Ewch i’r prif gynnwys

Ezekiel Anyebe

Yr Ysgol Peirianneg

Email
anyebee@cardiff.ac.uk
Campuses
Room C/3.07, Adeiladau'r Frenhines-Adeilad Canolog, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA

Trosolwg

My research expertise is in the epitaxial growth and characterisation of III-V compound semiconductor Nanowires for the fabrication of novel optoelectronic devices including mid wavelength infrared (MWIR) photodetectors. I am well-experienced in the self-catalysed growth of InAs and InAsSb Nanowires on Silicon and flexible Graphite substrates.

I use the state of the art Molecular Beam Epitaxy (MBE) system for the heteroepitaxial growth of low-dimensional compound semiconductors with monolayer precision.

Bywgraffiad

I am a Postdoctoral research Associate at the School of Engineering. I joined Cardiff University in 2020, working with Dr Manoj, Kesaria and Prof. Diana Huffaker. I completed my Ph.D. Physics (Quantum Nanotechnology) on “Growth of narrow band gap semiconductor Nanowires on silicon and graphitic substrates by droplet epitaxy” from Lancaster University, UK under the supervision of Dr Qiandong Zhuang and Prof. Tony Krier.

Cyhoeddiadau

2021

2020

2019

2018

2017

2015

2014

2013

My research interest includes:

  • Narrow gap, III-V semiconductors Nanostructure including Nanowires for optoelectronic application in mid-infrared photodetectors.
  • Physics of optoelectronic devices of novel materials and compound semiconductors
  • Molecular beam Epitaxy growth of III-As and III-Sb compound Semiconductors
  • Heteroepitaxial growth of III-V Semiconductor Nanowires on 2D materials such as Graphene
  • Mechanism of III-V-Sb Nanowires growth
  • Type-II superlattices (T2SL) for mid-infrared photodetectors.