Ezekiel Anyebe
- anyebee@cardiff.ac.uk
- Room C/3.07, Adeiladau'r Frenhines-Adeilad Canolog, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA
Trosolwg
My research expertise is in the epitaxial growth and characterisation of III-V compound semiconductor Nanowires for the fabrication of novel optoelectronic devices including mid wavelength infrared (MWIR) photodetectors. I am well-experienced in the self-catalysed growth of InAs and InAsSb Nanowires on Silicon and flexible Graphite substrates.
I use the state of the art Molecular Beam Epitaxy (MBE) system for the heteroepitaxial growth of low-dimensional compound semiconductors with monolayer precision.
Bywgraffiad
I am a Postdoctoral research Associate at the School of Engineering. I joined Cardiff University in 2020, working with Dr Manoj, Kesaria and Prof. Diana Huffaker. I completed my Ph.D. Physics (Quantum Nanotechnology) on “Growth of narrow band gap semiconductor Nanowires on silicon and graphitic substrates by droplet epitaxy” from Lancaster University, UK under the supervision of Dr Qiandong Zhuang and Prof. Tony Krier.
Cyhoeddiadau
2022
- Alshahrani, D. O., Kesaria, M., Anyebe, E. A., Srivastava, V. and Huffaker, D. L. 2022. Emerging type-II superlattices of InAs/InAsSb and InAs/GaSb for mid-wavelength infrared photodetectors. Advanced Photonics Research 3(2), article number: 2100094. (10.1002/adpr.202100094)
2021
- Kwan, D., Kesaria, M., Anyebe, E. and Huffaker, D. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
- Kesaria, M., Alshahrani, D., Kwan, D., Anyebe, E. and Srivastava, V. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
- Kwan, D. C. M., Kesaria, M., Anyebe, E. A., Alshahrani, D. O., Delmas, M., Liang, B. L. and Huffaker, D. L. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
- Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)
2020
- Anyebe, E. 2020. Recent progress on the gold-free integration of Ternary III−as antimonide nanowires directly on Silicon. Nanomaterials 10(10), article number: 2064. (10.3390/nano10102064)
- Anyebe, E. A., Kesaria, M., Sanchez, A. M. and Zhuang, Q. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)
2019
- Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)
2018
- Li, H. et al. 2018. Novel type-II InAs/AlSb core-shell nanowires and their enhanced negative photocurrent for efficient photodetection. Advanced Functional Materials 28(8), article number: 1705382. (10.1002/adfm.201705382)
2017
- Anyebe, E. A. 2017. Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon. Applied Nanoscience 7(7), pp. 365-370. (10.1007/s13204-017-0585-8)
- Anyebe, E. A. et al. 2017. Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports 7, article number: 46110. (10.1038/srep46110)
2015
- Anyebe, E. A. et al. 2015. Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite. Nano Letters 15(7), pp. 4348-4355. (10.1021/acs.nanolett.5b00411)
- Anyebe, E. A., Rajpalke, M. K., Veal, T. D., Jin, C. J., Wang, Z. M. and Zhuang, Q. D. 2015. Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires. Nano Research 8(4), pp. 1309-1319. (10.1007/s12274-014-0621-x)
- Zhuang, Q. D. et al. 2015. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters 15(2), pp. 1109-1116. (10.1021/nl5040946)
2014
- Anyebe, E. A. and Zhuang, Q. 2014. Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates. Materials Research Bulletin 60, pp. 572-575. (10.1016/j.materresbull.2014.09.028)
- Anyebe, E. A. et al. 2014. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters 8(7), pp. 658-662. (10.1002/pssr.201409106)
- Zhuang, Q. D. et al. 2014. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters 9(1), article number: 321. (10.1186/1556-276X-9-321)
- Anyebe, E. A., Zhuang, Q., Kesaria, M. and Krier, A. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)
2013
- Anyebe, E. A. and Zhuang, Q. 2013. Heteroepitaxial growth of free?standing InAs nanowires on graphite for flexible devices. Presented at: 22nd European Workshop on Heterostructure Technology (HETECH), University of Glasgow, Scotland, 9 - 11 September 2013.
My research interest includes:
- Narrow gap, III-V semiconductors Nanostructure including Nanowires for optoelectronic application in mid-infrared photodetectors.
- Physics of optoelectronic devices of novel materials and compound semiconductors
- Molecular beam Epitaxy growth of III-As and III-Sb compound Semiconductors
- Heteroepitaxial growth of III-V Semiconductor Nanowires on 2D materials such as Graphene
- Mechanism of III-V-Sb Nanowires growth
- Type-II superlattices (T2SL) for mid-infrared photodetectors.