Dr Arathy Varghese
Research Associate
- varghesea@cardiff.ac.uk
- +44 29 2087 0292
- Adeiladau'r Frenhines-Adeilad Canolog, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA
Cyhoeddiadau
2022
- Kumar, A., Varghese, A., Sharma, A., Prasad, M., Janyani, V., Yadav, R. and Elgaid, K. 2022. Recent development and futuristic applications of MEMS based piezoelectric microphones. Sensors and Actuators A: Physical 347, article number: 113887. (10.1016/j.sna.2022.113887)
- Angamuthu, R., ChettiaGoundar Sengodan, B., Anandan, M., Varghese, A. and Vakkalakula, B. S. 2022. LG 55 nm T-gate InGaN/GaN channel based high electron mobility transistors for stable transconductance operation. International Journal of RF and Microwave Computer-Aided Engineering 32(10), article number: e23308. (10.1002/mmce.23308)
- Ghosh, S., Rajan, L. and Varghese, A. 2022. Junctionfree gate stacked vertical TFET hydrogen sensor at room temperature. IEEE Transactions on Nanotechnology 21, pp. 655-662. (10.1109/TNANO.2022.3217652)
- Varghese, A., Eblabla, A., Wu, Z., Ghozati, S. U. and Elgaid, K. 2022. GaN-HEMT on Si as a robust visible-blind UV detector with high responsivity. IEEE Sensors Journal 22(12), pp. 12307-12313. (10.1109/JSEN.2022.3170653)
- Kumar, A., Varghese, A. and Janyani, V. 2022. Fabrication of graphene-ZnO heterostructure-based flexible and thin platform-based UV detector. Journal of Materials Science: Materials in Electronics 33, pp. 3880-3890. (10.1007/s10854-021-07578-8)
- Murugapandiyan, P., Nirmal, D., Ajayan, J., Varghese, A. and Ramkumar, N. 2022. Investigation of influence of SiN and SiO2 passivation in gate field plate double heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N high electron mobility transistors. Silicon 14(4), pp. 1421–1429. (10.1007/s12633-020-00899-z)
2021
- Murugapandiyan, P., Nirmal, D., Tanvir Hasan, M., Varghese, A., Ajayan, J., Augustine Fletcher, A. and Ramkumar, N. 2021. Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study. Materials Science and Engineering: B 273, article number: 115449. (10.1016/j.mseb.2021.115449)
- Varghese, A., Eblabla, A. and Elgaid, K. 2021. Modeling and simulation of ultrahigh sensitive AlGaN/AlN/GaN HEMT based hydrogen gas detector with low detection limit. IEEE Sensors Journal 21(13), pp. 15361-15368. (10.1109/JSEN.2021.3072476)
- Varghese, A., Das, P. and Tallur, S. 2021. A complete analytical model for MOS-HEMT biosensors: capturing the effect of stern layer and charge screening on sensor performance. IEEE Sensors Letters 5(4), article number: 2000504. (10.1109/LSENS.2021.3065509)