals as silicon substrates. Molecular Simulation 3(1-3), pp. 101-114. (10.1080/08927028908034621)

1988

Rees, N. V. and Matthai, C. C. 1988. The Schottky barrier height at the CoSi2/Si(111) interface. Journal of Physics C: Solid State Physics 21(27), pp. L981-L984. (10.1088/0022-3719/21/27/002)
Rees, N. V. and Matthai, C. C. 1988. Electronic-structure of v-si interfaces. Vacuum 38(4-5), pp. 430. (10.1016/0042-207X(88)90116-9)

1985

Matthai, C. C. and Bacon, D. J. 1985. The collapse of vacancy clusters: a molecular dynamics study. Journal of Nuclear Materials 135(2-3), pp. 173-180. (10.1016/0022-3115(85)90075-3)

1984

Matthai, C. C. and Bacon, D. J. 1984. On the unfaulting of vacancy loops in BCC metals. Journal of Nuclear Materials 125(2), pp. 138-151. (10.1016/0022-3115(84)90541-5)

1983

Matthai, C. C. and Bacon, D. 1983. Vacancy formation and migration energies in strained crystals. Journal of Nuclear Materials 114(1), pp. 22-29. (10.1016/0022-3115(83)90068-5)

1982

Matthai, C. C. and March, N. H. 1982. Small angle scattering from liquids: Van der Waals forces in argon and collective mode in Na. Physics and Chemistry of Liquids 11(3), pp. 207-217. (10.1080/00319108208080743)

1981

Matthai, C. C., Grout, P. J. and March, N. H. 1981. Interatomic forces in the b.c.c. transition metals. Journal of Physics and Chemistry of Solids 42(4), pp. 317-322. (10.1016/0022-3697(81)90147-5)
Matthai, C. C. 1981. The interatomic potential and the long-range S(k) in liquids. Philosophical Magazine Part B 43(5), pp. 925-930. (10.1080/01418638108222357)

1980

Matthai, C. C., Grout, P. J. and March, N. H. 1980. Study of X-ray scattering in Be using Wannier functions. Journal of Physics F: Metal Physics 10(7), pp. 1621. (10.1088/0305-4608/10/7/028)

1978

Matthai, C. C., Grout, P. J. and March, N. H. 1978. Bonding, superlattices and diffraction from chrystals. Physics letters. A. 68(3-4), pp. 351-354. (10.1016/0375-9601(78)90529-7)

My teaching duties include:
Lectures:
PX1121 - Mechanics and Matter
PX3141 - Atomic and Nuclear Physics
Tutorials for 1st and 2nd year students
Project supervison (3rd and 4th year).

Research interests

My current research is focussed on non-linear dynamical systems, modelling bio-polymers and phase transitions in condensed matter.Before that I had worked on electronic structure calculations of semiconductor surfaces and interfaces; atomic modelling of surface diffusion and growth; simulation of Reflection Anisotropy Spectra and Scanning Tunnelling Microscope images.