Ezekiel Anyebe

2021

• Kwan, D.et al. 2021. Recent trends in 8-14 µm type-II superlattice infrared detectors. Infrared Physics and Technology 116, article number: 103756. (10.1016/j.infrared.2021.103756)
• Kesaria, M.et al. 2021. Optical and electrical performance of 5 µm InAs/GaSb Type-II superlattice for NOx sensing application. Materials Research Bulletin 142, article number: 111424. (10.1016/j.materresbull.2021.111424)
• Kwan, D. C. M.et al. 2021. Optical and structural investigation of a 10 μm InAs/GaSb type-II superlattice on GaAs. Applied Physics Letters 118(20), article number: 203102. (10.1063/5.0045703)
• Anyebe, E. A. and Kesaria, M. 2021. Recent advances in the Van der Waals epitaxy growth of III‐V semiconductor nanowires on graphene. Nano Select 2(4), pp. 688-711. (10.1002/nano.202000142)

2020

• Anyebe, E. 2020. Recent progress on the gold-free integration of Ternary III−as antimonide nanowires directly on Silicon. Nanomaterials 10(10), article number: 2064. (10.3390/nano10102064)
• Anyebe, E. A.et al. 2020. A comparative study of graphite and silicon as suitable substrates for the self-catalysed growth of InAs nanowires by MBE. Applied Physics A: Materials Science and Processing 126(6), article number: 427. (10.1007/s00339-020-03609-z)

2019

• Anyebe, E. A. and Kesaria, M. 2019. Photoluminescence characteristics of zinc blende InAs nanowires. Scientific Reports 9, article number: 17665. (10.1038/s41598-019-54047-8)

2018

• Li, H.et al. 2018. Novel type-II InAs/AlSb core-shell nanowires and their enhanced negative photocurrent for efficient photodetection. Advanced Functional Materials 28(8), article number: 1705382. (10.1002/adfm.201705382)

2017

• Anyebe, E. A. 2017. Influence of growth parameters on In-droplet-assisted growth of InAs nanowires on silicon. Applied Nanoscience 7(7), pp. 365-370. (10.1007/s13204-017-0585-8)
• Anyebe, E. A.et al. 2017. Optimization of self-catalyzed InAs nanowires on flexible graphite for photovoltaic infrared photodetectors. Scientific Reports 7, article number: 46110. (10.1038/srep46110)

2015

• Anyebe, E. A.et al. 2015. Realization of vertically aligned, ultrahigh aspect ratio InAsSb nanowires on graphite. Nano Letters 15(7), pp. 4348-4355. (10.1021/acs.nanolett.5b00411)
• Anyebe, E. A.et al. 2015. Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires. Nano Research 8(4), pp. 1309-1319. (10.1007/s12274-014-0621-x)
• Zhuang, Q. D.et al. 2015. Sb-induced phase control of InAsSb nanowires grown by molecular beam epitaxy. Nano Letters 15(2), pp. 1109-1116. (10.1021/nl5040946)

2014

• Anyebe, E. A. and Zhuang, Q. 2014. Self-catalysed InAs 1-x Sb x nanowires grown directly on bare Si substrates. Materials Research Bulletin 60, pp. 572-575. (10.1016/j.materresbull.2014.09.028)
• Anyebe, E. A.et al. 2014. Self-catalysed growth of InAs nanowires on bare Si substrates by droplet epitaxy. physica status solidi (RRL) - Rapid Research Letters 8(7), pp. 658-662. (10.1002/pssr.201409106)
• Zhuang, Q. D.et al. 2014. Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy. Nanoscale Research Letters 9(1), article number: 321. (10.1186/1556-276X-9-321)
• Anyebe, E. A.et al. 2014. The structural evolution of InN nanorods to microstructures on Si (111) by molecular beam epitaxy. Semiconductor Science and Technology 29(8), article number: 85010. (10.1088/0268-1242/29/8/085010)

2013

• Anyebe, E. A. and Zhuang, Q. 2013. Heteroepitaxial growth of free?standing InAs nanowires on graphite for flexible devices. Presented at: 22nd European Workshop on Heterostructure Technology (HETECH), University of Glasgow, Scotland, 9 - 11 September 2013.