Ewch i’r prif gynnwys
Dr Manoj Kesaria

Dr Manoj Kesaria

Advanced Materials and Devices - Sêr Cymru Research Group
Condensed Matter and Photonics Group

Ysgol Ffiseg a Seryddiaeth

Room C/3.07, Adeiladau'r Frenhines-Adeilad Canolog, 5 The Parade, Ffordd Casnewydd, Caerdydd, CF24 3AA

My research focus is on the epitaxial growth and characterisation of group III-Nitrides and III-As/Sb thin films and opto-electronic devices using a state of art dual system Veeco Gen 930 Molecular Beam Epitaxy (MBE) system.  I use MBE to probe nucleation and growth of ultra-thin films, thin films, quantum well (QW), quantum dots (QD), nanostructures (nanowires) etc with sub-monolayer and monolayer precision. I utilize these to realise opto-electronic devices such as light emitting diodes, photodiodes and thermos-photovoltaics of III-V semiconductors.

I manage epitaxy laboratory (E/0.19/B) which host a unique dual chamber MBE reactor with III- As/Sb and Nitride growth capability up to 3inch wafer, with an in-situ reflection high energy electron diffraction (RHEED) for the real-time crystal structure monitoring of surface. A high-resolution x-ray diffraction (HRXRD) system for an 8 inch wafer scale structural characterisation.

From July 2018 onward I am working as Lecturer in the Physics and Astronomy department of Cardiff University

Research interests and ongoing research: III-Nitride and III-As/Sb type-II superlattices (T2SL), qunatum wells (QW) and nanostructures (nanowires), quantum dots (QD) for optoelectronic devices (Light Emitting Diodes, Photodiode, thermophotovoltaics etc.)

Prior joining to Cardiff

From 2013-2018: I have worked as senior researcher with Prof. Anthony Krier (Lancaster University), Prof. Chee Hing Tan (University of Sheffield) and Prof. Amalia Patane (University of Nottingham).

Fabrication and electrical characterization of InAs, InGaAs, InGaAsBi, and Sb based photodiodes for EPSRC project (EP/N020715/1) “Realising a solid state photomultiplier and infrared detectors through bismide containing semiconductors”.

MBE Growth and characterisation of InAs (Al/Ga/Sb) based materials and device. Researched on the development of InAsSbN materials for devices and narrow gap materials for thermophotovoltaic (TPV). InN nanowires, InAsN and InGaAsN MQW on metamorphic buffer layer, InAsSbN/InAs Photodiode and InAs/InAsSb type-II superlattice LED. For EPSRC project (EP/J015849/1) “InAsNSb Dilute Nitride Materials for Mid-infrared Devices & Applications” and (EP/M013707/1) “TPVs for Waste Heat Recovery in Energy Resilient Manufacturing”.

From 2006-2013: I have worked as research scientist at University of Houstion, Texas, Junior/Senior research fellow at Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore and National Physical Laboratory, New Delhi.

At Houston: MBE growth (custom built III-Nitride system) of high In containing InGaN, GaN and InN thin-film and device structure grown in custom built MBE reactor for Avalanche Photo-Diode (APD). Effect of nitrogen plasma study on the growth of GaN, InN and InGaN nanowires and II-VI lattice matched buffer development for high In InGaN APDs.

At Bangalore (Ph.D research): MBE growth and characterisation of GaN based thin-films and nanostructures using SVTA Inc. Plasma Assisted Molecular Beam Epitaxy (PA-MBE) equipped with Reflection High Energy Electron Diffraction (RHEED), Quartz Crystal Monitor (QCM), Ellipsometery and Atomic Absorption Spectroscopy and Cathodoluminesce. And in-situhetero-epitaxial adsorption and desorption study of metals on a low and high index Silicon reconstructed surface using ultra-high vacuum (UHV) system with X-ray Photoelectron Spectroscopy (XPS) and RHK- Scanning Tunnelling Electron Microscopy (STM).

At Delhi (Ph.D research): In-situ hetero-epitaxial adsorption and desorption study of metals on a low and high index Silicon reconstructed surface using ultra-high vacuum (UHV) system with low energy electron diffraction (LEED), Auger Electron Spectroscopy (AES) and Electron Energy Loss Spectroscopy (EELS).